Distribution of localized states in the forbidden band and a model of electron transitions in ion-irradiated insulators

A. V. Kabyshev, F. V. Konusov, V. V. Lopatin

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Using ion-irradiated boron nitride as an example, the influence of radiation defects of donor and acceptor type on the spectrum of localized states in the forbidden band is analyzed. Effects of electron transitions, occurring through these localized states, on the optical, dielectric, and photoelectric properties of modified surfaces are investigated.

Original languageEnglish
Pages (from-to)1277-1283
Number of pages7
JournalPhysics, chemistry and mechanics of surfaces
Issue number12
Publication statusPublished - 1995


ASJC Scopus subject areas

  • Engineering(all)

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