Abstract
Color centers and evolution of structure defects were investigated in LiF crystals irradiated at room temperature with 150 MeV 84Kr ions with a beam current of 10nA/cm 2 in the fluence range 10 11 - 10 14 ions/cm 2 at the cyclotron accelerator DC-60 (Astana, Kazakhstan). At the fluence of 10 11 ions/cm 2, SEM imaging revealed mainly formation of etchable ion tracks. Above this fluence, severe structural modifications in the irradiated layer were observed which include the ion-induced formation of dislocations and grains with nano-scale dimensions. The role of fluence in the concentration of electronic color centers and structural modifications is discussed.
| Original language | English |
|---|---|
| Title of host publication | IOP Conference Series: Materials Science and Engineering |
| Volume | 38 |
| Edition | 1 |
| DOIs | |
| Publication status | Published - 2012 |
| Event | International Conference on Functional Materials and Nanotechnologies, FM and NT 2012 - Riga, Latvia Duration: 17 Apr 2012 → 20 Apr 2012 |
Other
| Other | International Conference on Functional Materials and Nanotechnologies, FM and NT 2012 |
|---|---|
| Country | Latvia |
| City | Riga |
| Period | 17.4.12 → 20.4.12 |
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ASJC Scopus subject areas
- Materials Science(all)
- Engineering(all)
Cite this
Color centers and structural damage in LiF induced by 150 MeV Kr ions. / Rusakova, A.; Maniks, J.; Schwartz, K.; Dauletbekova, A.; Akilbekov, A.; Lisitsin, V.; Zdorovets, M.
IOP Conference Series: Materials Science and Engineering. Vol. 38 1. ed. 2012. 012040.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Color centers and structural damage in LiF induced by 150 MeV Kr ions
AU - Rusakova, A.
AU - Maniks, J.
AU - Schwartz, K.
AU - Dauletbekova, A.
AU - Akilbekov, A.
AU - Lisitsin, V.
AU - Zdorovets, M.
PY - 2012
Y1 - 2012
N2 - Color centers and evolution of structure defects were investigated in LiF crystals irradiated at room temperature with 150 MeV 84Kr ions with a beam current of 10nA/cm 2 in the fluence range 10 11 - 10 14 ions/cm 2 at the cyclotron accelerator DC-60 (Astana, Kazakhstan). At the fluence of 10 11 ions/cm 2, SEM imaging revealed mainly formation of etchable ion tracks. Above this fluence, severe structural modifications in the irradiated layer were observed which include the ion-induced formation of dislocations and grains with nano-scale dimensions. The role of fluence in the concentration of electronic color centers and structural modifications is discussed.
AB - Color centers and evolution of structure defects were investigated in LiF crystals irradiated at room temperature with 150 MeV 84Kr ions with a beam current of 10nA/cm 2 in the fluence range 10 11 - 10 14 ions/cm 2 at the cyclotron accelerator DC-60 (Astana, Kazakhstan). At the fluence of 10 11 ions/cm 2, SEM imaging revealed mainly formation of etchable ion tracks. Above this fluence, severe structural modifications in the irradiated layer were observed which include the ion-induced formation of dislocations and grains with nano-scale dimensions. The role of fluence in the concentration of electronic color centers and structural modifications is discussed.
UR - http://www.scopus.com/inward/record.url?scp=84874087835&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84874087835&partnerID=8YFLogxK
U2 - 10.1088/1757-899X/38/1/012040
DO - 10.1088/1757-899X/38/1/012040
M3 - Conference contribution
AN - SCOPUS:84874087835
VL - 38
BT - IOP Conference Series: Materials Science and Engineering
ER -