Characterisation of silicon carbide Schottky diodes and COOLMOS™ transistors at high temperature

Laurent Dupont, Stéphane Lefebvre, Serge Bontemps, Zoubir Khatir, Régis Meuret

Research output: Contribution to journalConference article

8 Citations (Scopus)

Abstract

The highly doping level of the base region of COOLMOS™ transistors allows higher temperature operations than with conventional silicon transistors having the same blocking voltage. In this paper, the temperature influence on different SiC Schottky diodes and Silicon COOLMOS™ transistors characteristics is discussed. Comparisons are made between SiC Schottky diodes and Si PIN diodes and beween IGBTs, low voltage MOSFET and COOLMOS™ at high temperature. Results on the leakage current indicate the ability of SiC Schottky diodes and Si COOLMOS™ transistors to be used at temperature about 200°C. The paper will present results on the behaviour of SiC schottky diodes and COOLMOS™ transistors in the on-state and in switching operations. Switching behaviour is analysed in a buck-chopper working in single shoot condition. Results show that temperature has a great influence on the on-state performances of the tested devices, but that the switching performances of SiC Schottky diodes and COOLMOS™ transistors are not significantly modified at elevated temperatures.

Original languageEnglish
Pages (from-to)566-571
Number of pages6
JournalPESC Record - IEEE Annual Power Electronics Specialists Conference
Volume1
Publication statusPublished - 29 Nov 2004
Externally publishedYes
Event2004 IEEE 35th Annual Power Electronics Specialists Conference, PESC04 - Aachen, Germany
Duration: 20 Jun 200425 Jun 2004

Fingerprint

Schottky diodes
Diode
Silicon carbide
silicon carbides
Silicon
Transistors
Diodes
transistors
silicon transistors
Temperature
electric choppers
temperature
High temperature operations
Leakage Current
MOSFET
Low Voltage
low voltage
Insulated gate bipolar transistors (IGBT)
Electric potential
leakage

ASJC Scopus subject areas

  • Modelling and Simulation
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Characterisation of silicon carbide Schottky diodes and COOLMOS™ transistors at high temperature. / Dupont, Laurent; Lefebvre, Stéphane; Bontemps, Serge; Khatir, Zoubir; Meuret, Régis.

In: PESC Record - IEEE Annual Power Electronics Specialists Conference, Vol. 1, 29.11.2004, p. 566-571.

Research output: Contribution to journalConference article

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AU - Meuret, Régis

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