Color centers and structural damage in LiF induced by 150 MeV Kr ions

Abstract

Color centers and evolution of structure defects were investigated in LiF crystals irradiated at room temperature with 150 MeV ⁸⁴Kr ions with a beam current of 10nA/cm ² in the fluence range 10 ¹¹ - 10 ¹⁴ ions/cm ² at the cyclotron accelerator DC-60 (Astana, Kazakhstan). At the fluence of 10 ¹¹ ions/cm ², SEM imaging revealed mainly formation of etchable ion tracks. Above this fluence, severe structural modifications in the irradiated layer were observed which include the ion-induced formation of dislocations and grains with nano-scale dimensions. The role of fluence in the concentration of electronic color centers and structural modifications is discussed.

Original language	English
Title of host publication	IOP Conference Series: Materials Science and Engineering
Volume	38
Edition	1
DOIs	https://doi.org/10.1088/1757-899X/38/1/012040
Publication status	Published - 2012
Event	International Conference on Functional Materials and Nanotechnologies, FM and NT 2012 - Riga, Latvia Duration: 17 Apr 2012 → 20 Apr 2012

Other

Other	International Conference on Functional Materials and Nanotechnologies, FM and NT 2012
Country	Latvia
City	Riga
Period	17.4.12 → 20.4.12

ASJC Scopus subject areas

Materials Science(all)
Engineering(all)

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10.1088/1757-899X/38/1/012040

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Rusakova, A, Maniks, J, Schwartz, K, Dauletbekova, A, Akilbekov, A, Lisitsin, V & Zdorovets, M 2012, Color centers and structural damage in LiF induced by 150 MeV Kr ions. in IOP Conference Series: Materials Science and Engineering. 1 edn, vol. 38, 012040, International Conference on Functional Materials and Nanotechnologies, FM and NT 2012, Riga, Latvia, 17.4.12. https://doi.org/10.1088/1757-899X/38/1/012040

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title = "Color centers and structural damage in LiF induced by 150 MeV Kr ions",

abstract = "Color centers and evolution of structure defects were investigated in LiF crystals irradiated at room temperature with 150 MeV 84Kr ions with a beam current of 10nA/cm 2 in the fluence range 10 11 - 10 14 ions/cm 2 at the cyclotron accelerator DC-60 (Astana, Kazakhstan). At the fluence of 10 11 ions/cm 2, SEM imaging revealed mainly formation of etchable ion tracks. Above this fluence, severe structural modifications in the irradiated layer were observed which include the ion-induced formation of dislocations and grains with nano-scale dimensions. The role of fluence in the concentration of electronic color centers and structural modifications is discussed.",

author = "A. Rusakova and J. Maniks and K. Schwartz and A. Dauletbekova and A. Akilbekov and V. Lisitsin and M. Zdorovets",

year = "2012",

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T1 - Color centers and structural damage in LiF induced by 150 MeV Kr ions

AU - Rusakova, A.

AU - Maniks, J.

AU - Schwartz, K.

AU - Dauletbekova, A.

AU - Akilbekov, A.

AU - Lisitsin, V.

AU - Zdorovets, M.

PY - 2012

Y1 - 2012

N2 - Color centers and evolution of structure defects were investigated in LiF crystals irradiated at room temperature with 150 MeV 84Kr ions with a beam current of 10nA/cm 2 in the fluence range 10 11 - 10 14 ions/cm 2 at the cyclotron accelerator DC-60 (Astana, Kazakhstan). At the fluence of 10 11 ions/cm 2, SEM imaging revealed mainly formation of etchable ion tracks. Above this fluence, severe structural modifications in the irradiated layer were observed which include the ion-induced formation of dislocations and grains with nano-scale dimensions. The role of fluence in the concentration of electronic color centers and structural modifications is discussed.

AB - Color centers and evolution of structure defects were investigated in LiF crystals irradiated at room temperature with 150 MeV 84Kr ions with a beam current of 10nA/cm 2 in the fluence range 10 11 - 10 14 ions/cm 2 at the cyclotron accelerator DC-60 (Astana, Kazakhstan). At the fluence of 10 11 ions/cm 2, SEM imaging revealed mainly formation of etchable ion tracks. Above this fluence, severe structural modifications in the irradiated layer were observed which include the ion-induced formation of dislocations and grains with nano-scale dimensions. The role of fluence in the concentration of electronic color centers and structural modifications is discussed.

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