Dielectric properties of boron nitride after high-temperature implantation with ions

Alexander V. Kabyshev, Fedor V. Konusov, Vladimir V. Lopatin, Nataliya V. Krivosheeva

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Ion-heat modification in different regimes allow to adjust the surface resistivity ps of inorganic dielectrics from 1015 to 103 Ω/. The surface property changes depend on annealing temperature Tan and irradiation temperature Ti. The energetic characteristics of conduction σs and its stability in oxygen-contained media after irradiation of boron nitride (φ=(1-2) ·1017 C+cm2, Ti=300-1200 K) and subsequent annealing (P≤10 Pa, Tan=300-2000 K) were investigated. The Ti growth enlarge ps(T) and change energetic parameters owing to coexistence processes of defect accumulation, annealing and complexes reconfiguration too. Influence of these processes on dielectric properties become apparent after postimplantation annealing. The stable properties are formed after Ti<1000 K, T an=900-1200 K and/or Ti>500 K. Tan=1700-1750 K. Electron transport dominate at σs≥10-9 S/. However Fermi level shift develop to conduction band less compare with T i<500 K, σs≥10-4 S/. Holes conduction realise for weakly conductive surface at σs≥ 10-11 S/. Density of localised near Fermi level states are decreased as a result of strong compensation donor levels by deep acceptor levels. Strong field dependencies σs(E) are fixed at T>1200 K. Feature of high-temperature implantation is lower sensibility of surface to influence of oxygen-contained reagents owing to formation of stable defects.

Original languageEnglish
Title of host publication8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004
Pages113-117
Number of pages5
Volume3
Publication statusPublished - 2005
Event8th Korea-Russia International Symposium on Science and Technology, KORUS 2004 - Tomsk, Russian Federation
Duration: 26 Jun 2004 → 3 Jul 2004

Other

Other8th Korea-Russia International Symposium on Science and Technology, KORUS 2004
CountryRussian Federation
CityTomsk
Period26.6.04 → 3.7.04

Keywords

  • Annealing
  • Conduction
  • Defects
  • Dielectrics
  • Ion
  • Properties
  • Resistivity

ASJC Scopus subject areas

  • Engineering(all)

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    Kabyshev, A. V., Konusov, F. V., Lopatin, V. V., & Krivosheeva, N. V. (2005). Dielectric properties of boron nitride after high-temperature implantation with ions. In 8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004 (Vol. 3, pp. 113-117)