Comparison study on performances and robustness between SiC MOSFET & JFET devices - Abilities for aeronautics application

D. Othman, M. Berkani, S. Lefebvre, A. Ibrahim, Z. Khatir, A. Bouzourene

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

This paper deals with performances and reliability aspects of MOSFET and JFET power transistors devices based on silicon carbide technology. The purpose of this article is to evaluate the abilities and effects of each technology on the conception of power converter for avionic applications. Experimental measurements of steady-on-state resistance dependence and transient performances with temperature are presented and discussed. The second section focuses mainly on robustness aspects of the two types of power transistors in order to analyze their capability to withstand with aeronautic harsh environmental constrains.

Original languageEnglish
Pages (from-to)1859-1864
Number of pages6
JournalMicroelectronics Reliability
Volume52
Issue number9-10
DOIs
Publication statusPublished - 1 Sep 2012
Externally publishedYes

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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