Contamination of magnetron sputtered metallic films by oxygen from residual atmosphere in deposition chamber

Abstract

The article reports on the contamination of Ag thin films sputtered from a pure Ag target in Ar and Ne gas by the RF magnetron by gas atoms contained in residual gas atmosphere in the deposition chamber at different values of the base pressure. The amount of O atoms generated at different values of base pressure is compared with the amount of Ag atoms sputtered at different deposition rates of Ag film. This comparison reveals a great problem in the formation of pure metallic films at low deposition rates and high values of the base pressure. No pure Ag films can be deposited at low in deposition chambers evacuated with diffusion or root pumps to the base pressures lower than 1mPa only.

Original language	English
Pages (from-to)	416-421
Number of pages	6
Journal	Plasma Processes and Polymers
Volume	12
Issue number	5
DOIs	https://doi.org/10.1002/ppap.201400172
Publication status	Published - 1 May 2015

Keywords

Contamination
Low-pressure discharges
Magnetron
Metallic films
Sputtering

ASJC Scopus subject areas

Condensed Matter Physics
Polymers and Plastics

Access to Document

10.1002/ppap.201400172

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title = "Contamination of magnetron sputtered metallic films by oxygen from residual atmosphere in deposition chamber",

abstract = "The article reports on the contamination of Ag thin films sputtered from a pure Ag target in Ar and Ne gas by the RF magnetron by gas atoms contained in residual gas atmosphere in the deposition chamber at different values of the base pressure. The amount of O atoms generated at different values of base pressure is compared with the amount of Ag atoms sputtered at different deposition rates of Ag film. This comparison reveals a great problem in the formation of pure metallic films at low deposition rates and high values of the base pressure. No pure Ag films can be deposited at low in deposition chambers evacuated with diffusion or root pumps to the base pressures lower than 1mPa only.",

keywords = "Contamination, Low-pressure discharges, Magnetron, Metallic films, Sputtering",

author = "Petr Pokorn{\'y} and Jind{\v r}ich Musil and P{\v r}emysl Fitl and Michal Novotn{\'y} and Jan Lan{\v c}ok and Ji{\v r}{\'i} Bul{\'i}{\v r}",

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doi = "10.1002/ppap.201400172",

language = "English",

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journal = "Plasma Processes and Polymers",

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T1 - Contamination of magnetron sputtered metallic films by oxygen from residual atmosphere in deposition chamber

AU - Pokorný, Petr

AU - Musil, Jindřich

AU - Fitl, Přemysl

AU - Novotný, Michal

AU - Lančok, Jan

AU - Bulíř, Jiří

PY - 2015/5/1

Y1 - 2015/5/1

N2 - The article reports on the contamination of Ag thin films sputtered from a pure Ag target in Ar and Ne gas by the RF magnetron by gas atoms contained in residual gas atmosphere in the deposition chamber at different values of the base pressure. The amount of O atoms generated at different values of base pressure is compared with the amount of Ag atoms sputtered at different deposition rates of Ag film. This comparison reveals a great problem in the formation of pure metallic films at low deposition rates and high values of the base pressure. No pure Ag films can be deposited at low in deposition chambers evacuated with diffusion or root pumps to the base pressures lower than 1mPa only.

AB - The article reports on the contamination of Ag thin films sputtered from a pure Ag target in Ar and Ne gas by the RF magnetron by gas atoms contained in residual gas atmosphere in the deposition chamber at different values of the base pressure. The amount of O atoms generated at different values of base pressure is compared with the amount of Ag atoms sputtered at different deposition rates of Ag film. This comparison reveals a great problem in the formation of pure metallic films at low deposition rates and high values of the base pressure. No pure Ag films can be deposited at low in deposition chambers evacuated with diffusion or root pumps to the base pressures lower than 1mPa only.

KW - Contamination

KW - Low-pressure discharges

KW - Magnetron

KW - Metallic films

KW - Sputtering

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