Calculation of the spatial distribution of defects and cascade- Probability functions in the materials

A. A. Kupchishin, A. A. Kupchishin, E. V. Shmygalev, T. A. Shmygaleva, K. B. Tlebaev

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

In this article we carried out the calculations of the depth distribution of implanted ions of arsenic and indium, loss of energy and cascade-probability functions in silicon. Comparison of the calculations with the experimental data is in the satisfactory agreement. The computer simulation and analysis of the characteristics of ions depending on the depth of penetration and the number of interactions were carried out.

Original languageEnglish
Article number012047
JournalJournal of Physics: Conference Series
Volume552
Issue number1
DOIs
Publication statusPublished - 1 Jan 2014
Externally publishedYes
EventInternational Congress on Energy Fluxes and Radiation Effects 2014, EFRE 2014 - Tomsk, Russian Federation
Duration: 21 Sep 201426 Sep 2014

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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