Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions

M. Bouarroudj, Z. Khatir, J. P. Ousten, F. Badel, L. Dupont, S. Lefebvre

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

One challenge for automotive hybrid traction application is the use of high power IGBT modules that can withstand high ambient temperatures, from 90 °C to 120 °C, for reliability purpose. The paper presents ageing tests of 600 V-200 A IGBT modules subjected to power cycling with 60 °C junction temperature swings at 90 °C ambient temperature. Failure modes are described and obtained results on the module characteristics are detailed. Especially, physical degradations are described not only at the package level, like solder attach delaminations, but also at the chip level, with a shift on electrical characteristics such as threshold voltage. Finally, numerical investigations are performed in order to assess the thermal and thermo-mechanical constraints on silicon dies during power cycling and also to estimate the effect of ambient temperature on the mechanical stresses.

Original languageEnglish
Pages (from-to)1719-1724
Number of pages6
JournalMicroelectronics Reliability
Volume47
Issue number9-11 SPEC. ISS.
DOIs
Publication statusPublished - 1 Aug 2007
Externally publishedYes

Fingerprint

high temperature environments
Insulated gate bipolar transistors (IGBT)
ambient temperature
modules
degradation
Degradation
cycles
traction
failure modes
solders
threshold voltage
Temperature
temperature
Silicon
Threshold voltage
chips
Delamination
Soldering alloys
Failure modes
Aging of materials

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions. / Bouarroudj, M.; Khatir, Z.; Ousten, J. P.; Badel, F.; Dupont, L.; Lefebvre, S.

In: Microelectronics Reliability, Vol. 47, No. 9-11 SPEC. ISS., 01.08.2007, p. 1719-1724.

Research output: Contribution to journalArticle

Bouarroudj, M. ; Khatir, Z. ; Ousten, J. P. ; Badel, F. ; Dupont, L. ; Lefebvre, S. / Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions. In: Microelectronics Reliability. 2007 ; Vol. 47, No. 9-11 SPEC. ISS. pp. 1719-1724.
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