Abstract
Color centers and evolution of structure defects were investigated in LiF crystals irradiated at room temperature with 150 MeV 84Kr ions with a beam current of 10nA/cm 2 in the fluence range 10 11 - 10 14 ions/cm 2 at the cyclotron accelerator DC-60 (Astana, Kazakhstan). At the fluence of 10 11 ions/cm 2, SEM imaging revealed mainly formation of etchable ion tracks. Above this fluence, severe structural modifications in the irradiated layer were observed which include the ion-induced formation of dislocations and grains with nano-scale dimensions. The role of fluence in the concentration of electronic color centers and structural modifications is discussed.
Original language | English |
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Title of host publication | IOP Conference Series: Materials Science and Engineering |
Volume | 38 |
Edition | 1 |
DOIs | |
Publication status | Published - 2012 |
Event | International Conference on Functional Materials and Nanotechnologies, FM and NT 2012 - Riga, Latvia Duration: 17 Apr 2012 → 20 Apr 2012 |
Other
Other | International Conference on Functional Materials and Nanotechnologies, FM and NT 2012 |
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Country | Latvia |
City | Riga |
Period | 17.4.12 → 20.4.12 |
ASJC Scopus subject areas
- Materials Science(all)
- Engineering(all)