Development of filtered DC metal plasma ion implantation and coating deposition methods based on high-frequency short-pulsed bias voltage application

A. I. Ryabchikov, I. A. Ryabchikov, I. B. Stepanov

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)

Abstract

An innovative concept in the development of advanced coating deposition and ion implantation method including an application of filtered DC metal plasma source and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10-99% are considered. The regularities of ion implantation and metal plasma deposition for metal and dielectric samples are experimentally investigated. Experimentally, it has been shown that metal plasma-based ion implantation, high-concentration metal plasma ion implantation with compensation of ion surface sputtering by metal plasma deposition and ion-assisted coating deposition can be realized by variation of bias potential ranging from 0 V to 4 kV, with pulse repetition rate smoothly adjusted in the range (2-4.4)×105 pps and pulse duration ranging from 0.5 to 2 μs. Special features of the material treatment method depending on plasma concentration, pulse repetition rate and duty factor have been examined.

Original languageEnglish
Pages (from-to)331-336
Number of pages6
JournalVacuum
Volume78
Issue number2-4
DOIs
Publication statusPublished - 30 May 2005

Keywords

  • High-frequency
  • Immersion implantation
  • Metal plasma
  • Short-pulsed

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

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