Abstract
The article reports on the contamination of Ag thin films sputtered from a pure Ag target in Ar and Ne gas by the RF magnetron by gas atoms contained in residual gas atmosphere in the deposition chamber at different values of the base pressure. The amount of O atoms generated at different values of base pressure is compared with the amount of Ag atoms sputtered at different deposition rates of Ag film. This comparison reveals a great problem in the formation of pure metallic films at low deposition rates and high values of the base pressure. No pure Ag films can be deposited at low in deposition chambers evacuated with diffusion or root pumps to the base pressures lower than 1mPa only.
| Original language | English |
|---|---|
| Pages (from-to) | 416-421 |
| Number of pages | 6 |
| Journal | Plasma Processes and Polymers |
| Volume | 12 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 1 May 2015 |
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Keywords
- Contamination
- Low-pressure discharges
- Magnetron
- Metallic films
- Sputtering
ASJC Scopus subject areas
- Condensed Matter Physics
- Polymers and Plastics
Cite this
Contamination of magnetron sputtered metallic films by oxygen from residual atmosphere in deposition chamber. / Pokorný, Petr; Musil, Jindřich; Fitl, Přemysl; Novotný, Michal; Lančok, Jan; Bulíř, Jiří.
In: Plasma Processes and Polymers, Vol. 12, No. 5, 01.05.2015, p. 416-421.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Contamination of magnetron sputtered metallic films by oxygen from residual atmosphere in deposition chamber
AU - Pokorný, Petr
AU - Musil, Jindřich
AU - Fitl, Přemysl
AU - Novotný, Michal
AU - Lančok, Jan
AU - Bulíř, Jiří
PY - 2015/5/1
Y1 - 2015/5/1
N2 - The article reports on the contamination of Ag thin films sputtered from a pure Ag target in Ar and Ne gas by the RF magnetron by gas atoms contained in residual gas atmosphere in the deposition chamber at different values of the base pressure. The amount of O atoms generated at different values of base pressure is compared with the amount of Ag atoms sputtered at different deposition rates of Ag film. This comparison reveals a great problem in the formation of pure metallic films at low deposition rates and high values of the base pressure. No pure Ag films can be deposited at low in deposition chambers evacuated with diffusion or root pumps to the base pressures lower than 1mPa only.
AB - The article reports on the contamination of Ag thin films sputtered from a pure Ag target in Ar and Ne gas by the RF magnetron by gas atoms contained in residual gas atmosphere in the deposition chamber at different values of the base pressure. The amount of O atoms generated at different values of base pressure is compared with the amount of Ag atoms sputtered at different deposition rates of Ag film. This comparison reveals a great problem in the formation of pure metallic films at low deposition rates and high values of the base pressure. No pure Ag films can be deposited at low in deposition chambers evacuated with diffusion or root pumps to the base pressures lower than 1mPa only.
KW - Contamination
KW - Low-pressure discharges
KW - Magnetron
KW - Metallic films
KW - Sputtering
UR - http://www.scopus.com/inward/record.url?scp=84929512249&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84929512249&partnerID=8YFLogxK
U2 - 10.1002/ppap.201400172
DO - 10.1002/ppap.201400172
M3 - Article
AN - SCOPUS:84929512249
VL - 12
SP - 416
EP - 421
JO - Plasma Processes and Polymers
JF - Plasma Processes and Polymers
SN - 1612-8850
IS - 5
ER -