Abstract
The angular distributions of photons produced by 900 MeV electrons channeled along the 〈111〉 axis of a silicon crystal were measured. A broadening of the angular distributions was observed in a bent crystal with radius R = 76 cm, which was caused most probably by the deflection of the channeled electron beam.
| Original language | English |
|---|---|
| Pages (from-to) | 263-265 |
| Number of pages | 3 |
| Journal | Physics Letters A |
| Volume | 77 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 26 May 1980 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Adishchev, Y. N., Ananyin, P. S., Didenko, A. N., Kalinin, B. N., Kaplin, V. V., Rozum, E. I., Potylitsyn, A. P., Vorobiev, S. A., & Zabaev, V. N. (1980). Deflection of a γ-radiation beam produced by 900 MeV channeled electrons in a bent crystal. Physics Letters A, 77(4), 263-265. https://doi.org/10.1016/0375-9601(80)90663-5