Carbon saturation of silicon target under the action of pulsed high-intensity ion beam

N. E. Aktaev, G. E. Remnev

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The action of the pulsed high-intensity ion (carbon) beam on the silicon target is investigated by means of the theoretical model. The forming of the carbon concentration profile in depth of the silicon sample is modelled. It is argued, that there are two ways of the profile forming: short-pulsed ion (carbon) implantation and diffusion of the carbon atoms adsorbed on the silicon surface. It is shown, that the carbon atoms adsorbed on the silicon surface and diffused into the silicon target play the main role in the concentration profile forming.

Original languageEnglish
Article number012054
JournalIOP Conference Series: Materials Science and Engineering
Issue number1
Publication statusPublished - 23 Feb 2016


ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

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