Distributed and coupled electrothermal model of power semiconductor devices

G. Belkacem, D. Labrousse, S. Lefebvre, P. Y. Joubert, U. Kuhne, L. Fribourg, R. Soulat, E. Florentin, C. Rey

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electro-thermal model of power semiconductor devices are of key importance in order to optimize their thermal design and increase their reliability. The development of such an electro-thermal model for power MOSFET transistors (COOLMOS™) based on the coupling between two computation softwares (Matlab and Cast3M) is described in the paper. The elaborated 2D electro-thermal model is able to predict i) the temperature distribution on chip surface well as in volume, ii) the effect of the temperature on the distribution of the current flowing within the die and iii) the effects of the ageing of the metallization layer on the current density and the temperature. In the paper, the used electrical and thermal models are described as well as the implemented coupling scheme.

Original languageEnglish
Title of host publication2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012
Pages84-89
Number of pages6
DOIs
Publication statusPublished - 24 May 2012
Externally publishedYes
Event2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012 - Nabeul, Tunisia
Duration: 26 Mar 201228 Mar 2012

Publication series

Name2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012

Conference

Conference2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012
CountryTunisia
CityNabeul
Period26.3.1228.3.12

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Keywords

  • Ageing of power semiconductor devices
  • Degradation of the metallization layer
  • Electro-thermal model
  • Power semiconductor transistors
  • Short circuit

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Automotive Engineering

Cite this

Belkacem, G., Labrousse, D., Lefebvre, S., Joubert, P. Y., Kuhne, U., Fribourg, L., ... Rey, C. (2012). Distributed and coupled electrothermal model of power semiconductor devices. In 2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012 (pp. 84-89). [6195253] (2012 1st International Conference on Renewable Energies and Vehicular Technology, REVET 2012). https://doi.org/10.1109/REVET.2012.6195253