Abstract
Using ion-irradiated boron nitride as an example, the influence of radiation defects of donor and acceptor type on the spectrum of localized states in the forbidden band is analyzed. Effects of electron transitions, occurring through these localized states, on the optical, dielectric, and photoelectric properties of modified surfaces are investigated.
| Original language | English |
|---|---|
| Pages (from-to) | 1277-1283 |
| Number of pages | 7 |
| Journal | Physics, chemistry and mechanics of surfaces |
| Volume | 11 |
| Issue number | 12 |
| Publication status | Published - 1995 |
ASJC Scopus subject areas
- Engineering(all)
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Kabyshev, A. V., Konusov, F. V., & Lopatin, V. V. (1995). Distribution of localized states in the forbidden band and a model of electron transitions in ion-irradiated insulators. Physics, chemistry and mechanics of surfaces, 11(12), 1277-1283.