Abstract
Detailed information on the deposition technology of the low-resistive ITO-films in oxygen-containing media by magnetron reactive sputtering from the In(90%)/Sn(10%) target on the cold substrate is given. Developed technology allows deposition ITO-films with sheet resistance 2-3 Ω/□, transparency higher than 90%. Developed technology is notable for high reproducibility of results and is compatible with production technology of semiconductor devices of optoelectronics.
| Original language | English |
|---|---|
| Article number | 012055 |
| Journal | IOP Conference Series: Materials Science and Engineering |
| Volume | 135 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2 Aug 2016 |
| Event | 8th International Scientific Conference on Issues of Physics and Technology in Science, Industry and Medicine - Tomsk, Russian Federation Duration: 1 Jun 2016 → 3 Jun 2016 |
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ASJC Scopus subject areas
- Materials Science(all)
- Engineering(all)
Cite this
Deposition of the low resistive ITO-films by means of reactive magnetron sputtering of the In/Sn target on the cold substrate. / Zhidik, Y. S.; Troyan, P. E.; Baturina, E. V.; Korzhenko, D. V.; Yurjev, Y. N.
In: IOP Conference Series: Materials Science and Engineering, Vol. 135, No. 1, 012055, 02.08.2016.Research output: Contribution to journal › Conference article
}
TY - JOUR
T1 - Deposition of the low resistive ITO-films by means of reactive magnetron sputtering of the In/Sn target on the cold substrate
AU - Zhidik, Y. S.
AU - Troyan, P. E.
AU - Baturina, E. V.
AU - Korzhenko, D. V.
AU - Yurjev, Y. N.
PY - 2016/8/2
Y1 - 2016/8/2
N2 - Detailed information on the deposition technology of the low-resistive ITO-films in oxygen-containing media by magnetron reactive sputtering from the In(90%)/Sn(10%) target on the cold substrate is given. Developed technology allows deposition ITO-films with sheet resistance 2-3 Ω/□, transparency higher than 90%. Developed technology is notable for high reproducibility of results and is compatible with production technology of semiconductor devices of optoelectronics.
AB - Detailed information on the deposition technology of the low-resistive ITO-films in oxygen-containing media by magnetron reactive sputtering from the In(90%)/Sn(10%) target on the cold substrate is given. Developed technology allows deposition ITO-films with sheet resistance 2-3 Ω/□, transparency higher than 90%. Developed technology is notable for high reproducibility of results and is compatible with production technology of semiconductor devices of optoelectronics.
UR - http://www.scopus.com/inward/record.url?scp=84995614769&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84995614769&partnerID=8YFLogxK
U2 - 10.1088/1757-899X/135/1/012055
DO - 10.1088/1757-899X/135/1/012055
M3 - Conference article
AN - SCOPUS:84995614769
VL - 135
JO - IOP Conference Series: Materials Science and Engineering
JF - IOP Conference Series: Materials Science and Engineering
SN - 1757-8981
IS - 1
M1 - 012055
ER -