Computer modeling of depth distribution of vacancy nanoclusters in ion-irradiated materials

Natalia A. Voronova, Anatoly I. Kupchishin, Alexander A. Kupchishin, Akmaral A. Kuatbayeva, Tat'yana A. Shmygaleva

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this work, the calculation algorithms of cascade and probability functions and vacancy nanoclusters concentration were developed and their calculations for various incident particles in silicon and iron were made.

Original languageEnglish
Title of host publicationHigh Technology
Subtitle of host publicationResearch and Applications 2017
EditorsGeorgii E. Osokin, Ekaterina A. Kulinich
PublisherTrans Tech Publications Ltd
Pages358-363
Number of pages6
ISBN (Print)9783035712810
DOIs
Publication statusPublished - 1 Jan 2018
Externally publishedYes
Event6th International Conference for Young Scientists High Technology: Research and Applications, HTRA 2017 - Tomsk, Russian Federation
Duration: 27 Nov 201729 Nov 2017

Publication series

NameKey Engineering Materials
Volume769 KEM
ISSN (Print)1013-9826

Conference

Conference6th International Conference for Young Scientists High Technology: Research and Applications, HTRA 2017
CountryRussian Federation
CityTomsk
Period27.11.1729.11.17

Fingerprint

Nanoclusters
Vacancies
Ions
Silicon
Iron

Keywords

  • Algorithm
  • Calculation
  • Cascade and probability function
  • Concentration
  • Ion
  • Modeling
  • Nanoclusters
  • Vacancy clusters

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Voronova, N. A., Kupchishin, A. I., Kupchishin, A. A., Kuatbayeva, A. A., & Shmygaleva, T. A. (2018). Computer modeling of depth distribution of vacancy nanoclusters in ion-irradiated materials. In G. E. Osokin, & E. A. Kulinich (Eds.), High Technology: Research and Applications 2017 (pp. 358-363). (Key Engineering Materials; Vol. 769 KEM). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/KEM.769.358

Computer modeling of depth distribution of vacancy nanoclusters in ion-irradiated materials. / Voronova, Natalia A.; Kupchishin, Anatoly I.; Kupchishin, Alexander A.; Kuatbayeva, Akmaral A.; Shmygaleva, Tat'yana A.

High Technology: Research and Applications 2017. ed. / Georgii E. Osokin; Ekaterina A. Kulinich. Trans Tech Publications Ltd, 2018. p. 358-363 (Key Engineering Materials; Vol. 769 KEM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Voronova, NA, Kupchishin, AI, Kupchishin, AA, Kuatbayeva, AA & Shmygaleva, TA 2018, Computer modeling of depth distribution of vacancy nanoclusters in ion-irradiated materials. in GE Osokin & EA Kulinich (eds), High Technology: Research and Applications 2017. Key Engineering Materials, vol. 769 KEM, Trans Tech Publications Ltd, pp. 358-363, 6th International Conference for Young Scientists High Technology: Research and Applications, HTRA 2017, Tomsk, Russian Federation, 27.11.17. https://doi.org/10.4028/www.scientific.net/KEM.769.358
Voronova NA, Kupchishin AI, Kupchishin AA, Kuatbayeva AA, Shmygaleva TA. Computer modeling of depth distribution of vacancy nanoclusters in ion-irradiated materials. In Osokin GE, Kulinich EA, editors, High Technology: Research and Applications 2017. Trans Tech Publications Ltd. 2018. p. 358-363. (Key Engineering Materials). https://doi.org/10.4028/www.scientific.net/KEM.769.358
Voronova, Natalia A. ; Kupchishin, Anatoly I. ; Kupchishin, Alexander A. ; Kuatbayeva, Akmaral A. ; Shmygaleva, Tat'yana A. / Computer modeling of depth distribution of vacancy nanoclusters in ion-irradiated materials. High Technology: Research and Applications 2017. editor / Georgii E. Osokin ; Ekaterina A. Kulinich. Trans Tech Publications Ltd, 2018. pp. 358-363 (Key Engineering Materials).
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