Dielectric properties of boron nitride after high-temperature implantation with ions

Alexander V. Kabyshev, Fedor V. Konusov, Vladimir V. Lopatin, Nataliya V. Krivosheeva

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ion-heat modification in different regimes allow to adjust the surface resistivity ps of inorganic dielectrics from 1015 to 103 Ω/. The surface property changes depend on annealing temperature Tan and irradiation temperature Ti. The energetic characteristics of conduction σs and its stability in oxygen-contained media after irradiation of boron nitride (φ=(1-2) ·1017 C+cm2, Ti=300-1200 K) and subsequent annealing (P≤10 Pa, Tan=300-2000 K) were investigated. The Ti growth enlarge ps(T) and change energetic parameters owing to coexistence processes of defect accumulation, annealing and complexes reconfiguration too. Influence of these processes on dielectric properties become apparent after postimplantation annealing. The stable properties are formed after Ti<1000 K, T an=900-1200 K and/or Ti>500 K. Tan=1700-1750 K. Electron transport dominate at σs≥10-9 S/. However Fermi level shift develop to conduction band less compare with T i<500 K, σs≥10-4 S/. Holes conduction realise for weakly conductive surface at σs≥ 10-11 S/. Density of localised near Fermi level states are decreased as a result of strong compensation donor levels by deep acceptor levels. Strong field dependencies σs(E) are fixed at T>1200 K. Feature of high-temperature implantation is lower sensibility of surface to influence of oxygen-contained reagents owing to formation of stable defects.

Original languageEnglish
Title of host publication8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004
Pages113-117
Number of pages5
Volume3
Publication statusPublished - 2005
Event8th Korea-Russia International Symposium on Science and Technology, KORUS 2004 - Tomsk, Russian Federation
Duration: 26 Jun 20043 Jul 2004

Other

Other8th Korea-Russia International Symposium on Science and Technology, KORUS 2004
CountryRussian Federation
CityTomsk
Period26.6.043.7.04

Fingerprint

Boron nitride
Ion implantation
Dielectric properties
Annealing
Ions
Irradiation
Temperature
Defects
Oxygen
Fermi level
Conduction bands
Surface properties

Keywords

  • Annealing
  • Conduction
  • Defects
  • Dielectrics
  • Ion
  • Properties
  • Resistivity

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kabyshev, A. V., Konusov, F. V., Lopatin, V. V., & Krivosheeva, N. V. (2005). Dielectric properties of boron nitride after high-temperature implantation with ions. In 8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004 (Vol. 3, pp. 113-117)

Dielectric properties of boron nitride after high-temperature implantation with ions. / Kabyshev, Alexander V.; Konusov, Fedor V.; Lopatin, Vladimir V.; Krivosheeva, Nataliya V.

8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004. Vol. 3 2005. p. 113-117.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kabyshev, AV, Konusov, FV, Lopatin, VV & Krivosheeva, NV 2005, Dielectric properties of boron nitride after high-temperature implantation with ions. in 8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004. vol. 3, pp. 113-117, 8th Korea-Russia International Symposium on Science and Technology, KORUS 2004, Tomsk, Russian Federation, 26.6.04.
Kabyshev AV, Konusov FV, Lopatin VV, Krivosheeva NV. Dielectric properties of boron nitride after high-temperature implantation with ions. In 8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004. Vol. 3. 2005. p. 113-117
Kabyshev, Alexander V. ; Konusov, Fedor V. ; Lopatin, Vladimir V. ; Krivosheeva, Nataliya V. / Dielectric properties of boron nitride after high-temperature implantation with ions. 8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004. Vol. 3 2005. pp. 113-117
@inproceedings{d300a77ad3b745cb975fc23e0be6343a,
title = "Dielectric properties of boron nitride after high-temperature implantation with ions",
abstract = "Ion-heat modification in different regimes allow to adjust the surface resistivity ps of inorganic dielectrics from 1015 to 103 Ω/. The surface property changes depend on annealing temperature Tan and irradiation temperature Ti. The energetic characteristics of conduction σs and its stability in oxygen-contained media after irradiation of boron nitride (φ=(1-2) ·1017 C+cm2, Ti=300-1200 K) and subsequent annealing (P≤10 Pa, Tan=300-2000 K) were investigated. The Ti growth enlarge ps(T) and change energetic parameters owing to coexistence processes of defect accumulation, annealing and complexes reconfiguration too. Influence of these processes on dielectric properties become apparent after postimplantation annealing. The stable properties are formed after Ti<1000 K, T an=900-1200 K and/or Ti>500 K. Tan=1700-1750 K. Electron transport dominate at σs≥10-9 S/. However Fermi level shift develop to conduction band less compare with T i<500 K, σs≥10-4 S/. Holes conduction realise for weakly conductive surface at σs≥ 10-11 S/. Density of localised near Fermi level states are decreased as a result of strong compensation donor levels by deep acceptor levels. Strong field dependencies σs(E) are fixed at T>1200 K. Feature of high-temperature implantation is lower sensibility of surface to influence of oxygen-contained reagents owing to formation of stable defects.",
keywords = "Annealing, Conduction, Defects, Dielectrics, Ion, Properties, Resistivity",
author = "Kabyshev, {Alexander V.} and Konusov, {Fedor V.} and Lopatin, {Vladimir V.} and Krivosheeva, {Nataliya V.}",
year = "2005",
language = "English",
isbn = "0780383834",
volume = "3",
pages = "113--117",
booktitle = "8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004",

