Abstract
The results of metal ion implantation into alumina ceramic are presented. We show that the of ceramic surface resistivity depends on the metal ion spcies used for the implantation, and decreases with increasing metal ion implantation dose, decreasing by 3-4 orders of magnitude from 1012 Ohm/sq. This approach provides an effective tool for bleeding off accumulated surface charge of ceramic components that can result from interaction with charged particles flows or dielectric polarization. The method can be applied for increasing the maximum electric field hold-off of insulating surfaces in high-voltage devices.
| Original language | English |
|---|---|
| Title of host publication | Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV |
| Pages | 554-557 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 2012 |
| Event | 25th International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV 2012 - Tomsk, Russian Federation Duration: 2 Sep 2012 → 7 Sep 2012 |
Other
| Other | 25th International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV 2012 |
|---|---|
| Country | Russian Federation |
| City | Tomsk |
| Period | 2.9.12 → 7.9.12 |
ASJC Scopus subject areas
- Computer Networks and Communications
- Software
Fingerprint Dive into the research topics of 'Decrease of ceramic surface resistance by implantation using a vacuum arc metal ion source'. Together they form a unique fingerprint.
Cite this
Savkin, K. P., Bugaev, A. S., Nikolaev, A. G., Oks, E. M., Kurzina, I. A., Shandrikov, M. V., Yushkov, G. Y., & Brown, I. G. (2012). Decrease of ceramic surface resistance by implantation using a vacuum arc metal ion source. In Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV (pp. 554-557). [6412579] https://doi.org/10.1109/DEIV.2012.6412579