Characterization of high-power pulsed dc magnetron discharges for ionized high-rate sputtering of copper films

Abstract

A systematic time-resolved plasma diagnostics was carried out in high-power pulsed dc magnetron discharges used for ionized high-rate sputtering of high-quality, highly conductive copper films. The deposition rate of Cu films formed on a grounded substrate at the distance of 100mm from the target was higher than 2μm/min (averaged over a total deposition time) for an average target power loading in a pulse P_da=700W/cm² (calculated for a total area of the target) at a repetition frequency f = lkHz, a 20% duty cycle and argon pressures p=0.1 and 1 Pa. The flux of sputtered Cu atoms was highly ionized with a strong predominance of Cu⁺ ions (80-95% after a short initial stage of pulses) in total ion fluxes to the substrate.

Original language	English
Pages (from-to)	465-469
Number of pages	5
Journal	Proceedings, Annual Technical Conference - Society of Vacuum Coaters
Publication status	Published - 1 Dec 2005
Event	SVC, Society of Vacuum Coaters - 48th Annual Technical Conference - Denver, CO, United States Duration: 23 Apr 2005 → 28 Apr 2005

Keywords

High-power pulsed magnetron
High-rate deposition
Ionized sputtering
Time-resolved diagnostics

ASJC Scopus subject areas

Mechanical Engineering
Surfaces and Interfaces
Fluid Flow and Transfer Processes
Surfaces, Coatings and Films

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@article{706b27e4923f498ebec32bed081fe32b,

title = "Characterization of high-power pulsed dc magnetron discharges for ionized high-rate sputtering of copper films",

abstract = "A systematic time-resolved plasma diagnostics was carried out in high-power pulsed dc magnetron discharges used for ionized high-rate sputtering of high-quality, highly conductive copper films. The deposition rate of Cu films formed on a grounded substrate at the distance of 100mm from the target was higher than 2μm/min (averaged over a total deposition time) for an average target power loading in a pulse Pda=700W/cm2 (calculated for a total area of the target) at a repetition frequency f = lkHz, a 20% duty cycle and argon pressures p=0.1 and 1 Pa. The flux of sputtered Cu atoms was highly ionized with a strong predominance of Cu+ ions (80-95% after a short initial stage of pulses) in total ion fluxes to the substrate.",

keywords = "High-power pulsed magnetron, High-rate deposition, Ionized sputtering, Time-resolved diagnostics",

author = "J. Vlcek and Pajdarova, {A. D.} and P. Belsky and J. Lukas and P. Kudlacek and J. Musil",

year = "2005",

month = dec,

day = "1",

language = "English",

pages = "465--469",

journal = "Proceedings, Annual Technical Conference - Society of Vacuum Coaters",

issn = "0737-5921",

publisher = "Society of Vacuum Coaters",

note = "SVC, Society of Vacuum Coaters - 48th Annual Technical Conference ; Conference date: 23-04-2005 Through 28-04-2005",

}

TY - JOUR

T1 - Characterization of high-power pulsed dc magnetron discharges for ionized high-rate sputtering of copper films

AU - Vlcek, J.

AU - Pajdarova, A. D.

AU - Belsky, P.

AU - Lukas, J.

AU - Kudlacek, P.

AU - Musil, J.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - A systematic time-resolved plasma diagnostics was carried out in high-power pulsed dc magnetron discharges used for ionized high-rate sputtering of high-quality, highly conductive copper films. The deposition rate of Cu films formed on a grounded substrate at the distance of 100mm from the target was higher than 2μm/min (averaged over a total deposition time) for an average target power loading in a pulse Pda=700W/cm2 (calculated for a total area of the target) at a repetition frequency f = lkHz, a 20% duty cycle and argon pressures p=0.1 and 1 Pa. The flux of sputtered Cu atoms was highly ionized with a strong predominance of Cu+ ions (80-95% after a short initial stage of pulses) in total ion fluxes to the substrate.

AB - A systematic time-resolved plasma diagnostics was carried out in high-power pulsed dc magnetron discharges used for ionized high-rate sputtering of high-quality, highly conductive copper films. The deposition rate of Cu films formed on a grounded substrate at the distance of 100mm from the target was higher than 2μm/min (averaged over a total deposition time) for an average target power loading in a pulse Pda=700W/cm2 (calculated for a total area of the target) at a repetition frequency f = lkHz, a 20% duty cycle and argon pressures p=0.1 and 1 Pa. The flux of sputtered Cu atoms was highly ionized with a strong predominance of Cu+ ions (80-95% after a short initial stage of pulses) in total ion fluxes to the substrate.

KW - High-power pulsed magnetron

KW - High-rate deposition

KW - Ionized sputtering

KW - Time-resolved diagnostics

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UR - http://www.scopus.com/inward/citedby.url?scp=33644985860&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:33644985860

SP - 465

EP - 469

JO - Proceedings, Annual Technical Conference - Society of Vacuum Coaters

JF - Proceedings, Annual Technical Conference - Society of Vacuum Coaters

SN - 0737-5921

T2 - SVC, Society of Vacuum Coaters - 48th Annual Technical Conference

Y2 - 23 April 2005 through 28 April 2005

ER -