Abstract
A theoretical analysis is made of the conditions for the appearance of a growing process of the annihilation of free vacancies and interstices in semiconductor crystals. It is found that the process of chain annihilation of Frenkel defects occurs in those crystals for which the energy evolved as a result of annihilation is considerably greater than the energy barrier preventing annihilation, and the concentration of defects is higher than a certain critical value. It is postulated that chain annihilation may be the cause of the ordering of crystals at low radiation doses.
| Original language | English |
|---|---|
| Title of host publication | Soviet physics. Semiconductors |
| Pages | 305-308 |
| Number of pages | 4 |
| Volume | 16 |
| Edition | 3 |
| Publication status | Published - Mar 1982 |
ASJC Scopus subject areas
- Engineering(all)