Development of filtered DC metal plasma ion implantation and coating deposition methods based on high-frequency short-pulsed bias voltage application

A. I. Ryabchikov, I. A. Ryabchikov, I. B. Stepanov

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

An innovative concept in the development of advanced coating deposition and ion implantation method including an application of filtered DC metal plasma source and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10-99% are considered. The regularities of ion implantation and metal plasma deposition for metal and dielectric samples are experimentally investigated. Experimentally, it has been shown that metal plasma-based ion implantation, high-concentration metal plasma ion implantation with compensation of ion surface sputtering by metal plasma deposition and ion-assisted coating deposition can be realized by variation of bias potential ranging from 0 V to 4 kV, with pulse repetition rate smoothly adjusted in the range (2-4.4)×105 pps and pulse duration ranging from 0.5 to 2 μs. Special features of the material treatment method depending on plasma concentration, pulse repetition rate and duty factor have been examined.

Original languageEnglish
Pages (from-to)331-336
Number of pages6
JournalVacuum
Volume78
Issue number2-4
DOIs
Publication statusPublished - 30 May 2005

Fingerprint

Bias voltage
Ion implantation
ion implantation
Metals
direct current
Plasmas
coatings
Coatings
electric potential
metals
Plasma deposition
Pulse repetition rate
pulse repetition rate
Ions
Plasma sources
regularity
Sputtering
implantation
ions
pulse duration

Keywords

  • High-frequency
  • Immersion implantation
  • Metal plasma
  • Short-pulsed

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

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AU - Stepanov, I. B.

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KW - Short-pulsed

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