Channeling of Relativistic Electrons in Half-Wave Silicon Crystal and Corresponding Radiation

Y. Takabayashi, V. G. Bagrov, O. V. Bogdanov, Yu L. Pivovarov, T. A. Tukhfatullin

Research output: Contribution to journal › Article

Abstract

The new experiments on channeling of 255 MeV in a 0.7 μm silicon half-wavelength crystal were performed at SAGA LS facility. Both experimental and simulated electron angular distribution after the crystal and corresponding radiation spectra reveal the number of peculiarities.

Original language	English
Article number	062007
Journal	Journal of Physics: Conference Series
Volume	635
Issue number	6
DOIs	https://doi.org/10.1088/1742-6596/635/6/062007
Publication status	Published - 7 Sep 2015

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ASJC Scopus subject areas

Physics and Astronomy(all)

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Takabayashi, Y., Bagrov, V. G., Bogdanov, O. V., Pivovarov, Y. L., & Tukhfatullin, T. A. (2015). Channeling of Relativistic Electrons in Half-Wave Silicon Crystal and Corresponding Radiation. Journal of Physics: Conference Series, 635(6), [062007]. https://doi.org/10.1088/1742-6596/635/6/062007

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AU - Tukhfatullin, T. A.

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Access to Document

10.1088/1742-6596/635/6/062007