Channeling of Relativistic Electrons in Half-Wave Silicon Crystal and Corresponding Radiation

Y. Takabayashi, V. G. Bagrov, O. V. Bogdanov, Yu L. Pivovarov, T. A. Tukhfatullin

Research output: Contribution to journal › Article › peer-review

Abstract

The new experiments on channeling of 255 MeV in a 0.7 μm silicon half-wavelength crystal were performed at SAGA LS facility. Both experimental and simulated electron angular distribution after the crystal and corresponding radiation spectra reveal the number of peculiarities.

Original language	English
Article number	062007
Journal	Journal of Physics: Conference Series
Volume	635
Issue number	6
DOIs	https://doi.org/10.1088/1742-6596/635/6/062007
Publication status	Published - 7 Sep 2015

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1088/1742-6596/635/6/062007

Fingerprint Dive into the research topics of 'Channeling of Relativistic Electrons in Half-Wave Silicon Crystal and Corresponding Radiation'. Together they form a unique fingerprint.

Cite this

@article{7b980d0f790743f4b23d915a0fcf46c1,

title = "Channeling of Relativistic Electrons in Half-Wave Silicon Crystal and Corresponding Radiation",

abstract = "The new experiments on channeling of 255 MeV in a 0.7 μm silicon half-wavelength crystal were performed at SAGA LS facility. Both experimental and simulated electron angular distribution after the crystal and corresponding radiation spectra reveal the number of peculiarities.",

author = "Y. Takabayashi and Bagrov, {V. G.} and Bogdanov, {O. V.} and Pivovarov, {Yu L.} and Tukhfatullin, {T. A.}",

year = "2015",

month = sep,

day = "7",

doi = "10.1088/1742-6596/635/6/062007",

language = "English",

volume = "635",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "6",

}

TY - JOUR

T1 - Channeling of Relativistic Electrons in Half-Wave Silicon Crystal and Corresponding Radiation

AU - Takabayashi, Y.

AU - Bagrov, V. G.

AU - Bogdanov, O. V.

AU - Pivovarov, Yu L.

AU - Tukhfatullin, T. A.

PY - 2015/9/7

Y1 - 2015/9/7

N2 - The new experiments on channeling of 255 MeV in a 0.7 μm silicon half-wavelength crystal were performed at SAGA LS facility. Both experimental and simulated electron angular distribution after the crystal and corresponding radiation spectra reveal the number of peculiarities.

AB - The new experiments on channeling of 255 MeV in a 0.7 μm silicon half-wavelength crystal were performed at SAGA LS facility. Both experimental and simulated electron angular distribution after the crystal and corresponding radiation spectra reveal the number of peculiarities.

UR - http://www.scopus.com/inward/record.url?scp=84948783989&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84948783989&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/635/6/062007

DO - 10.1088/1742-6596/635/6/062007

M3 - Article

AN - SCOPUS:84948783989

VL - 635

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 6

M1 - 062007

ER -