In this article we carried out the calculations of the depth distribution of implanted ions of arsenic and indium, loss of energy and cascade-probability functions in silicon. Comparison of the calculations with the experimental data is in the satisfactory agreement. The computer simulation and analysis of the characteristics of ions depending on the depth of penetration and the number of interactions were carried out.
|Journal||Journal of Physics: Conference Series|
|Publication status||Published - 1 Jan 2014|
|Event||International Congress on Energy Fluxes and Radiation Effects 2014, EFRE 2014 - Tomsk, Russian Federation|
Duration: 21 Sep 2014 → 26 Sep 2014
ASJC Scopus subject areas
- Physics and Astronomy(all)