Abstract
The action of the pulsed high-intensity ion (carbon) beam on the silicon target is investigated by means of the theoretical model. The forming of the carbon concentration profile in depth of the silicon sample is modelled. It is argued, that there are two ways of the profile forming: short-pulsed ion (carbon) implantation and diffusion of the carbon atoms adsorbed on the silicon surface. It is shown, that the carbon atoms adsorbed on the silicon surface and diffused into the silicon target play the main role in the concentration profile forming.
| Original language | English |
|---|---|
| Article number | 012054 |
| Journal | IOP Conference Series: Materials Science and Engineering |
| Volume | 110 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 23 Feb 2016 |
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ASJC Scopus subject areas
- Engineering(all)
- Materials Science(all)
Cite this
Carbon saturation of silicon target under the action of pulsed high-intensity ion beam. / Aktaev, N. E.; Remnev, G. E.
In: IOP Conference Series: Materials Science and Engineering, Vol. 110, No. 1, 012054, 23.02.2016.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Carbon saturation of silicon target under the action of pulsed high-intensity ion beam
AU - Aktaev, N. E.
AU - Remnev, G. E.
PY - 2016/2/23
Y1 - 2016/2/23
N2 - The action of the pulsed high-intensity ion (carbon) beam on the silicon target is investigated by means of the theoretical model. The forming of the carbon concentration profile in depth of the silicon sample is modelled. It is argued, that there are two ways of the profile forming: short-pulsed ion (carbon) implantation and diffusion of the carbon atoms adsorbed on the silicon surface. It is shown, that the carbon atoms adsorbed on the silicon surface and diffused into the silicon target play the main role in the concentration profile forming.
AB - The action of the pulsed high-intensity ion (carbon) beam on the silicon target is investigated by means of the theoretical model. The forming of the carbon concentration profile in depth of the silicon sample is modelled. It is argued, that there are two ways of the profile forming: short-pulsed ion (carbon) implantation and diffusion of the carbon atoms adsorbed on the silicon surface. It is shown, that the carbon atoms adsorbed on the silicon surface and diffused into the silicon target play the main role in the concentration profile forming.
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UR - http://www.scopus.com/inward/citedby.url?scp=84971613761&partnerID=8YFLogxK
U2 - 10.1088/1757-899X/110/1/012054
DO - 10.1088/1757-899X/110/1/012054
M3 - Article
VL - 110
JO - IOP Conference Series: Materials Science and Engineering
JF - IOP Conference Series: Materials Science and Engineering
SN - 1757-8981
IS - 1
M1 - 012054
ER -