Copper oxide atomic layer deposition on thermally pretreated multi-walled carbon nanotubes for interconnect applications

Marcel Melzer, Thomas Waechtler, Steve Mul̈ler, Holger Fiedler, Sascha Hermann, Raul D. Rodriguez, Alexander Villabona, Andrea Sendzik, Robert Mothes, Stefan E. Schulz, Dietrich R.T. Zahn, Michael Hietschold, Heinrich Lang, Thomas Gessner

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Carbon nanotubes (CNTs) are a highly promising material for future interconnects. It is expected that a decoration of the CNTs with Cu particles or also the filling of the interspaces between the CNTs with Cu can enhance the performance of CNT-based interconnects. The current work is therefore considered with thermal atomic layer deposition (ALD) of CuxO from the liquid Cu(I) β-diketonate precursor [(nBu3P) 2Cu(acac)] and wet oxygen at 135°C. This paper focuses on different thermal in situ pretreatments of the CNTs with O2, H 2O and wet O2 at temperatures up to 300°C prior to the ALD process. Analyses by transmission electron microscopy show that in most cases the CuxO forms particles on the multi-walled CNTs (MWCNTs). This behavior can be explained by the low affinity of Cu to form carbides. Nevertheless, also the formation of areas with rather layer-like growth was observed in case of an oxidation with wet O2 at 300°C. This growth mode indicates the partial destruction of the MWCNT surface. However, the damages introduced into the MWCNTs during the pre-treatment are too low to be detected by Raman spectroscopy.

Original languageEnglish
Pages (from-to)223-228
Number of pages6
JournalMicroelectronic Engineering
Volume107
DOIs
Publication statusPublished - 1 Jan 2013
Externally publishedYes

Fingerprint

Carbon Nanotubes
Copper oxides
Atomic layer deposition
copper oxides
atomic layer epitaxy
Carbon nanotubes
carbon nanotubes
pretreatment
Carbides
Raman spectroscopy
carbides
Oxygen
Transmission electron microscopy
destruction
affinity
Oxidation
Liquids
damage
transmission electron microscopy
oxidation

Keywords

  • Atomic layer deposition (ALD)
  • Carbon nanotubes (CNT)
  • Copper
  • Copper oxide
  • Interconnect
  • Thermal oxidation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Copper oxide atomic layer deposition on thermally pretreated multi-walled carbon nanotubes for interconnect applications. / Melzer, Marcel; Waechtler, Thomas; Mul̈ler, Steve; Fiedler, Holger; Hermann, Sascha; Rodriguez, Raul D.; Villabona, Alexander; Sendzik, Andrea; Mothes, Robert; Schulz, Stefan E.; Zahn, Dietrich R.T.; Hietschold, Michael; Lang, Heinrich; Gessner, Thomas.

In: Microelectronic Engineering, Vol. 107, 01.01.2013, p. 223-228.

Research output: Contribution to journalArticle

Melzer, M, Waechtler, T, Mul̈ler, S, Fiedler, H, Hermann, S, Rodriguez, RD, Villabona, A, Sendzik, A, Mothes, R, Schulz, SE, Zahn, DRT, Hietschold, M, Lang, H & Gessner, T 2013, 'Copper oxide atomic layer deposition on thermally pretreated multi-walled carbon nanotubes for interconnect applications', Microelectronic Engineering, vol. 107, pp. 223-228. https://doi.org/10.1016/j.mee.2012.10.026
Melzer, Marcel ; Waechtler, Thomas ; Mul̈ler, Steve ; Fiedler, Holger ; Hermann, Sascha ; Rodriguez, Raul D. ; Villabona, Alexander ; Sendzik, Andrea ; Mothes, Robert ; Schulz, Stefan E. ; Zahn, Dietrich R.T. ; Hietschold, Michael ; Lang, Heinrich ; Gessner, Thomas. / Copper oxide atomic layer deposition on thermally pretreated multi-walled carbon nanotubes for interconnect applications. In: Microelectronic Engineering. 2013 ; Vol. 107. pp. 223-228.
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