Distribution of localized states in the forbidden band and a model of electron transitions in ion-irradiated insulators

Abstract

Using ion-irradiated boron nitride as an example, the influence of radiation defects of donor and acceptor type on the spectrum of localized states in the forbidden band is analyzed. Effects of electron transitions, occurring through these localized states, on the optical, dielectric, and photoelectric properties of modified surfaces are investigated.

Original language	English
Pages (from-to)	1277-1283
Number of pages	7
Journal	Physics, chemistry and mechanics of surfaces
Volume	11
Issue number	12
Publication status	Published - 1995

ASJC Scopus subject areas

Engineering(all)

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@article{00ce588fbe504d8dbb1ff07533570ad2,

title = "Distribution of localized states in the forbidden band and a model of electron transitions in ion-irradiated insulators",

abstract = "Using ion-irradiated boron nitride as an example, the influence of radiation defects of donor and acceptor type on the spectrum of localized states in the forbidden band is analyzed. Effects of electron transitions, occurring through these localized states, on the optical, dielectric, and photoelectric properties of modified surfaces are investigated.",

author = "Kabyshev, {A. V.} and Konusov, {F. V.} and Lopatin, {V. V.}",

year = "1995",

language = "English",

volume = "11",

pages = "1277--1283",

journal = "Physics, chemistry and mechanics of surfaces",

issn = "0734-1520",

publisher = "Gordon and Breach Science Publishers",

number = "12",

}

TY - JOUR

T1 - Distribution of localized states in the forbidden band and a model of electron transitions in ion-irradiated insulators

AU - Kabyshev, A. V.

AU - Konusov, F. V.

AU - Lopatin, V. V.

PY - 1995

Y1 - 1995

N2 - Using ion-irradiated boron nitride as an example, the influence of radiation defects of donor and acceptor type on the spectrum of localized states in the forbidden band is analyzed. Effects of electron transitions, occurring through these localized states, on the optical, dielectric, and photoelectric properties of modified surfaces are investigated.

AB - Using ion-irradiated boron nitride as an example, the influence of radiation defects of donor and acceptor type on the spectrum of localized states in the forbidden band is analyzed. Effects of electron transitions, occurring through these localized states, on the optical, dielectric, and photoelectric properties of modified surfaces are investigated.

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M3 - Article

AN - SCOPUS:0029453106

VL - 11

SP - 1277

EP - 1283

JO - Physics, chemistry and mechanics of surfaces

JF - Physics, chemistry and mechanics of surfaces

SN - 0734-1520

IS - 12

ER -