Deterioration of Watt and Voltage Characteristics of AlGalnP Heterostructures under Irradiation by Fast Neutrons

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Abstract

The paper presents the results of studying characteristic deterioration of AlGaInP heterostructures with multiple quantum wells. The research was completed for light emitting diodes (emission wavelengths 623 nm and 590 nm) under fast neutron irradiation in passive mode. It has been revealed that the change in emission power and operating current under irradiation is conditioned by band gap and level of electron injection. Here, the change of current flowing mechanism is a distinctive parameter of the boundary between the first and second stages of emission power reduction caused by fast neutron irradiation of AlGaInP heterostructures (X=625 nm).

Original languageEnglish
Article number012026
JournalIOP Conference Series: Materials Science and Engineering
Volume110
Issue number1
DOIs
Publication statusPublished - 23 Feb 2016

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Neutron irradiation
Deterioration
Heterojunctions
Neutrons
Irradiation
Electron injection
Electric potential
Semiconductor quantum wells
Light emitting diodes
Energy gap
Wavelength

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Cite this

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abstract = "The paper presents the results of studying characteristic deterioration of AlGaInP heterostructures with multiple quantum wells. The research was completed for light emitting diodes (emission wavelengths 623 nm and 590 nm) under fast neutron irradiation in passive mode. It has been revealed that the change in emission power and operating current under irradiation is conditioned by band gap and level of electron injection. Here, the change of current flowing mechanism is a distinctive parameter of the boundary between the first and second stages of emission power reduction caused by fast neutron irradiation of AlGaInP heterostructures (X=625 nm).",
author = "Gradoboev, {A. V.} and Ksenia Nikolaevna Orlova",
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AB - The paper presents the results of studying characteristic deterioration of AlGaInP heterostructures with multiple quantum wells. The research was completed for light emitting diodes (emission wavelengths 623 nm and 590 nm) under fast neutron irradiation in passive mode. It has been revealed that the change in emission power and operating current under irradiation is conditioned by band gap and level of electron injection. Here, the change of current flowing mechanism is a distinctive parameter of the boundary between the first and second stages of emission power reduction caused by fast neutron irradiation of AlGaInP heterostructures (X=625 nm).

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