Deposition of dielectric films on silicon using a fore-vacuum plasma electron source

D. B. Zolotukhin, E. M. Oks, A. V. Tyunkov, Yu G. Yushkov

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We describe an experiment on the use of a fore-vacuum-pressure, plasma-cathode, electron beam source with current up to 100 mA and beam energy up to 15 keV for deposition of Mg and Al oxide films on Si substrates in an oxygen atmosphere at a pressure of 10 Pa. The metals (Al and Mg) were evaporated and ionized using the electron beam with the formation of a gas-metal beam-plasma. The plasma was deposited on the surface of Si substrates. The elemental composition of the deposited films was analyzed.

Original languageEnglish
Article number063302
JournalReview of Scientific Instruments
Volume87
Issue number6
DOIs
Publication statusPublished - 1 Jun 2016

Fingerprint

Electron sources
Dielectric films
electron sources
Vacuum
electron beams
Plasmas
Silicon
vacuum
plasma pressure
Electron beams
silicon
metals
oxide films
cathodes
Substrates
atmospheres
Oxide films
Cathodes
oxygen
gases

ASJC Scopus subject areas

  • Instrumentation

Cite this

Deposition of dielectric films on silicon using a fore-vacuum plasma electron source. / Zolotukhin, D. B.; Oks, E. M.; Tyunkov, A. V.; Yushkov, Yu G.

In: Review of Scientific Instruments, Vol. 87, No. 6, 063302, 01.06.2016.

Research output: Contribution to journalArticle

@article{d73f16c677294be4ae8ac7e9a62cc8b7,
title = "Deposition of dielectric films on silicon using a fore-vacuum plasma electron source",
abstract = "We describe an experiment on the use of a fore-vacuum-pressure, plasma-cathode, electron beam source with current up to 100 mA and beam energy up to 15 keV for deposition of Mg and Al oxide films on Si substrates in an oxygen atmosphere at a pressure of 10 Pa. The metals (Al and Mg) were evaporated and ionized using the electron beam with the formation of a gas-metal beam-plasma. The plasma was deposited on the surface of Si substrates. The elemental composition of the deposited films was analyzed.",
author = "Zolotukhin, {D. B.} and Oks, {E. M.} and Tyunkov, {A. V.} and Yushkov, {Yu G.}",
year = "2016",
month = "6",
day = "1",
doi = "10.1063/1.4953112",
language = "English",
volume = "87",
journal = "Review of Scientific Instruments",
issn = "0034-6748",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

TY - JOUR

T1 - Deposition of dielectric films on silicon using a fore-vacuum plasma electron source

AU - Zolotukhin, D. B.

AU - Oks, E. M.

AU - Tyunkov, A. V.

AU - Yushkov, Yu G.

PY - 2016/6/1

Y1 - 2016/6/1

N2 - We describe an experiment on the use of a fore-vacuum-pressure, plasma-cathode, electron beam source with current up to 100 mA and beam energy up to 15 keV for deposition of Mg and Al oxide films on Si substrates in an oxygen atmosphere at a pressure of 10 Pa. The metals (Al and Mg) were evaporated and ionized using the electron beam with the formation of a gas-metal beam-plasma. The plasma was deposited on the surface of Si substrates. The elemental composition of the deposited films was analyzed.

AB - We describe an experiment on the use of a fore-vacuum-pressure, plasma-cathode, electron beam source with current up to 100 mA and beam energy up to 15 keV for deposition of Mg and Al oxide films on Si substrates in an oxygen atmosphere at a pressure of 10 Pa. The metals (Al and Mg) were evaporated and ionized using the electron beam with the formation of a gas-metal beam-plasma. The plasma was deposited on the surface of Si substrates. The elemental composition of the deposited films was analyzed.

UR - http://www.scopus.com/inward/record.url?scp=84974603599&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84974603599&partnerID=8YFLogxK

U2 - 10.1063/1.4953112

DO - 10.1063/1.4953112

M3 - Article

VL - 87

JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

SN - 0034-6748

IS - 6

M1 - 063302

ER -