Dispersion of electrical characteristics and short-circuit robustness of 600V E-mode GaN transistors

Matthieu Landel, Stéphane Lefebvre, Denis Labrousse, Cyrille Gautier, Fadi Zaki, Zoubir Khatir

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

This paper presents an experimental study of the robustness of 600 V normally-off GaN High Electron Mobility Transistors (HEMT) submitted to Short-Circuits (SC) operations. The obtained results reveal a severe dispersal in terms of SC robustness: some devices were able to support SC of a very long duration but others failed immediately, for the same electrical and thermal initial constraints. In order to understand this dispersal, static characterizations and collapserelated measurements have been carried out on a large number of devices from the same manufacturer with the same blocking voltage and different current ratings. Then, destructive shortcircuits were launched on these transistors. Finally, the time leading to failure (TLF) for a given DC voltage was correlated with the parameters extracted from the characterizations.

Original languageEnglish
Title of host publicationPCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9783800744244
DOIs
Publication statusPublished - 1 Jan 2017
Externally publishedYes
Event2017 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2017 - Nuremberg, Germany
Duration: 16 May 201718 May 2017

Publication series

NamePCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management

Conference

Conference2017 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2017
CountryGermany
CityNuremberg
Period16.5.1718.5.17

Fingerprint

Short circuit currents
Transistors
Robustness
Voltage
Electric potential
High electron mobility transistors
Immediately
Experimental Study
Electron
Hot Temperature

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Control and Optimization
  • Artificial Intelligence

Cite this

Landel, M., Lefebvre, S., Labrousse, D., Gautier, C., Zaki, F., & Khatir, Z. (2017). Dispersion of electrical characteristics and short-circuit robustness of 600V E-mode GaN transistors. In PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management [7990737] (PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SBMicro.2017.7990737

Dispersion of electrical characteristics and short-circuit robustness of 600V E-mode GaN transistors. / Landel, Matthieu; Lefebvre, Stéphane; Labrousse, Denis; Gautier, Cyrille; Zaki, Fadi; Khatir, Zoubir.

PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Institute of Electrical and Electronics Engineers Inc., 2017. 7990737 (PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Landel, M, Lefebvre, S, Labrousse, D, Gautier, C, Zaki, F & Khatir, Z 2017, Dispersion of electrical characteristics and short-circuit robustness of 600V E-mode GaN transistors. in PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management., 7990737, PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Institute of Electrical and Electronics Engineers Inc., 2017 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2017, Nuremberg, Germany, 16.5.17. https://doi.org/10.1109/SBMicro.2017.7990737
Landel M, Lefebvre S, Labrousse D, Gautier C, Zaki F, Khatir Z. Dispersion of electrical characteristics and short-circuit robustness of 600V E-mode GaN transistors. In PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Institute of Electrical and Electronics Engineers Inc. 2017. 7990737. (PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management). https://doi.org/10.1109/SBMicro.2017.7990737
Landel, Matthieu ; Lefebvre, Stéphane ; Labrousse, Denis ; Gautier, Cyrille ; Zaki, Fadi ; Khatir, Zoubir. / Dispersion of electrical characteristics and short-circuit robustness of 600V E-mode GaN transistors. PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Institute of Electrical and Electronics Engineers Inc., 2017. (PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management).
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