Decrease of ceramic surface resistance by implantation using a vacuum arc metal ion source

K. P. Savkin, A. S. Bugaev, A. G. Nikolaev, E. M. Oks, I. A. Kurzina, M. V. Shandrikov, G. Yu Yushkov, I. G. Brown

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    The results of metal ion implantation into alumina ceramic are presented. We show that the of ceramic surface resistivity depends on the metal ion spcies used for the implantation, and decreases with increasing metal ion implantation dose, decreasing by 3-4 orders of magnitude from 1012 Ohm/sq. This approach provides an effective tool for bleeding off accumulated surface charge of ceramic components that can result from interaction with charged particles flows or dielectric polarization. The method can be applied for increasing the maximum electric field hold-off of insulating surfaces in high-voltage devices.

    Original languageEnglish
    Title of host publicationProceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV
    Pages554-557
    Number of pages4
    DOIs
    Publication statusPublished - 2012
    Event25th International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV 2012 - Tomsk, Russian Federation
    Duration: 2 Sep 20127 Sep 2012

    Other

    Other25th International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV 2012
    CountryRussian Federation
    CityTomsk
    Period2.9.127.9.12

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    ASJC Scopus subject areas

    • Computer Networks and Communications
    • Software

    Cite this

    Savkin, K. P., Bugaev, A. S., Nikolaev, A. G., Oks, E. M., Kurzina, I. A., Shandrikov, M. V., ... Brown, I. G. (2012). Decrease of ceramic surface resistance by implantation using a vacuum arc metal ion source. In Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV (pp. 554-557). [6412579] https://doi.org/10.1109/DEIV.2012.6412579