Discharge development in layered dielectrics

O. S. Gefle, A. V. Demin, V. R. Kukhta, S. M. Lebedev, V. V. Lopatin, M. D. Noskov

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The results of experimental and computer investigation of discharge development features in three-layer insulation systems under conditions similar to a uniform external field are given. The influence of the relationship between the dielectric permittivity of a basic dielectric (εd) and barrier (εb) as well as the position of the layer interfaces (r) on the space-time discharge characteristics is studied. For computer investigation, a fractal dielectric breakdown model is used. The space charges resulting from differences in layer dielectric permittivity are shown to induce an electric field distribution, which has a significant influence on the character of the discharge structure development. For εd εb > 3, field redistribution is sufficient to cause holding of discharge channels in the barrier layer. This is more efficient at r ≈ 0.25. In this case the maximum increase in time before the three-layer insulation systems are broken down is observed.

Original languageEnglish
Pages (from-to)43-48
Number of pages6
JournalElectrical Technology
Volume1994
Issue number3
Publication statusPublished - 1994

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Insulation
Permittivity
Electric breakdown
Electric space charge
Fractals
Electric fields

Keywords

  • discharge
  • electric field
  • insulating strength
  • investigation
  • Three-layer dielectric

ASJC Scopus subject areas

  • Engineering(all)
  • Energy(all)

Cite this

Gefle, O. S., Demin, A. V., Kukhta, V. R., Lebedev, S. M., Lopatin, V. V., & Noskov, M. D. (1994). Discharge development in layered dielectrics. Electrical Technology, 1994(3), 43-48.

Discharge development in layered dielectrics. / Gefle, O. S.; Demin, A. V.; Kukhta, V. R.; Lebedev, S. M.; Lopatin, V. V.; Noskov, M. D.

In: Electrical Technology, Vol. 1994, No. 3, 1994, p. 43-48.

Research output: Contribution to journalArticle

Gefle, OS, Demin, AV, Kukhta, VR, Lebedev, SM, Lopatin, VV & Noskov, MD 1994, 'Discharge development in layered dielectrics', Electrical Technology, vol. 1994, no. 3, pp. 43-48.
Gefle OS, Demin AV, Kukhta VR, Lebedev SM, Lopatin VV, Noskov MD. Discharge development in layered dielectrics. Electrical Technology. 1994;1994(3):43-48.
Gefle, O. S. ; Demin, A. V. ; Kukhta, V. R. ; Lebedev, S. M. ; Lopatin, V. V. ; Noskov, M. D. / Discharge development in layered dielectrics. In: Electrical Technology. 1994 ; Vol. 1994, No. 3. pp. 43-48.
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