Deposition of the low resistive ITO-films by means of reactive magnetron sputtering of the In/Sn target on the cold substrate

Y. S. Zhidik, P. E. Troyan, E. V. Baturina, D. V. Korzhenko, Y. N. Yurjev

The Weinberg Research Center

Research output: Contribution to journal › Conference article

Abstract

Detailed information on the deposition technology of the low-resistive ITO-films in oxygen-containing media by magnetron reactive sputtering from the In(90%)/Sn(10%) target on the cold substrate is given. Developed technology allows deposition ITO-films with sheet resistance 2-3 Ω/□, transparency higher than 90%. Developed technology is notable for high reproducibility of results and is compatible with production technology of semiconductor devices of optoelectronics.

Original language	English
Article number	012055
Journal	IOP Conference Series: Materials Science and Engineering
Volume	135
Issue number	1
DOIs	https://doi.org/10.1088/1757-899X/135/1/012055
Publication status	Published - 2 Aug 2016
Event	8th International Scientific Conference on Issues of Physics and Technology in Science, Industry and Medicine - Tomsk, Russian Federation Duration: 1 Jun 2016 → 3 Jun 2016

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ASJC Scopus subject areas

Materials Science(all)
Engineering(all)

Cite this

Zhidik, Y. S., Troyan, P. E., Baturina, E. V., Korzhenko, D. V., & Yurjev, Y. N. (2016). Deposition of the low resistive ITO-films by means of reactive magnetron sputtering of the In/Sn target on the cold substrate. IOP Conference Series: Materials Science and Engineering, 135(1), [012055]. https://doi.org/10.1088/1757-899X/135/1/012055

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AU - Baturina, E. V.

AU - Korzhenko, D. V.

AU - Yurjev, Y. N.

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Access to Document

10.1088/1757-899X/135/1/012055