Channeling of Relativistic Electrons in Half-Wave Silicon Crystal and Corresponding Radiation

Y. Takabayashi, V. G. Bagrov, O. V. Bogdanov, Yu L. Pivovarov, T. A. Tukhfatullin

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The new experiments on channeling of 255 MeV in a 0.7 μm silicon half-wavelength crystal were performed at SAGA LS facility. Both experimental and simulated electron angular distribution after the crystal and corresponding radiation spectra reveal the number of peculiarities.

Original languageEnglish
Article number062007
JournalJournal of Physics: Conference Series
Issue number6
Publication statusPublished - 7 Sep 2015


ASJC Scopus subject areas

  • Physics and Astronomy(all)

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