Different type annealing effect on the properties of ion-implanted layers and thermal stability of semi-insulating GaAs

V. M. Ardyshev, V. V. Peshev, A. P. Surzhikov

Research Laboratory for Electronics, Semiconductors and Dielectrics

Research output: Contribution to journal › Article › peer-review

Abstract

By measurements of specific electric resistance ρ, C-V-characteristics and DLTS the effect of postimplantation annealing type on characteristics of Si-implanted semi-insulator GaAs have been studied. It is shown that 'electron-beam' annealing with 1-2 MeV electron energy at 630°C provides a high degree of ²⁸Si activation, stability of ρ, reproducibility of concentration distribution profiles and the smaller concentration of deep level defects.

Original language	English
Pages (from-to)	91-95
Number of pages	5
Journal	Fizika i Khimiya Obrabotki Materialov
Issue number	3
Publication status	Published - May 1998

ASJC Scopus subject areas

Materials Science(all)

Fingerprint Dive into the research topics of 'Different type annealing effect on the properties of ion-implanted layers and thermal stability of semi-insulating GaAs'. Together they form a unique fingerprint.

Cite this

@article{44f01148e76b4d3aad50db0a7c7678b5,

title = "Different type annealing effect on the properties of ion-implanted layers and thermal stability of semi-insulating GaAs",

abstract = "By measurements of specific electric resistance ρ, C-V-characteristics and DLTS the effect of postimplantation annealing type on characteristics of Si-implanted semi-insulator GaAs have been studied. It is shown that 'electron-beam' annealing with 1-2 MeV electron energy at 630°C provides a high degree of 28Si activation, stability of ρ, reproducibility of concentration distribution profiles and the smaller concentration of deep level defects.",

author = "Ardyshev, {V. M.} and Peshev, {V. V.} and Surzhikov, {A. P.}",

year = "1998",

month = may,

language = "English",

pages = "91--95",

journal = "Fizika i Khimiya Obrabotki Materialov",

issn = "0015-3214",

publisher = "Izdatel'stvo Nauka",

number = "3",

}

TY - JOUR

T1 - Different type annealing effect on the properties of ion-implanted layers and thermal stability of semi-insulating GaAs

AU - Ardyshev, V. M.

AU - Peshev, V. V.

AU - Surzhikov, A. P.

PY - 1998/5

Y1 - 1998/5

N2 - By measurements of specific electric resistance ρ, C-V-characteristics and DLTS the effect of postimplantation annealing type on characteristics of Si-implanted semi-insulator GaAs have been studied. It is shown that 'electron-beam' annealing with 1-2 MeV electron energy at 630°C provides a high degree of 28Si activation, stability of ρ, reproducibility of concentration distribution profiles and the smaller concentration of deep level defects.

AB - By measurements of specific electric resistance ρ, C-V-characteristics and DLTS the effect of postimplantation annealing type on characteristics of Si-implanted semi-insulator GaAs have been studied. It is shown that 'electron-beam' annealing with 1-2 MeV electron energy at 630°C provides a high degree of 28Si activation, stability of ρ, reproducibility of concentration distribution profiles and the smaller concentration of deep level defects.

UR - http://www.scopus.com/inward/record.url?scp=0032063982&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032063982&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032063982

SP - 91

EP - 95

JO - Fizika i Khimiya Obrabotki Materialov

JF - Fizika i Khimiya Obrabotki Materialov

SN - 0015-3214

IS - 3

ER -