Abstract
The results of metal ion implantation into alumina ceramic are presented. We show that the of ceramic surface resistivity depends on the metal ion spcies used for the implantation, and decreases with increasing metal ion implantation dose, decreasing by 3-4 orders of magnitude from 1012 Ohm/sq. This approach provides an effective tool for bleeding off accumulated surface charge of ceramic components that can result from interaction with charged particles flows or dielectric polarization. The method can be applied for increasing the maximum electric field hold-off of insulating surfaces in high-voltage devices.
| Original language | English |
|---|---|
| Title of host publication | Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV |
| Pages | 554-557 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 2012 |
| Event | 25th International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV 2012 - Tomsk, Russian Federation Duration: 2 Sep 2012 → 7 Sep 2012 |
Other
| Other | 25th International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV 2012 |
|---|---|
| Country | Russian Federation |
| City | Tomsk |
| Period | 2.9.12 → 7.9.12 |
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ASJC Scopus subject areas
- Computer Networks and Communications
- Software
Cite this
Decrease of ceramic surface resistance by implantation using a vacuum arc metal ion source. / Savkin, K. P.; Bugaev, A. S.; Nikolaev, A. G.; Oks, E. M.; Kurzina, I. A.; Shandrikov, M. V.; Yushkov, G. Yu; Brown, I. G.
Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV. 2012. p. 554-557 6412579.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Decrease of ceramic surface resistance by implantation using a vacuum arc metal ion source
AU - Savkin, K. P.
AU - Bugaev, A. S.
AU - Nikolaev, A. G.
AU - Oks, E. M.
AU - Kurzina, I. A.
AU - Shandrikov, M. V.
AU - Yushkov, G. Yu
AU - Brown, I. G.
PY - 2012
Y1 - 2012
N2 - The results of metal ion implantation into alumina ceramic are presented. We show that the of ceramic surface resistivity depends on the metal ion spcies used for the implantation, and decreases with increasing metal ion implantation dose, decreasing by 3-4 orders of magnitude from 1012 Ohm/sq. This approach provides an effective tool for bleeding off accumulated surface charge of ceramic components that can result from interaction with charged particles flows or dielectric polarization. The method can be applied for increasing the maximum electric field hold-off of insulating surfaces in high-voltage devices.
AB - The results of metal ion implantation into alumina ceramic are presented. We show that the of ceramic surface resistivity depends on the metal ion spcies used for the implantation, and decreases with increasing metal ion implantation dose, decreasing by 3-4 orders of magnitude from 1012 Ohm/sq. This approach provides an effective tool for bleeding off accumulated surface charge of ceramic components that can result from interaction with charged particles flows or dielectric polarization. The method can be applied for increasing the maximum electric field hold-off of insulating surfaces in high-voltage devices.
UR - http://www.scopus.com/inward/record.url?scp=84873948108&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84873948108&partnerID=8YFLogxK
U2 - 10.1109/DEIV.2012.6412579
DO - 10.1109/DEIV.2012.6412579
M3 - Conference contribution
SN - 9781467312660
SP - 554
EP - 557
BT - Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV
ER -