Dislocation network developed in titanium nitride by ion implantation

Anthony J. Perry, Yuri P. Sharkeev, Daniel E. Geist, Sergey V. Fortuna

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The present work is concerned with microstructural changes brought about by ion implantation into TiN as-deposited by classical chemical vapor deposition onto cemented carbide substrates. After implantation the ions occupy an implanted zone (IZ) extending to a depth of about 80 nm. The transmission electron microscopy study shows that implantation can lead to the formation of subgrains in the IZ within the original grain structure without changing the grain size. The energy carried by the ions affects the material to far greater depths and a dislocation network is formed below the IZ, termed the implantation affected zone (IAZ). The dislocation density in the IAZ as determined here by x-ray diffraction depends on the total energy carried by the implanted ions. There is a threshold level before a compressive residual stress is developed after which the stress is proportional to the energy, reaching values as high as 3-4 GPa. A mechanism is proposed for the development of the IAZ where an oscillating stress field is developed at the boundary between the IZ and the IAZ and allows the local emission of dislocation fluxes in mezobands into the IAZ.

Original languageEnglish
Pages (from-to)1848-1853
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume17
Issue number4
DOIs
Publication statusPublished - 1 Dec 1999

Fingerprint

Titanium nitride
titanium nitrides
Ion implantation
ion implantation
implantation
Ions
Crystal microstructure
Compressive stress
Carbides
Chemical vapor deposition
Residual stresses
Diffraction
Fluxes
Transmission electron microscopy
X rays
Substrates
ions
titanium nitride
carbides
stress distribution

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Dislocation network developed in titanium nitride by ion implantation. / Perry, Anthony J.; Sharkeev, Yuri P.; Geist, Daniel E.; Fortuna, Sergey V.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 17, No. 4, 01.12.1999, p. 1848-1853.

Research output: Contribution to journalArticle

@article{2fe3298413f749e490e54ced05cdac54,
title = "Dislocation network developed in titanium nitride by ion implantation",
abstract = "The present work is concerned with microstructural changes brought about by ion implantation into TiN as-deposited by classical chemical vapor deposition onto cemented carbide substrates. After implantation the ions occupy an implanted zone (IZ) extending to a depth of about 80 nm. The transmission electron microscopy study shows that implantation can lead to the formation of subgrains in the IZ within the original grain structure without changing the grain size. The energy carried by the ions affects the material to far greater depths and a dislocation network is formed below the IZ, termed the implantation affected zone (IAZ). The dislocation density in the IAZ as determined here by x-ray diffraction depends on the total energy carried by the implanted ions. There is a threshold level before a compressive residual stress is developed after which the stress is proportional to the energy, reaching values as high as 3-4 GPa. A mechanism is proposed for the development of the IAZ where an oscillating stress field is developed at the boundary between the IZ and the IAZ and allows the local emission of dislocation fluxes in mezobands into the IAZ.",
author = "Perry, {Anthony J.} and Sharkeev, {Yuri P.} and Geist, {Daniel E.} and Fortuna, {Sergey V.}",
year = "1999",
month = "12",
day = "1",
doi = "10.1116/1.581903",
language = "English",
volume = "17",
pages = "1848--1853",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "4",

}

TY - JOUR

T1 - Dislocation network developed in titanium nitride by ion implantation

AU - Perry, Anthony J.

AU - Sharkeev, Yuri P.

AU - Geist, Daniel E.

AU - Fortuna, Sergey V.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - The present work is concerned with microstructural changes brought about by ion implantation into TiN as-deposited by classical chemical vapor deposition onto cemented carbide substrates. After implantation the ions occupy an implanted zone (IZ) extending to a depth of about 80 nm. The transmission electron microscopy study shows that implantation can lead to the formation of subgrains in the IZ within the original grain structure without changing the grain size. The energy carried by the ions affects the material to far greater depths and a dislocation network is formed below the IZ, termed the implantation affected zone (IAZ). The dislocation density in the IAZ as determined here by x-ray diffraction depends on the total energy carried by the implanted ions. There is a threshold level before a compressive residual stress is developed after which the stress is proportional to the energy, reaching values as high as 3-4 GPa. A mechanism is proposed for the development of the IAZ where an oscillating stress field is developed at the boundary between the IZ and the IAZ and allows the local emission of dislocation fluxes in mezobands into the IAZ.

AB - The present work is concerned with microstructural changes brought about by ion implantation into TiN as-deposited by classical chemical vapor deposition onto cemented carbide substrates. After implantation the ions occupy an implanted zone (IZ) extending to a depth of about 80 nm. The transmission electron microscopy study shows that implantation can lead to the formation of subgrains in the IZ within the original grain structure without changing the grain size. The energy carried by the ions affects the material to far greater depths and a dislocation network is formed below the IZ, termed the implantation affected zone (IAZ). The dislocation density in the IAZ as determined here by x-ray diffraction depends on the total energy carried by the implanted ions. There is a threshold level before a compressive residual stress is developed after which the stress is proportional to the energy, reaching values as high as 3-4 GPa. A mechanism is proposed for the development of the IAZ where an oscillating stress field is developed at the boundary between the IZ and the IAZ and allows the local emission of dislocation fluxes in mezobands into the IAZ.

UR - http://www.scopus.com/inward/record.url?scp=0009852666&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0009852666&partnerID=8YFLogxK

U2 - 10.1116/1.581903

DO - 10.1116/1.581903

M3 - Article

AN - SCOPUS:0009852666

VL - 17

SP - 1848

EP - 1853

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 4

ER -