Comparative Study of Cu Films Prepared by DC, High-Power Pulsed and Burst Magnetron Sputtering

A. A. Solovyev, V. O. Oskirko, V. A. Semenov, K. V. Oskomov, S. V. Rabotkin

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A comparative study of deposition rate, adhesion, structural and electrical properties of nanocrystalline copper thin films deposited using direct current magnetron sputtering (DCMS) and different regimes of high power pulsed magnetron sputtering is presented. High-power impulse magnetron sputtering (HIPIMS) and burst regime (pulse packages) of magnetron sputtering are investigated. The ion and atomic flows toward the growing film during magnetron sputtering of a Cu target are determined. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used to observe the structural characterization of the films. The resistivity of the films was measured using four-point probe technique. In all sputtering regimes, Cu films have mixture crystalline orientations of [111], [200], [311] and [220] in the direction of the film growth. As peak power density in studied deposition regimes was different in order of magnitude (from 15 W/cm2 in DC regime to 3700 W/cm2 in HIPIMS), film properties were also greatly different. DCMS Cu films exhibit a porous columnar grain structure. In contrast, HIPIMS Cu films have a slightly columnar and denser composition. Cu films deposited using burst regimes at peak power density of 415 W cm−2 and ion-to-atom ratio of about 5 have the densest composition and smallest electrical resistance.

Original languageEnglish
Pages (from-to)4052-4060
Number of pages9
JournalJournal of Electronic Materials
Volume45
Issue number8
DOIs
Publication statusPublished - 1 Aug 2016

Fingerprint

Magnetron sputtering
bursts
magnetron sputtering
direct current
impulses
Film growth
radiant flux density
Ions
Acoustic impedance
Crystal microstructure
Deposition rates
Chemical analysis
Crystal orientation
electrical resistance
Sputtering
Structural properties
Copper
Atomic force microscopy
Electric properties
Adhesion

Keywords

  • burst-mode sputtering
  • Cu films
  • high-power impulse magnetron sputtering
  • ion current density
  • ion-to-atom ratio
  • magnetron sputtering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Comparative Study of Cu Films Prepared by DC, High-Power Pulsed and Burst Magnetron Sputtering. / Solovyev, A. A.; Oskirko, V. O.; Semenov, V. A.; Oskomov, K. V.; Rabotkin, S. V.

In: Journal of Electronic Materials, Vol. 45, No. 8, 01.08.2016, p. 4052-4060.

Research output: Contribution to journalArticle

Solovyev, A. A. ; Oskirko, V. O. ; Semenov, V. A. ; Oskomov, K. V. ; Rabotkin, S. V. / Comparative Study of Cu Films Prepared by DC, High-Power Pulsed and Burst Magnetron Sputtering. In: Journal of Electronic Materials. 2016 ; Vol. 45, No. 8. pp. 4052-4060.
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