Dielectric properties of boron nitride after high-temperature implantation with ions

Alexander V. Kabyshev, Fedor V. Konusov, Vladimir V. Lopatin, Nataliya V. Krivosheeva

Research School of High-Energy Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Ion-heat modification in different regimes allow to adjust the surface resistivity p_s of inorganic dielectrics from 10¹⁵ to 10³ Ω/. The surface property changes depend on annealing temperature T_an and irradiation temperature T_i. The energetic characteristics of conduction σ_s and its stability in oxygen-contained media after irradiation of boron nitride (φ=(1-2) ·10¹⁷ C⁺cm², T_i=300-1200 K) and subsequent annealing (P≤10 Pa, T_an=300-2000 K) were investigated. The T_i growth enlarge p_s(T) and change energetic parameters owing to coexistence processes of defect accumulation, annealing and complexes reconfiguration too. Influence of these processes on dielectric properties become apparent after postimplantation annealing. The stable properties are formed after T_i<1000 K, T _an=900-1200 K and/or T_i>500 K. T_an=1700-1750 K. Electron transport dominate at σ_s≥10^-9 S/. However Fermi level shift develop to conduction band less compare with T _i<500 K, σ_s≥10^-4 S/. Holes conduction realise for weakly conductive surface at σ_s≥ 10^-11 S/. Density of localised near Fermi level states are decreased as a result of strong compensation donor levels by deep acceptor levels. Strong field dependencies σ_s(E) are fixed at T>1200 K. Feature of high-temperature implantation is lower sensibility of surface to influence of oxygen-contained reagents owing to formation of stable defects.

Original language	English
Title of host publication	8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004
Pages	113-117
Number of pages	5
Volume	3
Publication status	Published - 2005
Event	8th Korea-Russia International Symposium on Science and Technology, KORUS 2004 - Tomsk, Russian Federation Duration: 26 Jun 2004 → 3 Jul 2004

Other

Other	8th Korea-Russia International Symposium on Science and Technology, KORUS 2004
Country	Russian Federation
City	Tomsk
Period	26.6.04 → 3.7.04

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Keywords

Annealing
Conduction
Defects
Dielectrics
Ion
Properties
Resistivity

ASJC Scopus subject areas

Engineering(all)

Cite this

Kabyshev, A. V., Konusov, F. V., Lopatin, V. V., & Krivosheeva, N. V. (2005). Dielectric properties of boron nitride after high-temperature implantation with ions. In 8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004 (Vol. 3, pp. 113-117)

Dielectric properties of boron nitride after high-temperature implantation with ions. / Kabyshev, Alexander V.; Konusov, Fedor V.; Lopatin, Vladimir V.; Krivosheeva, Nataliya V.

8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004. Vol. 3 2005. p. 113-117.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kabyshev, AV, Konusov, FV, Lopatin, VV & Krivosheeva, NV 2005, Dielectric properties of boron nitride after high-temperature implantation with ions. in 8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004. vol. 3, pp. 113-117, 8th Korea-Russia International Symposium on Science and Technology, KORUS 2004, Tomsk, Russian Federation, 26.6.04.

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abstract = "Ion-heat modification in different regimes allow to adjust the surface resistivity ps of inorganic dielectrics from 1015 to 103 Ω/. The surface property changes depend on annealing temperature Tan and irradiation temperature Ti. The energetic characteristics of conduction σs and its stability in oxygen-contained media after irradiation of boron nitride (φ=(1-2) ·1017 C+cm2, Ti=300-1200 K) and subsequent annealing (P≤10 Pa, Tan=300-2000 K) were investigated. The Ti growth enlarge ps(T) and change energetic parameters owing to coexistence processes of defect accumulation, annealing and complexes reconfiguration too. Influence of these processes on dielectric properties become apparent after postimplantation annealing. The stable properties are formed after Ti<1000 K, T an=900-1200 K and/or Ti>500 K. Tan=1700-1750 K. Electron transport dominate at σs≥10-9 S/. However Fermi level shift develop to conduction band less compare with T i<500 K, σs≥10-4 S/. Holes conduction realise for weakly conductive surface at σs≥ 10-11 S/. Density of localised near Fermi level states are decreased as a result of strong compensation donor levels by deep acceptor levels. Strong field dependencies σs(E) are fixed at T>1200 K. Feature of high-temperature implantation is lower sensibility of surface to influence of oxygen-contained reagents owing to formation of stable defects.",

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