Carbon saturation of silicon target under the action of pulsed high-intensity ion beam

N. E. Aktaev, G. E. Remnev

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The action of the pulsed high-intensity ion (carbon) beam on the silicon target is investigated by means of the theoretical model. The forming of the carbon concentration profile in depth of the silicon sample is modelled. It is argued, that there are two ways of the profile forming: short-pulsed ion (carbon) implantation and diffusion of the carbon atoms adsorbed on the silicon surface. It is shown, that the carbon atoms adsorbed on the silicon surface and diffused into the silicon target play the main role in the concentration profile forming.

Original languageEnglish
Article number012054
JournalIOP Conference Series: Materials Science and Engineering
Volume110
Issue number1
DOIs
Publication statusPublished - 23 Feb 2016

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Silicon
Ion beams
Carbon
Ions
Atoms
Ion implantation

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Cite this

Carbon saturation of silicon target under the action of pulsed high-intensity ion beam. / Aktaev, N. E.; Remnev, G. E.

In: IOP Conference Series: Materials Science and Engineering, Vol. 110, No. 1, 012054, 23.02.2016.

Research output: Contribution to journalArticle

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