Abstract
In paper the experimental results of the breakdown strength study for the two-layer dielectrics under the high electric field are given. The relation between the breakdown strength (Eb) and the boundary position (ξ) between layers for the two-layer dielectrics is anomalous in character. Similar results for the dissipation factor tanδ in low and high field were obtained. We suppose that the discovered changes in Eb and tanδ with the changing ξ are probably caused by the forming peculiarities of the relaxation polarization due to the existence of abrupt step in both the permittivity and conductivity at the boundary between dielectric layers.
| Original language | English |
|---|---|
| Title of host publication | IEE Conference Publication |
| Place of Publication | Stevenage, United Kingdom |
| Publisher | IEE |
| Volume | 4 |
| Edition | 467 |
| ISBN (Print) | 0852967195 |
| Publication status | Published - 1999 |
| Event | Proceedings of the 1999 11th International Symposium on 'High Voltage Engineering' (ish99) - London, UK Duration: 23 Aug 1999 → 27 Aug 1999 |
Other
| Other | Proceedings of the 1999 11th International Symposium on 'High Voltage Engineering' (ish99) |
|---|---|
| City | London, UK |
| Period | 23.8.99 → 27.8.99 |
Fingerprint
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Lebedev, S. M., Gefle, O. S., Pokholkov, Y. P., & Chichikin, V. I. (1999). Breakdown strength of two-layer dielectrics. In IEE Conference Publication (467 ed., Vol. 4). Stevenage, United Kingdom: IEE.