Abstract
By measurements of specific electric resistance ρ, C-V-characteristics and DLTS the effect of postimplantation annealing type on characteristics of Si-implanted semi-insulator GaAs have been studied. It is shown that 'electron-beam' annealing with 1-2 MeV electron energy at 630°C provides a high degree of 28Si activation, stability of ρ, reproducibility of concentration distribution profiles and the smaller concentration of deep level defects.
| Original language | English |
|---|---|
| Pages (from-to) | 91-95 |
| Number of pages | 5 |
| Journal | Fizika i Khimiya Obrabotki Materialov |
| Issue number | 3 |
| Publication status | Published - May 1998 |
ASJC Scopus subject areas
- Materials Science(all)
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Ardyshev, V. M., Peshev, V. V., & Surzhikov, A. P. (1998). Different type annealing effect on the properties of ion-implanted layers and thermal stability of semi-insulating GaAs. Fizika i Khimiya Obrabotki Materialov, (3), 91-95.