Difference in high-temperature oxidation resistance of amorphous Zr-Si-N and W-Si-N films with a high Si content

P. Zeman, J. Musil

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

The high-temperature oxidation resistance of amorphous Zr-Si-N and W-Si-N films with a high Si content (≥20 at.%) deposited by reactive dc magnetron sputtering at different partial pressures of nitrogen was systematically investigated by means of a symmetrical high-resolution thermogravimetry in a flowing air up to an annealing temperature of 1300 °C (a temperature limit for Si(1 0 0) substrate). Additional analyses including X-ray diffraction (XRD), light optical microscopy (LOM), scanning electron microscopy (SEM), atomic force microscopy (AFM), and microhardness measurement were carried out as well. The obtained results showed (i) an excellent high-temperature oxidation resistance of the Zr-Si-N films up to 1300 °C, (ii) a considerably lower oxidation resistance of the W-Si-N films. The W-Si-N films are completely oxidized at 800 °C with a subsequent volatilization of unstable WO x oxides. On the other hand, the Zr-Si-N films are oxidized only very slightly on the surface, where a stable oxide barrier layer preventing further inward oxygen diffusion is formed. The thickness of the oxide layer is only about of 3% of the total film thickness. The phase composition, thermal stability of individual phases and amorphous structure were found to be key factors to achieve a high oxidation resistance.

Original languageEnglish
Pages (from-to)8319-8325
Number of pages7
JournalApplied Surface Science
Volume252
Issue number23
DOIs
Publication statusPublished - 30 Sep 2006

Fingerprint

Thermooxidation
Oxidation resistance
Oxides
Optical microscopy
Reactive sputtering
Vaporization
Phase composition
Partial pressure
Magnetron sputtering
Microhardness
Film thickness
Thermogravimetric analysis
Atomic force microscopy
Thermodynamic stability
Nitrogen
Annealing
Oxygen
X ray diffraction
Temperature
Scanning electron microscopy

Keywords

  • Oxidation resistance
  • Sputtering
  • Thermogravimetry
  • W-Si-N
  • Zr-Si-N

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Difference in high-temperature oxidation resistance of amorphous Zr-Si-N and W-Si-N films with a high Si content. / Zeman, P.; Musil, J.

In: Applied Surface Science, Vol. 252, No. 23, 30.09.2006, p. 8319-8325.

Research output: Contribution to journalArticle

@article{811e54ba7f514ec8a13bda0f389a0dab,
title = "Difference in high-temperature oxidation resistance of amorphous Zr-Si-N and W-Si-N films with a high Si content",
abstract = "The high-temperature oxidation resistance of amorphous Zr-Si-N and W-Si-N films with a high Si content (≥20 at.{\%}) deposited by reactive dc magnetron sputtering at different partial pressures of nitrogen was systematically investigated by means of a symmetrical high-resolution thermogravimetry in a flowing air up to an annealing temperature of 1300 °C (a temperature limit for Si(1 0 0) substrate). Additional analyses including X-ray diffraction (XRD), light optical microscopy (LOM), scanning electron microscopy (SEM), atomic force microscopy (AFM), and microhardness measurement were carried out as well. The obtained results showed (i) an excellent high-temperature oxidation resistance of the Zr-Si-N films up to 1300 °C, (ii) a considerably lower oxidation resistance of the W-Si-N films. The W-Si-N films are completely oxidized at 800 °C with a subsequent volatilization of unstable WO x oxides. On the other hand, the Zr-Si-N films are oxidized only very slightly on the surface, where a stable oxide barrier layer preventing further inward oxygen diffusion is formed. The thickness of the oxide layer is only about of 3{\%} of the total film thickness. The phase composition, thermal stability of individual phases and amorphous structure were found to be key factors to achieve a high oxidation resistance.",
keywords = "Oxidation resistance, Sputtering, Thermogravimetry, W-Si-N, Zr-Si-N",
author = "P. Zeman and J. Musil",
year = "2006",
month = "9",
day = "30",
doi = "10.1016/j.apsusc.2005.11.038",
language = "English",
volume = "252",
pages = "8319--8325",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "23",

}

TY - JOUR

T1 - Difference in high-temperature oxidation resistance of amorphous Zr-Si-N and W-Si-N films with a high Si content

AU - Zeman, P.

AU - Musil, J.

PY - 2006/9/30

Y1 - 2006/9/30

N2 - The high-temperature oxidation resistance of amorphous Zr-Si-N and W-Si-N films with a high Si content (≥20 at.%) deposited by reactive dc magnetron sputtering at different partial pressures of nitrogen was systematically investigated by means of a symmetrical high-resolution thermogravimetry in a flowing air up to an annealing temperature of 1300 °C (a temperature limit for Si(1 0 0) substrate). Additional analyses including X-ray diffraction (XRD), light optical microscopy (LOM), scanning electron microscopy (SEM), atomic force microscopy (AFM), and microhardness measurement were carried out as well. The obtained results showed (i) an excellent high-temperature oxidation resistance of the Zr-Si-N films up to 1300 °C, (ii) a considerably lower oxidation resistance of the W-Si-N films. The W-Si-N films are completely oxidized at 800 °C with a subsequent volatilization of unstable WO x oxides. On the other hand, the Zr-Si-N films are oxidized only very slightly on the surface, where a stable oxide barrier layer preventing further inward oxygen diffusion is formed. The thickness of the oxide layer is only about of 3% of the total film thickness. The phase composition, thermal stability of individual phases and amorphous structure were found to be key factors to achieve a high oxidation resistance.

AB - The high-temperature oxidation resistance of amorphous Zr-Si-N and W-Si-N films with a high Si content (≥20 at.%) deposited by reactive dc magnetron sputtering at different partial pressures of nitrogen was systematically investigated by means of a symmetrical high-resolution thermogravimetry in a flowing air up to an annealing temperature of 1300 °C (a temperature limit for Si(1 0 0) substrate). Additional analyses including X-ray diffraction (XRD), light optical microscopy (LOM), scanning electron microscopy (SEM), atomic force microscopy (AFM), and microhardness measurement were carried out as well. The obtained results showed (i) an excellent high-temperature oxidation resistance of the Zr-Si-N films up to 1300 °C, (ii) a considerably lower oxidation resistance of the W-Si-N films. The W-Si-N films are completely oxidized at 800 °C with a subsequent volatilization of unstable WO x oxides. On the other hand, the Zr-Si-N films are oxidized only very slightly on the surface, where a stable oxide barrier layer preventing further inward oxygen diffusion is formed. The thickness of the oxide layer is only about of 3% of the total film thickness. The phase composition, thermal stability of individual phases and amorphous structure were found to be key factors to achieve a high oxidation resistance.

KW - Oxidation resistance

KW - Sputtering

KW - Thermogravimetry

KW - W-Si-N

KW - Zr-Si-N

UR - http://www.scopus.com/inward/record.url?scp=33748291486&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33748291486&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2005.11.038

DO - 10.1016/j.apsusc.2005.11.038

M3 - Article

VL - 252

SP - 8319

EP - 8325

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 23

ER -