Abstract
A systematic time-resolved plasma diagnostics was carried out in high-power pulsed dc magnetron discharges used for ionized high-rate sputtering of high-quality, highly conductive copper films. The deposition rate of Cu films formed on a grounded substrate at the distance of 100mm from the target was higher than 2μm/min (averaged over a total deposition time) for an average target power loading in a pulse Pda=700W/cm2 (calculated for a total area of the target) at a repetition frequency f = lkHz, a 20% duty cycle and argon pressures p=0.1 and 1 Pa. The flux of sputtered Cu atoms was highly ionized with a strong predominance of Cu+ ions (80-95% after a short initial stage of pulses) in total ion fluxes to the substrate.
| Original language | English |
|---|---|
| Pages (from-to) | 465-469 |
| Number of pages | 5 |
| Journal | Proceedings, Annual Technical Conference - Society of Vacuum Coaters |
| Publication status | Published - 1 Dec 2005 |
| Event | SVC, Society of Vacuum Coaters - 48th Annual Technical Conference - Denver, CO, United States Duration: 23 Apr 2005 → 28 Apr 2005 |
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Keywords
- High-power pulsed magnetron
- High-rate deposition
- Ionized sputtering
- Time-resolved diagnostics
ASJC Scopus subject areas
- Mechanical Engineering
- Surfaces and Interfaces
- Fluid Flow and Transfer Processes
- Surfaces, Coatings and Films
Cite this
Vlcek, J., Pajdarova, A. D., Belsky, P., Lukas, J., Kudlacek, P., & Musil, J. (2005). Characterization of high-power pulsed dc magnetron discharges for ionized high-rate sputtering of copper films. Proceedings, Annual Technical Conference - Society of Vacuum Coaters, 465-469.