Dislocation structures and strengthening of ion-implanted metals and alloys

Yu P. Sharkeev, A. N. Didenko, E. V. Kozlov

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9 Citations (Scopus)


This article surveys the empirical data on the "long-range effect" (changes in defect structure and physicomechanical properties at distances considerably exceeding the mean free path of ions) seen in the ion implantation of metallic materials and semiconductors. Results are presented from electron-microscope studies of dislocation structures formed in ion-implanted metallic materials which are initially in different states. It is shown that the character of the dislocation structure and its quantitative characteristics in ion-implanted metals and alloys depend on the initial state of the target, the species and energy of the ions, and the radiation dose. Data obtained on the change in microstructure with depth is combined with data from other authors and correlated with the results of a study of macroscopic characteristics (wear resistance, microhardness). It is established that the "long-range effect" is seen in metallic materials which, in addition to having a low yield point or a high degree of plastic strain, also have a low dislocation density prior to ion implantation. Mechanisms by which the defect structure might be modified by ion implantation are explored.

Original languageEnglish
Pages (from-to)478-490
Number of pages13
JournalRussian Physics Journal
Issue number5
Publication statusPublished - May 1994

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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