Decrease of ceramic surface resistance by implantation using a vacuum arc metal ion source

Abstract

The results of metal ion implantation into alumina ceramic are presented. We show that the of ceramic surface resistivity depends on the metal ion spcies used for the implantation, and decreases with increasing metal ion implantation dose, decreasing by 3-4 orders of magnitude from 10¹² Ohm/sq. This approach provides an effective tool for bleeding off accumulated surface charge of ceramic components that can result from interaction with charged particles flows or dielectric polarization. The method can be applied for increasing the maximum electric field hold-off of insulating surfaces in high-voltage devices.

Original language	English
Title of host publication	Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV
Pages	554-557
Number of pages	4
DOIs	https://doi.org/10.1109/DEIV.2012.6412579
Publication status	Published - 2012
Event	25th International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV 2012 - Tomsk, Russian Federation Duration: 2 Sep 2012 → 7 Sep 2012

Other

Other	25th International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV 2012
Country	Russian Federation
City	Tomsk
Period	2.9.12 → 7.9.12

ASJC Scopus subject areas

Computer Networks and Communications
Software

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10.1109/DEIV.2012.6412579

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Savkin, K. P., Bugaev, A. S., Nikolaev, A. G., Oks, E. M., Kurzina, I. A., Shandrikov, M. V., Yushkov, G. Y., & Brown, I. G. (2012). Decrease of ceramic surface resistance by implantation using a vacuum arc metal ion source. In Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV (pp. 554-557). [6412579] https://doi.org/10.1109/DEIV.2012.6412579

Decrease of ceramic surface resistance by implantation using a vacuum arc metal ion source. / Savkin, K. P.; Bugaev, A. S.; Nikolaev, A. G.; Oks, E. M.; Kurzina, I. A.; Shandrikov, M. V.; Yushkov, G. Yu; Brown, I. G.

Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV. 2012. p. 554-557 6412579.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Savkin, KP, Bugaev, AS, Nikolaev, AG, Oks, EM, Kurzina, IA, Shandrikov, MV, Yushkov, GY & Brown, IG 2012, Decrease of ceramic surface resistance by implantation using a vacuum arc metal ion source. in Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV., 6412579, pp. 554-557, 25th International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV 2012, Tomsk, Russian Federation, 2.9.12. https://doi.org/10.1109/DEIV.2012.6412579

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abstract = "The results of metal ion implantation into alumina ceramic are presented. We show that the of ceramic surface resistivity depends on the metal ion spcies used for the implantation, and decreases with increasing metal ion implantation dose, decreasing by 3-4 orders of magnitude from 1012 Ohm/sq. This approach provides an effective tool for bleeding off accumulated surface charge of ceramic components that can result from interaction with charged particles flows or dielectric polarization. The method can be applied for increasing the maximum electric field hold-off of insulating surfaces in high-voltage devices.",

author = "Savkin, {K. P.} and Bugaev, {A. S.} and Nikolaev, {A. G.} and Oks, {E. M.} and Kurzina, {I. A.} and Shandrikov, {M. V.} and Yushkov, {G. Yu} and Brown, {I. G.}",

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AU - Bugaev, A. S.

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AU - Kurzina, I. A.

AU - Shandrikov, M. V.

AU - Yushkov, G. Yu

AU - Brown, I. G.

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AB - The results of metal ion implantation into alumina ceramic are presented. We show that the of ceramic surface resistivity depends on the metal ion spcies used for the implantation, and decreases with increasing metal ion implantation dose, decreasing by 3-4 orders of magnitude from 1012 Ohm/sq. This approach provides an effective tool for bleeding off accumulated surface charge of ceramic components that can result from interaction with charged particles flows or dielectric polarization. The method can be applied for increasing the maximum electric field hold-off of insulating surfaces in high-voltage devices.

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BT - Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV

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