Dynamics of charge states and a flux of relativistic U73+ ions in a silicon crystal

O. E. Krivosheev, Yu L. Pivovarov, Yu M. Filimonov

    Research output: Contribution to journalArticle

    Abstract

    A model that adequately describes the dynamics of charge states of ions, the processes of electron loss or capture, trajectories and losses of energy is proposed. It involves the construction of ion trajectories in a complex field of continuous potential of many atomic chains with allowance for thermal scattering from crystal nuclei and channeling electrons. The model, however, has a shortcoming. It cannot provide reliable data for U ions charged from approximately 83 to approximately 88, since the charge fraction formation proceeds by two quite different mechanisms.

    Original languageEnglish
    Pages (from-to)586-589
    Number of pages4
    JournalPhysics, chemistry and mechanics of surfaces
    Volume11
    Issue number5
    Publication statusPublished - 1995

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    Fluxes
    Silicon
    Crystals
    Ions
    Trajectories
    Electrons
    Scattering
    Hot Temperature

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Dynamics of charge states and a flux of relativistic U73+ ions in a silicon crystal. / Krivosheev, O. E.; Pivovarov, Yu L.; Filimonov, Yu M.

    In: Physics, chemistry and mechanics of surfaces, Vol. 11, No. 5, 1995, p. 586-589.

    Research output: Contribution to journalArticle

    Krivosheev, OE, Pivovarov, YL & Filimonov, YM 1995, 'Dynamics of charge states and a flux of relativistic U73+ ions in a silicon crystal', Physics, chemistry and mechanics of surfaces, vol. 11, no. 5, pp. 586-589.
    Krivosheev, O. E. ; Pivovarov, Yu L. ; Filimonov, Yu M. / Dynamics of charge states and a flux of relativistic U73+ ions in a silicon crystal. In: Physics, chemistry and mechanics of surfaces. 1995 ; Vol. 11, No. 5. pp. 586-589.
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