Abstract
The behaviour of hydrogen implanted in beryllium was investigated based on simulation of the effect of high-temperature plasma and the products of nuclear fusion. The hydrogen depth distribution was measured by the elastic nuclear detection method. The energy of implanted hydrogen ions was 10 keV. the temperature of the samples was either 25 or 400°C, maximum implantation fluence was 1018 cm-2. It is shown that the hydrogen diffusion was closely connected with defect motion produced during irradiation.
| Original language | English |
|---|---|
| Pages (from-to) | 857-859 |
| Number of pages | 3 |
| Journal | Journal of Nuclear Materials |
| Volume | 233-237 |
| Issue number | PART II |
| DOIs | |
| Publication status | Published - 1 Jan 1996 |
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ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Materials Science(all)
Cite this
Dynamics of accumulation of implanted hydrogen in beryllium. / Chernov, I. P.
In: Journal of Nuclear Materials, Vol. 233-237, No. PART II, 01.01.1996, p. 857-859.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Dynamics of accumulation of implanted hydrogen in beryllium
AU - Chernov, I. P.
PY - 1996/1/1
Y1 - 1996/1/1
N2 - The behaviour of hydrogen implanted in beryllium was investigated based on simulation of the effect of high-temperature plasma and the products of nuclear fusion. The hydrogen depth distribution was measured by the elastic nuclear detection method. The energy of implanted hydrogen ions was 10 keV. the temperature of the samples was either 25 or 400°C, maximum implantation fluence was 1018 cm-2. It is shown that the hydrogen diffusion was closely connected with defect motion produced during irradiation.
AB - The behaviour of hydrogen implanted in beryllium was investigated based on simulation of the effect of high-temperature plasma and the products of nuclear fusion. The hydrogen depth distribution was measured by the elastic nuclear detection method. The energy of implanted hydrogen ions was 10 keV. the temperature of the samples was either 25 or 400°C, maximum implantation fluence was 1018 cm-2. It is shown that the hydrogen diffusion was closely connected with defect motion produced during irradiation.
UR - http://www.scopus.com/inward/record.url?scp=21844479291&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=21844479291&partnerID=8YFLogxK
U2 - 10.1016/S0022-3115(96)00057-8
DO - 10.1016/S0022-3115(96)00057-8
M3 - Article
VL - 233-237
SP - 857
EP - 859
JO - Journal of Nuclear Materials
JF - Journal of Nuclear Materials
SN - 0022-3115
IS - PART II
ER -