Deflection of a γ-radiation beam produced by 900 MeV channeled electrons in a bent crystal

Yu N. Adishchev, P. S. Ananyin, A. N. Didenko, B. N. Kalinin, V. V. Kaplin, E. I. Rozum, A. P. Potylitsyn, S. A. Vorobiev, V. N. Zabaev

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Abstract

The angular distributions of photons produced by 900 MeV electrons channeled along the 〈111〉 axis of a silicon crystal were measured. A broadening of the angular distributions was observed in a bent crystal with radius R = 76 cm, which was caused most probably by the deflection of the channeled electron beam.

Original language	English
Pages (from-to)	263-265
Number of pages	3
Journal	Physics Letters A
Volume	77
Issue number	4
DOIs	https://doi.org/10.1016/0375-9601(80)90663-5
Publication status	Published - 26 May 1980

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1016/0375-9601(80)90663-5

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Deflection of a γ-radiation beam produced by 900 MeV channeled electrons in a bent crystal. / Adishchev, Yu N.; Ananyin, P. S.; Didenko, A. N.; Kalinin, B. N.; Kaplin, V. V.; Rozum, E. I.; Potylitsyn, A. P.; Vorobiev, S. A.; Zabaev, V. N.

In: Physics Letters A, Vol. 77, No. 4, 26.05.1980, p. 263-265.

Research output: Contribution to journal › Article › peer-review

@article{5e1ea5f6c9354ec2b33200c27719ca80,

title = "Deflection of a γ-radiation beam produced by 900 MeV channeled electrons in a bent crystal",

abstract = "The angular distributions of photons produced by 900 MeV electrons channeled along the 〈111〉 axis of a silicon crystal were measured. A broadening of the angular distributions was observed in a bent crystal with radius R = 76 cm, which was caused most probably by the deflection of the channeled electron beam.",

author = "Adishchev, {Yu N.} and Ananyin, {P. S.} and Didenko, {A. N.} and Kalinin, {B. N.} and Kaplin, {V. V.} and Rozum, {E. I.} and Potylitsyn, {A. P.} and Vorobiev, {S. A.} and Zabaev, {V. N.}",

year = "1980",

month = may,

day = "26",

doi = "10.1016/0375-9601(80)90663-5",

language = "English",

volume = "77",

pages = "263--265",

journal = "Physics Letters, Section A: General, Atomic and Solid State Physics",

issn = "0375-9601",

publisher = "Elsevier",

number = "4",

}

TY - JOUR

T1 - Deflection of a γ-radiation beam produced by 900 MeV channeled electrons in a bent crystal

AU - Adishchev, Yu N.

AU - Ananyin, P. S.

AU - Didenko, A. N.

AU - Kalinin, B. N.

AU - Kaplin, V. V.

AU - Rozum, E. I.

AU - Potylitsyn, A. P.

AU - Vorobiev, S. A.

AU - Zabaev, V. N.

PY - 1980/5/26

Y1 - 1980/5/26

N2 - The angular distributions of photons produced by 900 MeV electrons channeled along the 〈111〉 axis of a silicon crystal were measured. A broadening of the angular distributions was observed in a bent crystal with radius R = 76 cm, which was caused most probably by the deflection of the channeled electron beam.

AB - The angular distributions of photons produced by 900 MeV electrons channeled along the 〈111〉 axis of a silicon crystal were measured. A broadening of the angular distributions was observed in a bent crystal with radius R = 76 cm, which was caused most probably by the deflection of the channeled electron beam.

UR - http://www.scopus.com/inward/record.url?scp=49149147364&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=49149147364&partnerID=8YFLogxK

U2 - 10.1016/0375-9601(80)90663-5

DO - 10.1016/0375-9601(80)90663-5

M3 - Article

AN - SCOPUS:49149147364

VL - 77

SP - 263

EP - 265

JO - Physics Letters, Section A: General, Atomic and Solid State Physics

JF - Physics Letters, Section A: General, Atomic and Solid State Physics

SN - 0375-9601

IS - 4

ER -

Deflection of a γ-radiation beam produced by 900 MeV channeled electrons in a bent crystal

Abstract

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