Abstract
Data presented on the influence of the temperature in the range 80-650 K on the spectral kinetics of the luminescence and transient absorption of unactivated CsI crystals under irradiation by pulsed electron beams (〈E〉 = 0.25 MeV, t1/2 = 15 ns, j = 20 A/cm2). The structure of the short-wavelength part of the transient absorption spectra at T = 80- 350 K exhibits features, suggesting that the nuclear subsystem of self-trapped excitons (STE's) transforms repeatedly during their lifetime until their radiative annihilation at T≥ 80 K, alternately occupying di- and trihalide ionic configurations. It is established that a temperature-induced increase in the yield of radiation defects, as well as F and H color centers, and quenching of the UV luminescence in CsI occur in the same temperature region (above 350 K) and are characterized by identical thermal activation energies (∼0.22 eV). It is postulated that the STE's in a CsI crystal can have a trihalide ionic core with either an on-center or off-center configuration; the high-temperature luminescence of CsI crystals is associated with the radiative annihilation of an off-center STE with the structure (I-(I0I- e-))*.
| Original language | English |
|---|---|
| Pages (from-to) | 586-590 |
| Number of pages | 5 |
| Journal | Physics of the Solid State |
| Volume | 40 |
| Issue number | 4 |
| Publication status | Published - Apr 1998 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Creation of excitons and defects in a CsI crystal during pulsed electron irradiation. / Gafiatulina, E. S.; Chernov, S. A.; Yakovlev, V. Yu.
In: Physics of the Solid State, Vol. 40, No. 4, 04.1998, p. 586-590.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Creation of excitons and defects in a CsI crystal during pulsed electron irradiation
AU - Gafiatulina, E. S.
AU - Chernov, S. A.
AU - Yakovlev, V. Yu
PY - 1998/4
Y1 - 1998/4
N2 - Data presented on the influence of the temperature in the range 80-650 K on the spectral kinetics of the luminescence and transient absorption of unactivated CsI crystals under irradiation by pulsed electron beams (〈E〉 = 0.25 MeV, t1/2 = 15 ns, j = 20 A/cm2). The structure of the short-wavelength part of the transient absorption spectra at T = 80- 350 K exhibits features, suggesting that the nuclear subsystem of self-trapped excitons (STE's) transforms repeatedly during their lifetime until their radiative annihilation at T≥ 80 K, alternately occupying di- and trihalide ionic configurations. It is established that a temperature-induced increase in the yield of radiation defects, as well as F and H color centers, and quenching of the UV luminescence in CsI occur in the same temperature region (above 350 K) and are characterized by identical thermal activation energies (∼0.22 eV). It is postulated that the STE's in a CsI crystal can have a trihalide ionic core with either an on-center or off-center configuration; the high-temperature luminescence of CsI crystals is associated with the radiative annihilation of an off-center STE with the structure (I-(I0I- e-))*.
AB - Data presented on the influence of the temperature in the range 80-650 K on the spectral kinetics of the luminescence and transient absorption of unactivated CsI crystals under irradiation by pulsed electron beams (〈E〉 = 0.25 MeV, t1/2 = 15 ns, j = 20 A/cm2). The structure of the short-wavelength part of the transient absorption spectra at T = 80- 350 K exhibits features, suggesting that the nuclear subsystem of self-trapped excitons (STE's) transforms repeatedly during their lifetime until their radiative annihilation at T≥ 80 K, alternately occupying di- and trihalide ionic configurations. It is established that a temperature-induced increase in the yield of radiation defects, as well as F and H color centers, and quenching of the UV luminescence in CsI occur in the same temperature region (above 350 K) and are characterized by identical thermal activation energies (∼0.22 eV). It is postulated that the STE's in a CsI crystal can have a trihalide ionic core with either an on-center or off-center configuration; the high-temperature luminescence of CsI crystals is associated with the radiative annihilation of an off-center STE with the structure (I-(I0I- e-))*.
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M3 - Article
VL - 40
SP - 586
EP - 590
JO - Physics of the Solid State
JF - Physics of the Solid State
SN - 1063-7834
IS - 4
ER -