Abstract
We report on the design and fabrication of carbon nanotube (CNT) vias based on a hybrid metal/CNT technology. The CNTs were integrated on a 4 inch Si wafer platform using conventional semiconductor processes. Multiwalled carbon nanotubes were grown vertically aligned on a copper based metal line. Via holes were prepared using a single damascene process. By employing a substratebased selective deactivation of the catalyst, CNT growth was restricted to the vias. Following this process scheme, the impact of post-CNT growth procedures, like chemical mechanical planarization and sample annealing, were investigated and electrically evaluated using conductive atomic force microscopy and current-voltage (I-V) characterization. Probing 440 individual structures, the resistance of two series-connected 5 ìm vias were determined to be (800 ± 60) Ω after chemical mechanical planarization. By obtaining the I-V characteristics of single CNTs within an individual via, we found that the measured resistance is determined by the contact resistance of the CNT-metal interface. Two mechanisms were found to be relevant here. First partial oxidation of the metal interface during processing, and secondly, stress-induced voiding caused by the high temperatures during the CNT growth process. Changes in the integration scheme to reduce the overall CNT via resistance are proposed.
| Original language | English |
|---|---|
| Journal | ECS Journal of Solid State Science and Technology |
| Volume | 1 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1 Dec 2012 |
Fingerprint
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
Cite this
Distinguishing between individual contributions to the via resistance in carbon nanotubes based interconnects. / Fiedler, Holger; Toader, Marius; Hermann, Sascha; Rodriguez, Raul D.; Sheremet, Evgeniya; Rennau, Michael; Schulze, Steffen; Waechtler, Thomas; Hietschold, Michael; Zahn, Dietrich R.T.; Schulz, Stefan E.; Gessnera, Thomas.
In: ECS Journal of Solid State Science and Technology, Vol. 1, No. 6, 01.12.2012.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Distinguishing between individual contributions to the via resistance in carbon nanotubes based interconnects
AU - Fiedler, Holger
AU - Toader, Marius
AU - Hermann, Sascha
AU - Rodriguez, Raul D.
AU - Sheremet, Evgeniya
AU - Rennau, Michael
AU - Schulze, Steffen
AU - Waechtler, Thomas
AU - Hietschold, Michael
AU - Zahn, Dietrich R.T.
AU - Schulz, Stefan E.
AU - Gessnera, Thomas
PY - 2012/12/1
Y1 - 2012/12/1
N2 - We report on the design and fabrication of carbon nanotube (CNT) vias based on a hybrid metal/CNT technology. The CNTs were integrated on a 4 inch Si wafer platform using conventional semiconductor processes. Multiwalled carbon nanotubes were grown vertically aligned on a copper based metal line. Via holes were prepared using a single damascene process. By employing a substratebased selective deactivation of the catalyst, CNT growth was restricted to the vias. Following this process scheme, the impact of post-CNT growth procedures, like chemical mechanical planarization and sample annealing, were investigated and electrically evaluated using conductive atomic force microscopy and current-voltage (I-V) characterization. Probing 440 individual structures, the resistance of two series-connected 5 ìm vias were determined to be (800 ± 60) Ω after chemical mechanical planarization. By obtaining the I-V characteristics of single CNTs within an individual via, we found that the measured resistance is determined by the contact resistance of the CNT-metal interface. Two mechanisms were found to be relevant here. First partial oxidation of the metal interface during processing, and secondly, stress-induced voiding caused by the high temperatures during the CNT growth process. Changes in the integration scheme to reduce the overall CNT via resistance are proposed.
AB - We report on the design and fabrication of carbon nanotube (CNT) vias based on a hybrid metal/CNT technology. The CNTs were integrated on a 4 inch Si wafer platform using conventional semiconductor processes. Multiwalled carbon nanotubes were grown vertically aligned on a copper based metal line. Via holes were prepared using a single damascene process. By employing a substratebased selective deactivation of the catalyst, CNT growth was restricted to the vias. Following this process scheme, the impact of post-CNT growth procedures, like chemical mechanical planarization and sample annealing, were investigated and electrically evaluated using conductive atomic force microscopy and current-voltage (I-V) characterization. Probing 440 individual structures, the resistance of two series-connected 5 ìm vias were determined to be (800 ± 60) Ω after chemical mechanical planarization. By obtaining the I-V characteristics of single CNTs within an individual via, we found that the measured resistance is determined by the contact resistance of the CNT-metal interface. Two mechanisms were found to be relevant here. First partial oxidation of the metal interface during processing, and secondly, stress-induced voiding caused by the high temperatures during the CNT growth process. Changes in the integration scheme to reduce the overall CNT via resistance are proposed.
UR - http://www.scopus.com/inward/record.url?scp=84875197486&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84875197486&partnerID=8YFLogxK
U2 - 10.1149/2.027206jss
DO - 10.1149/2.027206jss
M3 - Article
AN - SCOPUS:84875197486
VL - 1
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
SN - 2162-8769
IS - 6
ER -