Abstract
The results of experimental and computer investigation of discharge development features in three-layer insulation systems under conditions similar to a uniform external field are given. The influence of the relationship between the dielectric permittivity of a basic dielectric (εd) and barrier (εb) as well as the position of the layer interfaces (r) on the space-time discharge characteristics is studied. For computer investigation, a fractal dielectric breakdown model is used. The space charges resulting from differences in layer dielectric permittivity are shown to induce an electric field distribution, which has a significant influence on the character of the discharge structure development. For εd εb > 3, field redistribution is sufficient to cause holding of discharge channels in the barrier layer. This is more efficient at r ≈ 0.25. In this case the maximum increase in time before the three-layer insulation systems are broken down is observed.
| Original language | English |
|---|---|
| Pages (from-to) | 43-48 |
| Number of pages | 6 |
| Journal | Electrical Technology |
| Volume | 1994 |
| Issue number | 3 |
| Publication status | Published - 1994 |
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Keywords
- discharge
- electric field
- insulating strength
- investigation
- Three-layer dielectric
ASJC Scopus subject areas
- Engineering(all)
- Energy(all)
Cite this
Discharge development in layered dielectrics. / Gefle, O. S.; Demin, A. V.; Kukhta, V. R.; Lebedev, S. M.; Lopatin, V. V.; Noskov, M. D.
In: Electrical Technology, Vol. 1994, No. 3, 1994, p. 43-48.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Discharge development in layered dielectrics
AU - Gefle, O. S.
AU - Demin, A. V.
AU - Kukhta, V. R.
AU - Lebedev, S. M.
AU - Lopatin, V. V.
AU - Noskov, M. D.
PY - 1994
Y1 - 1994
N2 - The results of experimental and computer investigation of discharge development features in three-layer insulation systems under conditions similar to a uniform external field are given. The influence of the relationship between the dielectric permittivity of a basic dielectric (εd) and barrier (εb) as well as the position of the layer interfaces (r) on the space-time discharge characteristics is studied. For computer investigation, a fractal dielectric breakdown model is used. The space charges resulting from differences in layer dielectric permittivity are shown to induce an electric field distribution, which has a significant influence on the character of the discharge structure development. For εd εb > 3, field redistribution is sufficient to cause holding of discharge channels in the barrier layer. This is more efficient at r ≈ 0.25. In this case the maximum increase in time before the three-layer insulation systems are broken down is observed.
AB - The results of experimental and computer investigation of discharge development features in three-layer insulation systems under conditions similar to a uniform external field are given. The influence of the relationship between the dielectric permittivity of a basic dielectric (εd) and barrier (εb) as well as the position of the layer interfaces (r) on the space-time discharge characteristics is studied. For computer investigation, a fractal dielectric breakdown model is used. The space charges resulting from differences in layer dielectric permittivity are shown to induce an electric field distribution, which has a significant influence on the character of the discharge structure development. For εd εb > 3, field redistribution is sufficient to cause holding of discharge channels in the barrier layer. This is more efficient at r ≈ 0.25. In this case the maximum increase in time before the three-layer insulation systems are broken down is observed.
KW - discharge
KW - electric field
KW - insulating strength
KW - investigation
KW - Three-layer dielectric
UR - http://www.scopus.com/inward/record.url?scp=5544238422&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=5544238422&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:5544238422
VL - 1994
SP - 43
EP - 48
JO - Electrical Technology
JF - Electrical Technology
SN - 0965-5433
IS - 3
ER -