CHAIN ANNIHILATION OF DEFECTS IN SEMICONDUCTOR CRYSTALS.

P. A. Cherdantsev, I. P. Chernov, A. P. Mamontov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A theoretical analysis is made of the conditions for the appearance of a growing process of the annihilation of free vacancies and interstices in semiconductor crystals. It is found that the process of chain annihilation of Frenkel defects occurs in those crystals for which the energy evolved as a result of annihilation is considerably greater than the energy barrier preventing annihilation, and the concentration of defects is higher than a certain critical value. It is postulated that chain annihilation may be the cause of the ordering of crystals at low radiation doses.

Original languageEnglish
Title of host publicationSoviet physics. Semiconductors
Pages305-308
Number of pages4
Volume16
Edition3
Publication statusPublished - Mar 1982

    Fingerprint

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Cherdantsev, P. A., Chernov, I. P., & Mamontov, A. P. (1982). CHAIN ANNIHILATION OF DEFECTS IN SEMICONDUCTOR CRYSTALS. In Soviet physics. Semiconductors (3 ed., Vol. 16, pp. 305-308)