Different type annealing effect on the properties of ion-implanted layers and thermal stability of semi-insulating GaAs

V. M. Ardyshev, V. V. Peshev, A. P. Surzhikov

Research output: Contribution to journalArticle

Abstract

By measurements of specific electric resistance ρ, C-V-characteristics and DLTS the effect of postimplantation annealing type on characteristics of Si-implanted semi-insulator GaAs have been studied. It is shown that 'electron-beam' annealing with 1-2 MeV electron energy at 630°C provides a high degree of 28Si activation, stability of ρ, reproducibility of concentration distribution profiles and the smaller concentration of deep level defects.

Original languageEnglish
Pages (from-to)91-95
Number of pages5
JournalFizika i Khimiya Obrabotki Materialov
Issue number3
Publication statusPublished - May 1998

ASJC Scopus subject areas

  • Materials Science(all)

Fingerprint Dive into the research topics of 'Different type annealing effect on the properties of ion-implanted layers and thermal stability of semi-insulating GaAs'. Together they form a unique fingerprint.

  • Cite this