Abstract
Ion-heat modification in different regimes allow to adjust the surface resistivity ps of inorganic dielectrics from 1015 to 103 Ω/. The surface property changes depend on annealing temperature Tan and irradiation temperature Ti. The energetic characteristics of conduction σs and its stability in oxygen-contained media after irradiation of boron nitride (φ=(1-2) ·1017 C+cm2, Ti=300-1200 K) and subsequent annealing (P≤10 Pa, Tan=300-2000 K) were investigated. The Ti growth enlarge ps(T) and change energetic parameters owing to coexistence processes of defect accumulation, annealing and complexes reconfiguration too. Influence of these processes on dielectric properties become apparent after postimplantation annealing. The stable properties are formed after Ti<1000 K, T an=900-1200 K and/or Ti>500 K. Tan=1700-1750 K. Electron transport dominate at σs≥10-9 S/. However Fermi level shift develop to conduction band less compare with T i<500 K, σs≥10-4 S/. Holes conduction realise for weakly conductive surface at σs≥ 10-11 S/. Density of localised near Fermi level states are decreased as a result of strong compensation donor levels by deep acceptor levels. Strong field dependencies σs(E) are fixed at T>1200 K. Feature of high-temperature implantation is lower sensibility of surface to influence of oxygen-contained reagents owing to formation of stable defects.
| Original language | English |
|---|---|
| Title of host publication | 8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004 |
| Pages | 113-117 |
| Number of pages | 5 |
| Volume | 3 |
| Publication status | Published - 2005 |
| Event | 8th Korea-Russia International Symposium on Science and Technology, KORUS 2004 - Tomsk, Russian Federation Duration: 26 Jun 2004 → 3 Jul 2004 |
Other
| Other | 8th Korea-Russia International Symposium on Science and Technology, KORUS 2004 |
|---|---|
| Country | Russian Federation |
| City | Tomsk |
| Period | 26.6.04 → 3.7.04 |
Fingerprint
Keywords
- Annealing
- Conduction
- Defects
- Dielectrics
- Ion
- Properties
- Resistivity
ASJC Scopus subject areas
- Engineering(all)
Cite this
Dielectric properties of boron nitride after high-temperature implantation with ions. / Kabyshev, Alexander V.; Konusov, Fedor V.; Lopatin, Vladimir V.; Krivosheeva, Nataliya V.
8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004. Vol. 3 2005. p. 113-117.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Dielectric properties of boron nitride after high-temperature implantation with ions
AU - Kabyshev, Alexander V.
AU - Konusov, Fedor V.
AU - Lopatin, Vladimir V.
AU - Krivosheeva, Nataliya V.
PY - 2005
Y1 - 2005
N2 - Ion-heat modification in different regimes allow to adjust the surface resistivity ps of inorganic dielectrics from 1015 to 103 Ω/. The surface property changes depend on annealing temperature Tan and irradiation temperature Ti. The energetic characteristics of conduction σs and its stability in oxygen-contained media after irradiation of boron nitride (φ=(1-2) ·1017 C+cm2, Ti=300-1200 K) and subsequent annealing (P≤10 Pa, Tan=300-2000 K) were investigated. The Ti growth enlarge ps(T) and change energetic parameters owing to coexistence processes of defect accumulation, annealing and complexes reconfiguration too. Influence of these processes on dielectric properties become apparent after postimplantation annealing. The stable properties are formed after Ti<1000 K, T an=900-1200 K and/or Ti>500 K. Tan=1700-1750 K. Electron transport dominate at σs≥10-9 S/. However Fermi level shift develop to conduction band less compare with T i<500 K, σs≥10-4 S/. Holes conduction realise for weakly conductive surface at σs≥ 10-11 S/. Density of localised near Fermi level states are decreased as a result of strong compensation donor levels by deep acceptor levels. Strong field dependencies σs(E) are fixed at T>1200 K. Feature of high-temperature implantation is lower sensibility of surface to influence of oxygen-contained reagents owing to formation of stable defects.
AB - Ion-heat modification in different regimes allow to adjust the surface resistivity ps of inorganic dielectrics from 1015 to 103 Ω/. The surface property changes depend on annealing temperature Tan and irradiation temperature Ti. The energetic characteristics of conduction σs and its stability in oxygen-contained media after irradiation of boron nitride (φ=(1-2) ·1017 C+cm2, Ti=300-1200 K) and subsequent annealing (P≤10 Pa, Tan=300-2000 K) were investigated. The Ti growth enlarge ps(T) and change energetic parameters owing to coexistence processes of defect accumulation, annealing and complexes reconfiguration too. Influence of these processes on dielectric properties become apparent after postimplantation annealing. The stable properties are formed after Ti<1000 K, T an=900-1200 K and/or Ti>500 K. Tan=1700-1750 K. Electron transport dominate at σs≥10-9 S/. However Fermi level shift develop to conduction band less compare with T i<500 K, σs≥10-4 S/. Holes conduction realise for weakly conductive surface at σs≥ 10-11 S/. Density of localised near Fermi level states are decreased as a result of strong compensation donor levels by deep acceptor levels. Strong field dependencies σs(E) are fixed at T>1200 K. Feature of high-temperature implantation is lower sensibility of surface to influence of oxygen-contained reagents owing to formation of stable defects.
KW - Annealing
KW - Conduction
KW - Defects
KW - Dielectrics
KW - Ion
KW - Properties
KW - Resistivity
UR - http://www.scopus.com/inward/record.url?scp=29144522379&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=29144522379&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:29144522379
SN - 0780383834
SN - 9780780383838
VL - 3
SP - 113
EP - 117
BT - 8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004
ER -