Different type annealing effect on the properties of ion-implanted layers and thermal stability of semi-insulating GaAs

V. M. Ardyshev, V. V. Peshev, A. P. Surzhikov

Research Laboratory for Electronics, Semiconductors and Dielectrics

Research output: Contribution to journal › Article › peer-review

Abstract

By measurements of specific electric resistance ρ, C-V-characteristics and DLTS the effect of postimplantation annealing type on characteristics of Si-implanted semi-insulator GaAs have been studied. It is shown that 'electron-beam' annealing with 1-2 MeV electron energy at 630°C provides a high degree of ²⁸Si activation, stability of ρ, reproducibility of concentration distribution profiles and the smaller concentration of deep level defects.

Original language	English
Pages (from-to)	91-95
Number of pages	5
Journal	Fizika i Khimiya Obrabotki Materialov
Issue number	3
Publication status	Published - May 1998

ASJC Scopus subject areas

Materials Science(all)

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abstract = "By measurements of specific electric resistance ρ, C-V-characteristics and DLTS the effect of postimplantation annealing type on characteristics of Si-implanted semi-insulator GaAs have been studied. It is shown that 'electron-beam' annealing with 1-2 MeV electron energy at 630°C provides a high degree of 28Si activation, stability of ρ, reproducibility of concentration distribution profiles and the smaller concentration of deep level defects.",

author = "Ardyshev, {V. M.} and Peshev, {V. V.} and Surzhikov, {A. P.}",

year = "1998",

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AU - Ardyshev, V. M.

AU - Peshev, V. V.

AU - Surzhikov, A. P.

PY - 1998/5

Y1 - 1998/5

N2 - By measurements of specific electric resistance ρ, C-V-characteristics and DLTS the effect of postimplantation annealing type on characteristics of Si-implanted semi-insulator GaAs have been studied. It is shown that 'electron-beam' annealing with 1-2 MeV electron energy at 630°C provides a high degree of 28Si activation, stability of ρ, reproducibility of concentration distribution profiles and the smaller concentration of deep level defects.

AB - By measurements of specific electric resistance ρ, C-V-characteristics and DLTS the effect of postimplantation annealing type on characteristics of Si-implanted semi-insulator GaAs have been studied. It is shown that 'electron-beam' annealing with 1-2 MeV electron energy at 630°C provides a high degree of 28Si activation, stability of ρ, reproducibility of concentration distribution profiles and the smaller concentration of deep level defects.

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ER -

Different type annealing effect on the properties of ion-implanted layers and thermal stability of semi-insulating GaAs

Abstract

ASJC Scopus subject areas

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