Abstract
Dislocation processes occurring during plastic deformation of Si and Ge for θ = 0.50 to 0.95 (θ = T/Tm is the relative temperature) have been studied both by etch pit method and TEM. A similarity of dislocation processes in Si and Ge when compared in terms of θ has been found. In low‐temperature deformation (θ = 0.5 to 0.8) dislocation glide is realized and cross slip is activated. The cross slip gives rise to a multiplication of dislocations. The interaction and multiplication of dislocations are accompanied by the formation of dipoles including faulted ones, multipoles, and bundles in slip bands. A system of Lomer dislocations is the main source of long‐range internal stresses in low‐temperature deformation. In high‐temperature deformation (θ > 0.8) gliding of dislocations combined with climb is realized. This results in decreasing the number of dipoles and Lomer dislocations. At θ > 0.8 a main mechanism of dislocation interaction is their intersection with the degeneration of a quadrupole node into two triple ones.
| Original language | English |
|---|---|
| Pages (from-to) | 355-364 |
| Number of pages | 10 |
| Journal | physica status solidi (a) |
| Volume | 28 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1 Jan 1975 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Dislocation processes during plastic deformation of Si and Ge in the range 0.50 to 0.95 of the melting temperature. / Aseev, A. L.; Golobokov, Yu N.; Stenin, S. I.
In: physica status solidi (a), Vol. 28, No. 1, 01.01.1975, p. 355-364.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Dislocation processes during plastic deformation of Si and Ge in the range 0.50 to 0.95 of the melting temperature
AU - Aseev, A. L.
AU - Golobokov, Yu N.
AU - Stenin, S. I.
PY - 1975/1/1
Y1 - 1975/1/1
N2 - Dislocation processes occurring during plastic deformation of Si and Ge for θ = 0.50 to 0.95 (θ = T/Tm is the relative temperature) have been studied both by etch pit method and TEM. A similarity of dislocation processes in Si and Ge when compared in terms of θ has been found. In low‐temperature deformation (θ = 0.5 to 0.8) dislocation glide is realized and cross slip is activated. The cross slip gives rise to a multiplication of dislocations. The interaction and multiplication of dislocations are accompanied by the formation of dipoles including faulted ones, multipoles, and bundles in slip bands. A system of Lomer dislocations is the main source of long‐range internal stresses in low‐temperature deformation. In high‐temperature deformation (θ > 0.8) gliding of dislocations combined with climb is realized. This results in decreasing the number of dipoles and Lomer dislocations. At θ > 0.8 a main mechanism of dislocation interaction is their intersection with the degeneration of a quadrupole node into two triple ones.
AB - Dislocation processes occurring during plastic deformation of Si and Ge for θ = 0.50 to 0.95 (θ = T/Tm is the relative temperature) have been studied both by etch pit method and TEM. A similarity of dislocation processes in Si and Ge when compared in terms of θ has been found. In low‐temperature deformation (θ = 0.5 to 0.8) dislocation glide is realized and cross slip is activated. The cross slip gives rise to a multiplication of dislocations. The interaction and multiplication of dislocations are accompanied by the formation of dipoles including faulted ones, multipoles, and bundles in slip bands. A system of Lomer dislocations is the main source of long‐range internal stresses in low‐temperature deformation. In high‐temperature deformation (θ > 0.8) gliding of dislocations combined with climb is realized. This results in decreasing the number of dipoles and Lomer dislocations. At θ > 0.8 a main mechanism of dislocation interaction is their intersection with the degeneration of a quadrupole node into two triple ones.
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U2 - 10.1002/pssa.2210280141
DO - 10.1002/pssa.2210280141
M3 - Article
VL - 28
SP - 355
EP - 364
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
SN - 0031-8965
IS - 1
ER -