Characterisation of silicon carbide Schottky diodes and COOLMOS™ transistors at high temperature

Laurent Dupont, Stéphane Lefebvre, Serge Bontemps, Zoubir Khatir, Régis Meuret

Research output: Contribution to journalConference article

8 Citations (Scopus)

Abstract

The highly doping level of the base region of COOLMOS™ transistors allows higher temperature operations than with conventional silicon transistors having the same blocking voltage. In this paper, the temperature influence on different SiC Schottky diodes and Silicon COOLMOS™ transistors characteristics is discussed. Comparisons are made between SiC Schottky diodes and Si PIN diodes and beween IGBTs, low voltage MOSFET and COOLMOS™ at high temperature. Results on the leakage current indicate the ability of SiC Schottky diodes and Si COOLMOS™ transistors to be used at temperature about 200°C. The paper will present results on the behaviour of SiC schottky diodes and COOLMOS™ transistors in the on-state and in switching operations. Switching behaviour is analysed in a buck-chopper working in single shoot condition. Results show that temperature has a great influence on the on-state performances of the tested devices, but that the switching performances of SiC Schottky diodes and COOLMOS™ transistors are not significantly modified at elevated temperatures.

Original languageEnglish
Pages (from-to)566-571
Number of pages6
JournalPESC Record - IEEE Annual Power Electronics Specialists Conference
Volume1
Publication statusPublished - 29 Nov 2004
Externally publishedYes
Event2004 IEEE 35th Annual Power Electronics Specialists Conference, PESC04 - Aachen, Germany
Duration: 20 Jun 200425 Jun 2004

ASJC Scopus subject areas

  • Modelling and Simulation
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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