Distribution of localized states in the forbidden band and a model of electron transitions in ion-irradiated insulators

A. V. Kabyshev, F. V. Konusov, V. V. Lopatin

Research output: Contribution to journalArticle

Abstract

Using ion-irradiated boron nitride as an example, the influence of radiation defects of donor and acceptor type on the spectrum of localized states in the forbidden band is analyzed. Effects of electron transitions, occurring through these localized states, on the optical, dielectric, and photoelectric properties of modified surfaces are investigated.

Original languageEnglish
Pages (from-to)1277-1283
Number of pages7
JournalPhysics, chemistry and mechanics of surfaces
Volume11
Issue number12
Publication statusPublished - 1995

Fingerprint

Boron nitride
Electron transitions
Radiation
Defects
Ions

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Distribution of localized states in the forbidden band and a model of electron transitions in ion-irradiated insulators. / Kabyshev, A. V.; Konusov, F. V.; Lopatin, V. V.

In: Physics, chemistry and mechanics of surfaces, Vol. 11, No. 12, 1995, p. 1277-1283.

Research output: Contribution to journalArticle

@article{00ce588fbe504d8dbb1ff07533570ad2,
title = "Distribution of localized states in the forbidden band and a model of electron transitions in ion-irradiated insulators",
abstract = "Using ion-irradiated boron nitride as an example, the influence of radiation defects of donor and acceptor type on the spectrum of localized states in the forbidden band is analyzed. Effects of electron transitions, occurring through these localized states, on the optical, dielectric, and photoelectric properties of modified surfaces are investigated.",
author = "Kabyshev, {A. V.} and Konusov, {F. V.} and Lopatin, {V. V.}",
year = "1995",
language = "English",
volume = "11",
pages = "1277--1283",
journal = "Physics, chemistry and mechanics of surfaces",
issn = "0734-1520",
publisher = "Gordon and Breach Science Publishers",
number = "12",

}

TY - JOUR

T1 - Distribution of localized states in the forbidden band and a model of electron transitions in ion-irradiated insulators

AU - Kabyshev, A. V.

AU - Konusov, F. V.

AU - Lopatin, V. V.

PY - 1995

Y1 - 1995

N2 - Using ion-irradiated boron nitride as an example, the influence of radiation defects of donor and acceptor type on the spectrum of localized states in the forbidden band is analyzed. Effects of electron transitions, occurring through these localized states, on the optical, dielectric, and photoelectric properties of modified surfaces are investigated.

AB - Using ion-irradiated boron nitride as an example, the influence of radiation defects of donor and acceptor type on the spectrum of localized states in the forbidden band is analyzed. Effects of electron transitions, occurring through these localized states, on the optical, dielectric, and photoelectric properties of modified surfaces are investigated.

UR - http://www.scopus.com/inward/record.url?scp=0029453106&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029453106&partnerID=8YFLogxK

M3 - Article

VL - 11

SP - 1277

EP - 1283

JO - Physics, chemistry and mechanics of surfaces

JF - Physics, chemistry and mechanics of surfaces

SN - 0734-1520

IS - 12

ER -