Contactless electromagnetic imaging of power electronic semiconductor devices. Application to the characterization of surface metalizations ageing: Application à la caractérisation du vieillissement des métallisations de surface

Abstract

The ageing of the metallization layer of power semiconductor dies can be a cause of failure. Indeed, this ageing is likely to modify the distribution of the currents flowing within the chip, and cause hot spots. In this study, we evaluate this ageing by two noncontact electromagnetic techniques: the eddy current technique and the inversion of a magnetic flux density cartography. Experimental results show that these methods are promising for the monitoring of the ageing of power semiconductor die metallization.

Translated title of the contribution	Contactless electromagnetic imaging of power electronic semiconductor devices. Application to the characterization of surface metalizations ageing
Original language	French
Pages (from-to)	65-89
Number of pages	25
Journal	Instrumentation Mesure Metrologie
Volume	12
Issue number	1-2
DOIs	https://doi.org/10.3166/I2M.12.1-2.65-89
Publication status	Published - 1 Dec 2012
Externally published	Yes

Keywords

Ageing
Characterization
Eddy current sensors
Hall effet Sensor
Inverse problem
Metallization
Semiconductor power module
Surface current distribution

ASJC Scopus subject areas

Instrumentation
Engineering (miscellaneous)

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10.3166/I2M.12.1-2.65-89

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Imagerie électromagnétique sans contact de composants électroniques de puissance à semi-conducteurs : Application à la caractérisation du vieillissement des métallisations de surface. / Nguyen, Tien Anh; Lefebvre, Stéphane; Joubert, Pierre Yves.

In: Instrumentation Mesure Metrologie, Vol. 12, No. 1-2, 01.12.2012, p. 65-89.

Research output: Contribution to journal › Article › peer-review

@article{2a978eb9b56c43dda14cbab1de069ae0,

title = "Imagerie {\'e}lectromagn{\'e}tique sans contact de composants {\'e}lectroniques de puissance {\`a} semi-conducteurs: Application {\`a} la caract{\'e}risation du vieillissement des m{\'e}tallisations de surface",

abstract = "The ageing of the metallization layer of power semiconductor dies can be a cause of failure. Indeed, this ageing is likely to modify the distribution of the currents flowing within the chip, and cause hot spots. In this study, we evaluate this ageing by two noncontact electromagnetic techniques: the eddy current technique and the inversion of a magnetic flux density cartography. Experimental results show that these methods are promising for the monitoring of the ageing of power semiconductor die metallization.",

keywords = "Ageing, Characterization, Eddy current sensors, Hall effet Sensor, Inverse problem, Metallization, Semiconductor power module, Surface current distribution",

author = "Nguyen, {Tien Anh} and St{\'e}phane Lefebvre and Joubert, {Pierre Yves}",

year = "2012",

month = dec,

day = "1",

doi = "10.3166/I2M.12.1-2.65-89",

language = "Французский",

volume = "12",

pages = "65--89",

journal = "Instrumentation Mesure Metrologie",

issn = "1631-4670",

publisher = "Hermes Science Publishing Ltd",

number = "1-2",

}

TY - JOUR

T1 - Imagerie électromagnétique sans contact de composants électroniques de puissance à semi-conducteurs

T2 - Application à la caractérisation du vieillissement des métallisations de surface

AU - Nguyen, Tien Anh

AU - Lefebvre, Stéphane

AU - Joubert, Pierre Yves

PY - 2012/12/1

Y1 - 2012/12/1

N2 - The ageing of the metallization layer of power semiconductor dies can be a cause of failure. Indeed, this ageing is likely to modify the distribution of the currents flowing within the chip, and cause hot spots. In this study, we evaluate this ageing by two noncontact electromagnetic techniques: the eddy current technique and the inversion of a magnetic flux density cartography. Experimental results show that these methods are promising for the monitoring of the ageing of power semiconductor die metallization.

AB - The ageing of the metallization layer of power semiconductor dies can be a cause of failure. Indeed, this ageing is likely to modify the distribution of the currents flowing within the chip, and cause hot spots. In this study, we evaluate this ageing by two noncontact electromagnetic techniques: the eddy current technique and the inversion of a magnetic flux density cartography. Experimental results show that these methods are promising for the monitoring of the ageing of power semiconductor die metallization.

KW - Ageing

KW - Characterization

KW - Eddy current sensors

KW - Hall effet Sensor

KW - Inverse problem

KW - Metallization

KW - Semiconductor power module

KW - Surface current distribution

UR - http://www.scopus.com/inward/record.url?scp=84875354735&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84875354735&partnerID=8YFLogxK

U2 - 10.3166/I2M.12.1-2.65-89

DO - 10.3166/I2M.12.1-2.65-89

M3 - Статья

AN - SCOPUS:84875354735

VL - 12

SP - 65

EP - 89

JO - Instrumentation Mesure Metrologie

JF - Instrumentation Mesure Metrologie

SN - 1631-4670

IS - 1-2

ER -

Imagerie électromagnétique sans contact de composants électroniques de puissance à semi-conducteurs: Application à la caractérisation du vieillissement des métallisations de surface

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Cite this