DYNAMICS OF ANNIHILATION OF DEFECTS IN SEMICONDUCTOR CRYSTALS UNDER THE ACTION OF SMALL RADIATION DOSES.

P. A. Cherdantsev, I. P. Chernov, Yu A. Timoshnikov, V. A. Korotchenko, A. P. Mamontov

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5 Citations (Scopus)

Abstract

Measurements were made of the thermal effect during gamma -photon irradiation of semiconductor crystals containing defects. The rise in the temperature of a crystal due to the energy released as a result of defect annihilation was 2. 6 K. This small thermal effect was attributed to the absorption of the annihilation energy by defect clusters.

Original languageEnglish
Pages (from-to)1283-1285
Number of pages3
JournalSoviet physics. Semiconductors
Volume18
Issue number11
Publication statusPublished - Nov 1984

ASJC Scopus subject areas

  • Engineering(all)

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    Cherdantsev, P. A., Chernov, I. P., Timoshnikov, Y. A., Korotchenko, V. A., & Mamontov, A. P. (1984). DYNAMICS OF ANNIHILATION OF DEFECTS IN SEMICONDUCTOR CRYSTALS UNDER THE ACTION OF SMALL RADIATION DOSES. Soviet physics. Semiconductors, 18(11), 1283-1285.