Deposition of the low resistive ITO-films by means of reactive magnetron sputtering of the In/Sn target on the cold substrate

Y. S. Zhidik, P. E. Troyan, E. V. Baturina, D. V. Korzhenko, Y. N. Yurjev

Research output: Contribution to journalConference article

Abstract

Detailed information on the deposition technology of the low-resistive ITO-films in oxygen-containing media by magnetron reactive sputtering from the In(90%)/Sn(10%) target on the cold substrate is given. Developed technology allows deposition ITO-films with sheet resistance 2-3 Ω/□, transparency higher than 90%. Developed technology is notable for high reproducibility of results and is compatible with production technology of semiconductor devices of optoelectronics.

Original languageEnglish
Article number012055
JournalIOP Conference Series: Materials Science and Engineering
Volume135
Issue number1
DOIs
Publication statusPublished - 2 Aug 2016
Event8th International Scientific Conference on Issues of Physics and Technology in Science, Industry and Medicine - Tomsk, Russian Federation
Duration: 1 Jun 20163 Jun 2016

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Reactive sputtering
Magnetron sputtering
Substrates
Sheet resistance
Semiconductor devices
Optoelectronic devices
Transparency
Oxygen

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

Cite this

Deposition of the low resistive ITO-films by means of reactive magnetron sputtering of the In/Sn target on the cold substrate. / Zhidik, Y. S.; Troyan, P. E.; Baturina, E. V.; Korzhenko, D. V.; Yurjev, Y. N.

In: IOP Conference Series: Materials Science and Engineering, Vol. 135, No. 1, 012055, 02.08.2016.

Research output: Contribution to journalConference article

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