Development of a periodically structured monocrystalline target of Si for X-ray emission

K. Nakayama, M. Sekimura, I. Yanase, I. Endo, Y. Takashima, V. Kaplin, A. Potylitsin

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We have developed a Si monocrystalline target for producing X-rays by a relativistic electron beam. A grating structure was formed on a Si substrate by silicon micromachining technology with adequate accuracy. The targets were designed to produce 33 keV RTR X-rays from 900 MeV electrons. The width of the grating structure is the same as the thickness of the Si multi-foil targets, made for INS experiments as well as Tomsk experiments, already reported at RREPS95. All of these Si single crystal targets can be tilted at the Bragg angle condition of 33 keV RTR X-rays, to simultaneously produce 33 keV Parametric X Radiation. We can observe both of diffracted RTR and Parametric X Radiation. These results encourage us to study a new type of X-ray source based on a Si monocrystalline target using micromachining technology.

Original languageEnglish
Pages (from-to)236-238
Number of pages3
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume145
Issue number1-2
Publication statusPublished - 2 Oct 1998

Fingerprint

X rays
Micromachining
micromachining
x rays
Radiation
gratings
Silicon
Bragg angle
Metal foil
relativistic electron beams
Electron beams
radiation
Experiments
Single crystals
foils
Electrons
Substrates
single crystals
silicon
electrons

Keywords

  • Parametric X-rays
  • Si monocrystalline target
  • Transition radiation
  • X-ray source

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Development of a periodically structured monocrystalline target of Si for X-ray emission. / Nakayama, K.; Sekimura, M.; Yanase, I.; Endo, I.; Takashima, Y.; Kaplin, V.; Potylitsin, A.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 145, No. 1-2, 02.10.1998, p. 236-238.

Research output: Contribution to journalArticle

@article{0f0707c9937b444680783ef4b4b9aefe,
title = "Development of a periodically structured monocrystalline target of Si for X-ray emission",
abstract = "We have developed a Si monocrystalline target for producing X-rays by a relativistic electron beam. A grating structure was formed on a Si substrate by silicon micromachining technology with adequate accuracy. The targets were designed to produce 33 keV RTR X-rays from 900 MeV electrons. The width of the grating structure is the same as the thickness of the Si multi-foil targets, made for INS experiments as well as Tomsk experiments, already reported at RREPS95. All of these Si single crystal targets can be tilted at the Bragg angle condition of 33 keV RTR X-rays, to simultaneously produce 33 keV Parametric X Radiation. We can observe both of diffracted RTR and Parametric X Radiation. These results encourage us to study a new type of X-ray source based on a Si monocrystalline target using micromachining technology.",
keywords = "Parametric X-rays, Si monocrystalline target, Transition radiation, X-ray source",
author = "K. Nakayama and M. Sekimura and I. Yanase and I. Endo and Y. Takashima and V. Kaplin and A. Potylitsin",
year = "1998",
month = "10",
day = "2",
language = "English",
volume = "145",
pages = "236--238",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Development of a periodically structured monocrystalline target of Si for X-ray emission

AU - Nakayama, K.

AU - Sekimura, M.

AU - Yanase, I.

AU - Endo, I.

AU - Takashima, Y.

AU - Kaplin, V.

AU - Potylitsin, A.

PY - 1998/10/2

Y1 - 1998/10/2

N2 - We have developed a Si monocrystalline target for producing X-rays by a relativistic electron beam. A grating structure was formed on a Si substrate by silicon micromachining technology with adequate accuracy. The targets were designed to produce 33 keV RTR X-rays from 900 MeV electrons. The width of the grating structure is the same as the thickness of the Si multi-foil targets, made for INS experiments as well as Tomsk experiments, already reported at RREPS95. All of these Si single crystal targets can be tilted at the Bragg angle condition of 33 keV RTR X-rays, to simultaneously produce 33 keV Parametric X Radiation. We can observe both of diffracted RTR and Parametric X Radiation. These results encourage us to study a new type of X-ray source based on a Si monocrystalline target using micromachining technology.

AB - We have developed a Si monocrystalline target for producing X-rays by a relativistic electron beam. A grating structure was formed on a Si substrate by silicon micromachining technology with adequate accuracy. The targets were designed to produce 33 keV RTR X-rays from 900 MeV electrons. The width of the grating structure is the same as the thickness of the Si multi-foil targets, made for INS experiments as well as Tomsk experiments, already reported at RREPS95. All of these Si single crystal targets can be tilted at the Bragg angle condition of 33 keV RTR X-rays, to simultaneously produce 33 keV Parametric X Radiation. We can observe both of diffracted RTR and Parametric X Radiation. These results encourage us to study a new type of X-ray source based on a Si monocrystalline target using micromachining technology.

KW - Parametric X-rays

KW - Si monocrystalline target

KW - Transition radiation

KW - X-ray source

UR - http://www.scopus.com/inward/record.url?scp=0032475576&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032475576&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0032475576

VL - 145

SP - 236

EP - 238

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-2

ER -