Abstract
Electro-thermal model of power semiconductor devices are of key importance in order to optimize their thermal design and increase their reliability. The development of such an electro-thermal model for power MOSFET transistors (COOLMOS™) based on the coupling between two computation softwares (Matlab and Cast3M) is described in the paper. The elaborated 2D electro-thermal model is able to predict i) the temperature distribution on chip surface well as in volume, ii) the effect of the temperature on the distribution of the current flowing within the die and iii) the effects of the ageing of the metallization layer on the current density and the temperature. In the paper, the used electrical and thermal models are described as well as the implemented coupling scheme.
| Original language | English |
|---|---|
| Title of host publication | 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012 |
| Pages | 84-89 |
| Number of pages | 6 |
| DOIs | |
| Publication status | Published - 24 May 2012 |
| Externally published | Yes |
| Event | 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012 - Nabeul, Tunisia Duration: 26 Mar 2012 → 28 Mar 2012 |
Publication series
| Name | 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012 |
|---|
Conference
| Conference | 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012 |
|---|---|
| Country | Tunisia |
| City | Nabeul |
| Period | 26.3.12 → 28.3.12 |
Fingerprint
Keywords
- Ageing of power semiconductor devices
- Degradation of the metallization layer
- Electro-thermal model
- Power semiconductor transistors
- Short circuit
ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Automotive Engineering
Cite this
Distributed and coupled electrothermal model of power semiconductor devices. / Belkacem, G.; Labrousse, D.; Lefebvre, S.; Joubert, P. Y.; Kuhne, U.; Fribourg, L.; Soulat, R.; Florentin, E.; Rey, C.
2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012. 2012. p. 84-89 6195253 (2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Distributed and coupled electrothermal model of power semiconductor devices
AU - Belkacem, G.
AU - Labrousse, D.
AU - Lefebvre, S.
AU - Joubert, P. Y.
AU - Kuhne, U.
AU - Fribourg, L.
AU - Soulat, R.
AU - Florentin, E.
AU - Rey, C.
PY - 2012/5/24
Y1 - 2012/5/24
N2 - Electro-thermal model of power semiconductor devices are of key importance in order to optimize their thermal design and increase their reliability. The development of such an electro-thermal model for power MOSFET transistors (COOLMOS™) based on the coupling between two computation softwares (Matlab and Cast3M) is described in the paper. The elaborated 2D electro-thermal model is able to predict i) the temperature distribution on chip surface well as in volume, ii) the effect of the temperature on the distribution of the current flowing within the die and iii) the effects of the ageing of the metallization layer on the current density and the temperature. In the paper, the used electrical and thermal models are described as well as the implemented coupling scheme.
AB - Electro-thermal model of power semiconductor devices are of key importance in order to optimize their thermal design and increase their reliability. The development of such an electro-thermal model for power MOSFET transistors (COOLMOS™) based on the coupling between two computation softwares (Matlab and Cast3M) is described in the paper. The elaborated 2D electro-thermal model is able to predict i) the temperature distribution on chip surface well as in volume, ii) the effect of the temperature on the distribution of the current flowing within the die and iii) the effects of the ageing of the metallization layer on the current density and the temperature. In the paper, the used electrical and thermal models are described as well as the implemented coupling scheme.
KW - Ageing of power semiconductor devices
KW - Degradation of the metallization layer
KW - Electro-thermal model
KW - Power semiconductor transistors
KW - Short circuit
UR - http://www.scopus.com/inward/record.url?scp=84862094270&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84862094270&partnerID=8YFLogxK
U2 - 10.1109/REVET.2012.6195253
DO - 10.1109/REVET.2012.6195253
M3 - Conference contribution
SN - 9781467311687
T3 - 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012
SP - 84
EP - 89
BT - 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012
ER -