DYNAMICS OF ANNIHILATION OF DEFECTS IN SEMICONDUCTOR CRYSTALS UNDER THE ACTION OF SMALL RADIATION DOSES.

P. A. Cherdantsev, I. P. Chernov, Yu A. Timoshnikov, V. A. Korotchenko, A. P. Mamontov

Research output: Contribution to journalArticle

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Abstract

Measurements were made of the thermal effect during gamma -photon irradiation of semiconductor crystals containing defects. The rise in the temperature of a crystal due to the energy released as a result of defect annihilation was 2. 6 K. This small thermal effect was attributed to the absorption of the annihilation energy by defect clusters.

Original languageEnglish
Pages (from-to)1283-1285
Number of pages3
JournalSoviet physics. Semiconductors
Volume18
Issue number11
Publication statusPublished - Nov 1984

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Dosimetry
Semiconductor materials
Thermal effects
Defects
Crystals
Photons
Irradiation
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Cherdantsev, P. A., Chernov, I. P., Timoshnikov, Y. A., Korotchenko, V. A., & Mamontov, A. P. (1984). DYNAMICS OF ANNIHILATION OF DEFECTS IN SEMICONDUCTOR CRYSTALS UNDER THE ACTION OF SMALL RADIATION DOSES. Soviet physics. Semiconductors, 18(11), 1283-1285.

DYNAMICS OF ANNIHILATION OF DEFECTS IN SEMICONDUCTOR CRYSTALS UNDER THE ACTION OF SMALL RADIATION DOSES. / Cherdantsev, P. A.; Chernov, I. P.; Timoshnikov, Yu A.; Korotchenko, V. A.; Mamontov, A. P.

In: Soviet physics. Semiconductors, Vol. 18, No. 11, 11.1984, p. 1283-1285.

Research output: Contribution to journalArticle

Cherdantsev, PA, Chernov, IP, Timoshnikov, YA, Korotchenko, VA & Mamontov, AP 1984, 'DYNAMICS OF ANNIHILATION OF DEFECTS IN SEMICONDUCTOR CRYSTALS UNDER THE ACTION OF SMALL RADIATION DOSES.', Soviet physics. Semiconductors, vol. 18, no. 11, pp. 1283-1285.
Cherdantsev, P. A. ; Chernov, I. P. ; Timoshnikov, Yu A. ; Korotchenko, V. A. ; Mamontov, A. P. / DYNAMICS OF ANNIHILATION OF DEFECTS IN SEMICONDUCTOR CRYSTALS UNDER THE ACTION OF SMALL RADIATION DOSES. In: Soviet physics. Semiconductors. 1984 ; Vol. 18, No. 11. pp. 1283-1285.
@article{b2bbbd87e8a6448ea44eb49a13f63e2a,
title = "DYNAMICS OF ANNIHILATION OF DEFECTS IN SEMICONDUCTOR CRYSTALS UNDER THE ACTION OF SMALL RADIATION DOSES.",
abstract = "Measurements were made of the thermal effect during gamma -photon irradiation of semiconductor crystals containing defects. The rise in the temperature of a crystal due to the energy released as a result of defect annihilation was 2. 6 K. This small thermal effect was attributed to the absorption of the annihilation energy by defect clusters.",
author = "Cherdantsev, {P. A.} and Chernov, {I. P.} and Timoshnikov, {Yu A.} and Korotchenko, {V. A.} and Mamontov, {A. P.}",
year = "1984",
month = "11",
language = "English",
volume = "18",
pages = "1283--1285",
journal = "Soviet physics. Semiconductors",
issn = "0038-5700",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - DYNAMICS OF ANNIHILATION OF DEFECTS IN SEMICONDUCTOR CRYSTALS UNDER THE ACTION OF SMALL RADIATION DOSES.

AU - Cherdantsev, P. A.

AU - Chernov, I. P.

AU - Timoshnikov, Yu A.

AU - Korotchenko, V. A.

AU - Mamontov, A. P.

PY - 1984/11

Y1 - 1984/11

N2 - Measurements were made of the thermal effect during gamma -photon irradiation of semiconductor crystals containing defects. The rise in the temperature of a crystal due to the energy released as a result of defect annihilation was 2. 6 K. This small thermal effect was attributed to the absorption of the annihilation energy by defect clusters.

AB - Measurements were made of the thermal effect during gamma -photon irradiation of semiconductor crystals containing defects. The rise in the temperature of a crystal due to the energy released as a result of defect annihilation was 2. 6 K. This small thermal effect was attributed to the absorption of the annihilation energy by defect clusters.

UR - http://www.scopus.com/inward/record.url?scp=0021522663&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021522663&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0021522663

VL - 18

SP - 1283

EP - 1285

JO - Soviet physics. Semiconductors

JF - Soviet physics. Semiconductors

SN - 0038-5700

IS - 11

ER -