By measurements of specific electric resistance ρ, C-V-characteristics and DLTS the effect of postimplantation annealing type on characteristics of Si-implanted semi-insulator GaAs have been studied. It is shown that 'electron-beam' annealing with 1-2 MeV electron energy at 630°C provides a high degree of 28Si activation, stability of ρ, reproducibility of concentration distribution profiles and the smaller concentration of deep level defects.
|Number of pages||5|
|Journal||Fizika i Khimiya Obrabotki Materialov|
|Publication status||Published - May 1998|
ASJC Scopus subject areas
- Materials Science(all)