}

TY - GEN

T1 - Dielectric properties of boron nitride after high-temperature implantation with ions

AU - Kabyshev, Alexander V.

AU - Konusov, Fedor V.

AU - Lopatin, Vladimir V.

AU - Krivosheeva, Nataliya V.

PY - 2005

Y1 - 2005

N2 - Ion-heat modification in different regimes allow to adjust the surface resistivity ps of inorganic dielectrics from 1015 to 103 Ω/. The surface property changes depend on annealing temperature Tan and irradiation temperature Ti. The energetic characteristics of conduction σs and its stability in oxygen-contained media after irradiation of boron nitride (φ=(1-2) ·1017 C+cm2, Ti=300-1200 K) and subsequent annealing (P≤10 Pa, Tan=300-2000 K) were investigated. The Ti growth enlarge ps(T) and change energetic parameters owing to coexistence processes of defect accumulation, annealing and complexes reconfiguration too. Influence of these processes on dielectric properties become apparent after postimplantation annealing. The stable properties are formed after Ti<1000 K, T an=900-1200 K and/or Ti>500 K. Tan=1700-1750 K. Electron transport dominate at σs≥10-9 S/. However Fermi level shift develop to conduction band less compare with T i<500 K, σs≥10-4 S/. Holes conduction realise for weakly conductive surface at σs≥ 10-11 S/. Density of localised near Fermi level states are decreased as a result of strong compensation donor levels by deep acceptor levels. Strong field dependencies σs(E) are fixed at T>1200 K. Feature of high-temperature implantation is lower sensibility of surface to influence of oxygen-contained reagents owing to formation of stable defects.

AB - Ion-heat modification in different regimes allow to adjust the surface resistivity ps of inorganic dielectrics from 1015 to 103 Ω/. The surface property changes depend on annealing temperature Tan and irradiation temperature Ti. The energetic characteristics of conduction σs and its stability in oxygen-contained media after irradiation of boron nitride (φ=(1-2) ·1017 C+cm2, Ti=300-1200 K) and subsequent annealing (P≤10 Pa, Tan=300-2000 K) were investigated. The Ti growth enlarge ps(T) and change energetic parameters owing to coexistence processes of defect accumulation, annealing and complexes reconfiguration too. Influence of these processes on dielectric properties become apparent after postimplantation annealing. The stable properties are formed after Ti<1000 K, T an=900-1200 K and/or Ti>500 K. Tan=1700-1750 K. Electron transport dominate at σs≥10-9 S/. However Fermi level shift develop to conduction band less compare with T i<500 K, σs≥10-4 S/. Holes conduction realise for weakly conductive surface at σs≥ 10-11 S/. Density of localised near Fermi level states are decreased as a result of strong compensation donor levels by deep acceptor levels. Strong field dependencies σs(E) are fixed at T>1200 K. Feature of high-temperature implantation is lower sensibility of surface to influence of oxygen-contained reagents owing to formation of stable defects.

KW - Annealing

KW - Conduction

KW - Defects

KW - Dielectrics

KW - Ion

KW - Properties

KW - Resistivity

UR - http://www.scopus.com/inward/record.url?scp=29144522379&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=29144522379&partnerID=8YFLogxK

M3 - Conference contribution

SN - 0780383834

SN - 9780780383838

VL - 3

SP - 113

EP - 117

BT - 8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004

ER -