Conductivity of MgO-doped LiNbO3 crystals

T. S. Frangulian, V. F. Pichugin, Victor Yurievich Yakovlev, I. W. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Congruent LiNbO3 (LN) and LiNbO3+MgO (MLN) crystals belong to the materials with high initial concentration of antisite defects. These defects are charged positively with respect to the lattice, act as deep electron traps and play very important role in electronic processes. Introduction of MgO-impurity in LiNbO3 change the concentration of these states and alteration in conductivity is expected. The conductivity of samples was studied in relation with MgO content. Information about spectrum of localized states was obtained by optical measurements and method of cathodoluminescence. Observed luminescence has noninertial character and their spectrum shifts to the realm of low energies with grows in MgO content. The data demonstrate essential change in density of states associated with antisite defects. Analysis shows that at low temperature the most probable mechanism of charge-transfer in LN and MLN crystals is hopping of small polarons.

Original languageEnglish
Title of host publicationProceedings - KORUS 2000: 4th Korea-Russia International Symposium on Science and Technology
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages78-83
Number of pages6
Volume1
ISBN (Print)0780364864, 9780780364868
DOIs
Publication statusPublished - 2000
Event4th Korea-Russia International Symposium on Science and Technology, KORUS 2000 - Ulsan, Korea, Republic of
Duration: 27 Jun 20001 Jul 2000

Other

Other4th Korea-Russia International Symposium on Science and Technology, KORUS 2000
CountryKorea, Republic of
CityUlsan
Period27.6.001.7.00

Fingerprint

Defects
Crystals
Polarons
Electron traps
Cathodoluminescence
Crystal lattices
Charge transfer
Luminescence
Impurities
Electrons
Temperature
lithium niobate

Keywords

  • cathodoluminescence
  • charge-transfer
  • crystal
  • defect lattice
  • defects
  • electric conductivity
  • electrons irradiation
  • localized states
  • optical absorption
  • stoichiometry

ASJC Scopus subject areas

  • Clinical Biochemistry
  • Computer Networks and Communications
  • Biotechnology
  • Civil and Structural Engineering
  • Mechanics of Materials
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films

Cite this

Frangulian, T. S., Pichugin, V. F., Yakovlev, V. Y., & Kim, I. W. (2000). Conductivity of MgO-doped LiNbO3 crystals. In Proceedings - KORUS 2000: 4th Korea-Russia International Symposium on Science and Technology (Vol. 1, pp. 78-83). [865926] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/KORUS.2000.865926

Conductivity of MgO-doped LiNbO3 crystals. / Frangulian, T. S.; Pichugin, V. F.; Yakovlev, Victor Yurievich; Kim, I. W.

Proceedings - KORUS 2000: 4th Korea-Russia International Symposium on Science and Technology. Vol. 1 Institute of Electrical and Electronics Engineers Inc., 2000. p. 78-83 865926.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Frangulian, TS, Pichugin, VF, Yakovlev, VY & Kim, IW 2000, Conductivity of MgO-doped LiNbO3 crystals. in Proceedings - KORUS 2000: 4th Korea-Russia International Symposium on Science and Technology. vol. 1, 865926, Institute of Electrical and Electronics Engineers Inc., pp. 78-83, 4th Korea-Russia International Symposium on Science and Technology, KORUS 2000, Ulsan, Korea, Republic of, 27.6.00. https://doi.org/10.1109/KORUS.2000.865926
Frangulian TS, Pichugin VF, Yakovlev VY, Kim IW. Conductivity of MgO-doped LiNbO3 crystals. In Proceedings - KORUS 2000: 4th Korea-Russia International Symposium on Science and Technology. Vol. 1. Institute of Electrical and Electronics Engineers Inc. 2000. p. 78-83. 865926 https://doi.org/10.1109/KORUS.2000.865926
Frangulian, T. S. ; Pichugin, V. F. ; Yakovlev, Victor Yurievich ; Kim, I. W. / Conductivity of MgO-doped LiNbO3 crystals. Proceedings - KORUS 2000: 4th Korea-Russia International Symposium on Science and Technology. Vol. 1 Institute of Electrical and Electronics Engineers Inc., 2000. pp. 78-83
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N2 - Congruent LiNbO3 (LN) and LiNbO3+MgO (MLN) crystals belong to the materials with high initial concentration of antisite defects. These defects are charged positively with respect to the lattice, act as deep electron traps and play very important role in electronic processes. Introduction of MgO-impurity in LiNbO3 change the concentration of these states and alteration in conductivity is expected. The conductivity of samples was studied in relation with MgO content. Information about spectrum of localized states was obtained by optical measurements and method of cathodoluminescence. Observed luminescence has noninertial character and their spectrum shifts to the realm of low energies with grows in MgO content. The data demonstrate essential change in density of states associated with antisite defects. Analysis shows that at low temperature the most probable mechanism of charge-transfer in LN and MLN crystals is hopping of small polarons.

AB - Congruent LiNbO3 (LN) and LiNbO3+MgO (MLN) crystals belong to the materials with high initial concentration of antisite defects. These defects are charged positively with respect to the lattice, act as deep electron traps and play very important role in electronic processes. Introduction of MgO-impurity in LiNbO3 change the concentration of these states and alteration in conductivity is expected. The conductivity of samples was studied in relation with MgO content. Information about spectrum of localized states was obtained by optical measurements and method of cathodoluminescence. Observed luminescence has noninertial character and their spectrum shifts to the realm of low energies with grows in MgO content. The data demonstrate essential change in density of states associated with antisite defects. Analysis shows that at low temperature the most probable mechanism of charge-transfer in LN and MLN crystals is hopping of small polarons.

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