Dislocation structure in near-surface layers of pure metals formed by ion implantation

A. N. Didenko, Alexander Ilyich Ryabchikov, G. P. Isaev, N. M. Arzubov, Yu P. Sharkeev, E. V. Kozlov, G. V. Pushkareva, I. V. Nikonova, A. E. Ligachev

Research School of High-Energy Physics

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30 Citations (Scopus)

Abstract

Layer-by-layer investigation of the dislocation structure in near-surface layers of pure metals affected by high-dose ion implantation (D = 1 × 10¹⁶- 1 × 10¹⁸ ions cm^-2, V = 40 kV, 1.2 MV) was carried out using electron microscopy. It was established that implantation of different ions in copper and α-Fe resulted in the formation of a developed dislocation structure in the near-surface layer, the thickness of which exceeded the ion range by several orders of magnitude. The dependences of dislocation density and dislocation loop concentration have been plotted vs. the distance to the irradiated surface.

Original language	English
Pages (from-to)	337-341
Number of pages	5
Journal	Materials Science and Engineering A
Volume	115
Issue number	C
DOIs	https://doi.org/10.1016/0921-5093(89)90700-4
Publication status	Published - 1 Aug 1989

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ASJC Scopus subject areas

Materials Science(all)
Engineering(all)

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Didenko, A. N., Ryabchikov, A. I., Isaev, G. P., Arzubov, N. M., Sharkeev, Y. P., Kozlov, E. V., ... Ligachev, A. E. (1989). Dislocation structure in near-surface layers of pure metals formed by ion implantation. Materials Science and Engineering A, 115(C), 337-341. https://doi.org/10.1016/0921-5093(89)90700-4

Dislocation structure in near-surface layers of pure metals formed by ion implantation. / Didenko, A. N.; Ryabchikov, Alexander Ilyich; Isaev, G. P.; Arzubov, N. M.; Sharkeev, Yu P.; Kozlov, E. V.; Pushkareva, G. V.; Nikonova, I. V.; Ligachev, A. E.

In: Materials Science and Engineering A, Vol. 115, No. C, 01.08.1989, p. 337-341.

Research output: Contribution to journal › Article

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abstract = "Layer-by-layer investigation of the dislocation structure in near-surface layers of pure metals affected by high-dose ion implantation (D = 1 × 1016- 1 × 1018 ions cm-2, V = 40 kV, 1.2 MV) was carried out using electron microscopy. It was established that implantation of different ions in copper and α-Fe resulted in the formation of a developed dislocation structure in the near-surface layer, the thickness of which exceeded the ion range by several orders of magnitude. The dependences of dislocation density and dislocation loop concentration have been plotted vs. the distance to the irradiated surface.",

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AU - Didenko, A. N.

AU - Ryabchikov, Alexander Ilyich

AU - Isaev, G. P.

AU - Arzubov, N. M.

AU - Sharkeev, Yu P.

AU - Kozlov, E. V.

AU - Pushkareva, G. V.

AU - Nikonova, I. V.

AU - Ligachev, A. E.

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AB - Layer-by-layer investigation of the dislocation structure in near-surface layers of pure metals affected by high-dose ion implantation (D = 1 × 1016- 1 × 1018 ions cm-2, V = 40 kV, 1.2 MV) was carried out using electron microscopy. It was established that implantation of different ions in copper and α-Fe resulted in the formation of a developed dislocation structure in the near-surface layer, the thickness of which exceeded the ion range by several orders of magnitude. The dependences of dislocation density and dislocation loop concentration have been plotted vs. the distance to the irradiated surface.

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10.1016/0921-5093(89)90700-4