Abstract
Detailed information on the deposition technology of the low-resistive ITO-films in oxygen-containing media by magnetron reactive sputtering from the In(90%)/Sn(10%) target on the cold substrate is given. Developed technology allows deposition ITO-films with sheet resistance 2-3 Ω/□, transparency higher than 90%. Developed technology is notable for high reproducibility of results and is compatible with production technology of semiconductor devices of optoelectronics.
| Original language | English |
|---|---|
| Article number | 012055 |
| Journal | IOP Conference Series: Materials Science and Engineering |
| Volume | 135 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2 Aug 2016 |
| Event | 8th International Scientific Conference on Issues of Physics and Technology in Science, Industry and Medicine - Tomsk, Russian Federation Duration: 1 Jun 2016 → 3 Jun 2016 |
ASJC Scopus subject areas
- Materials Science(all)
- Engineering(all)
Fingerprint Dive into the research topics of 'Deposition of the low resistive ITO-films by means of reactive magnetron sputtering of the In/Sn target on the cold substrate'. Together they form a unique fingerprint.
Cite this
Zhidik, Y. S., Troyan, P. E., Baturina, E. V., Korzhenko, D. V., & Yurjev, Y. N. (2016). Deposition of the low resistive ITO-films by means of reactive magnetron sputtering of the In/Sn target on the cold substrate. IOP Conference Series: Materials Science and Engineering, 135(1), [012055]. https://doi.org/10.1088/1757-899X/135/1/012055