Creation of excitons and defects in a CsI crystal during pulsed electron irradiation

E. S. Gafiatulina, S. A. Chernov, V. Yu Yakovlev

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Data presented on the influence of the temperature in the range 80-650 K on the spectral kinetics of the luminescence and transient absorption of unactivated CsI crystals under irradiation by pulsed electron beams (〈E〉 = 0.25 MeV, t1/2 = 15 ns, j = 20 A/cm2). The structure of the short-wavelength part of the transient absorption spectra at T = 80- 350 K exhibits features, suggesting that the nuclear subsystem of self-trapped excitons (STE's) transforms repeatedly during their lifetime until their radiative annihilation at T≥ 80 K, alternately occupying di- and trihalide ionic configurations. It is established that a temperature-induced increase in the yield of radiation defects, as well as F and H color centers, and quenching of the UV luminescence in CsI occur in the same temperature region (above 350 K) and are characterized by identical thermal activation energies (∼0.22 eV). It is postulated that the STE's in a CsI crystal can have a trihalide ionic core with either an on-center or off-center configuration; the high-temperature luminescence of CsI crystals is associated with the radiative annihilation of an off-center STE with the structure (I-(I0I- e-))*.

Original languageEnglish
Pages (from-to)586-590
Number of pages5
JournalPhysics of the Solid State
Volume40
Issue number4
Publication statusPublished - Apr 1998

Fingerprint

Electron irradiation
electron irradiation
Excitons
excitons
luminescence
Luminescence
Defects
Crystals
defects
crystals
configurations
color centers
Color centers
Temperature
temperature
quenching
electron beams
activation energy
absorption spectra
Absorption spectra

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Creation of excitons and defects in a CsI crystal during pulsed electron irradiation. / Gafiatulina, E. S.; Chernov, S. A.; Yakovlev, V. Yu.

In: Physics of the Solid State, Vol. 40, No. 4, 04.1998, p. 586-590.

Research output: Contribution to journalArticle

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AB - Data presented on the influence of the temperature in the range 80-650 K on the spectral kinetics of the luminescence and transient absorption of unactivated CsI crystals under irradiation by pulsed electron beams (〈E〉 = 0.25 MeV, t1/2 = 15 ns, j = 20 A/cm2). The structure of the short-wavelength part of the transient absorption spectra at T = 80- 350 K exhibits features, suggesting that the nuclear subsystem of self-trapped excitons (STE's) transforms repeatedly during their lifetime until their radiative annihilation at T≥ 80 K, alternately occupying di- and trihalide ionic configurations. It is established that a temperature-induced increase in the yield of radiation defects, as well as F and H color centers, and quenching of the UV luminescence in CsI occur in the same temperature region (above 350 K) and are characterized by identical thermal activation energies (∼0.22 eV). It is postulated that the STE's in a CsI crystal can have a trihalide ionic core with either an on-center or off-center configuration; the high-temperature luminescence of CsI crystals is associated with the radiative annihilation of an off-center STE with the structure (I-(I0I- e-))*.

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