TY - GEN
T1 - Creation of excitations and defects in insulating materials by high-current-density electron beams of nanosecond pulse duration
AU - Vaisburd, D. I.
AU - Evdokimov, K. E.
PY - 2005
Y1 - 2005
N2 - The paper is concerned with fast and ultra-fast processes in insulating materials under the irradiation by a high-current-density electron beam of a nanosecond pulse duration. The inflation process induced by the interaction of a high-intensity electron beam with a dielectric is examined. The "instantaneous" distribution of non-ionizing electrons and holes is one of the most important stages of the process. Ionization-passive electrons and holes make the main contribution to many fast processes with a characteristic time in the range 10
-14 ÷ 10
-12 s: high-energy conductivity, intraband luminescence, etc. A technique was developed for calculation of the "instantaneous" distribution of non-ionizing electrons and holes in a dielectric prior to electron-phonon relaxation. The following experimental effects are considered: intraband luminescence, coexistence of intraband electron luminescence and band-to-band hole luminescence in CsI, high energy conductivity; generation of mechanical fields and their interaction with cracks and dislocations.
AB - The paper is concerned with fast and ultra-fast processes in insulating materials under the irradiation by a high-current-density electron beam of a nanosecond pulse duration. The inflation process induced by the interaction of a high-intensity electron beam with a dielectric is examined. The "instantaneous" distribution of non-ionizing electrons and holes is one of the most important stages of the process. Ionization-passive electrons and holes make the main contribution to many fast processes with a characteristic time in the range 10
-14 ÷ 10
-12 s: high-energy conductivity, intraband luminescence, etc. A technique was developed for calculation of the "instantaneous" distribution of non-ionizing electrons and holes in a dielectric prior to electron-phonon relaxation. The following experimental effects are considered: intraband luminescence, coexistence of intraband electron luminescence and band-to-band hole luminescence in CsI, high energy conductivity; generation of mechanical fields and their interaction with cracks and dislocations.
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U2 - 10.1002/pssc.200460149
DO - 10.1002/pssc.200460149
M3 - Conference contribution
AN - SCOPUS:27344460855
VL - 2
SP - 216
EP - 222
BT - Physica Status Solidi C: Conferences
ER -