TY - JOUR
T1 - Distribution of localized states in the forbidden band and a model of electron transitions in ion-irradiated insulators
AU - Kabyshev, A. V.
AU - Konusov, F. V.
AU - Lopatin, V. V.
PY - 1995
Y1 - 1995
N2 - Using ion-irradiated boron nitride as an example, the influence of radiation defects of donor and acceptor type on the spectrum of localized states in the forbidden band is analyzed. Effects of electron transitions, occurring through these localized states, on the optical, dielectric, and photoelectric properties of modified surfaces are investigated.
AB - Using ion-irradiated boron nitride as an example, the influence of radiation defects of donor and acceptor type on the spectrum of localized states in the forbidden band is analyzed. Effects of electron transitions, occurring through these localized states, on the optical, dielectric, and photoelectric properties of modified surfaces are investigated.
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M3 - Article
AN - SCOPUS:0029453106
VL - 11
SP - 1277
EP - 1283
JO - Physics, chemistry and mechanics of surfaces
JF - Physics, chemistry and mechanics of surfaces
SN - 0734-1520
IS - 12
ER -