Channeling of Relativistic Electrons in Half-Wave Silicon Crystal and Corresponding Radiation

Y. Takabayashi, V. G. Bagrov, O. V. Bogdanov, Yu L. Pivovarov, T. A. Tukhfatullin

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The new experiments on channeling of 255 MeV in a 0.7 μm silicon half-wavelength crystal were performed at SAGA LS facility. Both experimental and simulated electron angular distribution after the crystal and corresponding radiation spectra reveal the number of peculiarities.

Original languageEnglish
Article number062007
JournalJournal of Physics: Conference Series
Volume635
Issue number6
DOIs
Publication statusPublished - 7 Sep 2015

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radiation spectra
silicon
radiation
crystals
electrons
angular distribution
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Channeling of Relativistic Electrons in Half-Wave Silicon Crystal and Corresponding Radiation. / Takabayashi, Y.; Bagrov, V. G.; Bogdanov, O. V.; Pivovarov, Yu L.; Tukhfatullin, T. A.

In: Journal of Physics: Conference Series, Vol. 635, No. 6, 062007, 07.09.2015.

Research output: Contribution to journalArticle

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