Breakdown strength of two-layer dielectrics

Abstract

In paper the experimental results of the breakdown strength study for the two-layer dielectrics under the high electric field are given. The relation between the breakdown strength (E_b) and the boundary position (ξ) between layers for the two-layer dielectrics is anomalous in character. Similar results for the dissipation factor tanδ in low and high field were obtained. We suppose that the discovered changes in E_b and tanδ with the changing ξ are probably caused by the forming peculiarities of the relaxation polarization due to the existence of abrupt step in both the permittivity and conductivity at the boundary between dielectric layers.

Original language	English
Title of host publication	IEE Conference Publication
Place of Publication	Stevenage, United Kingdom
Publisher	IEE
Volume	4
Edition	467
ISBN (Print)	0852967195
Publication status	Published - 1999
Event	Proceedings of the 1999 11th International Symposium on 'High Voltage Engineering' (ish99) - London, UK Duration: 23 Aug 1999 → 27 Aug 1999

Other

Other	Proceedings of the 1999 11th International Symposium on 'High Voltage Engineering' (ish99)
City	London, UK
Period	23.8.99 → 27.8.99

ASJC Scopus subject areas

Electrical and Electronic Engineering

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@inproceedings{b2347de3b6fc43a2a20b526486a196f5,

title = "Breakdown strength of two-layer dielectrics",

abstract = "In paper the experimental results of the breakdown strength study for the two-layer dielectrics under the high electric field are given. The relation between the breakdown strength (Eb) and the boundary position (ξ) between layers for the two-layer dielectrics is anomalous in character. Similar results for the dissipation factor tanδ in low and high field were obtained. We suppose that the discovered changes in Eb and tanδ with the changing ξ are probably caused by the forming peculiarities of the relaxation polarization due to the existence of abrupt step in both the permittivity and conductivity at the boundary between dielectric layers.",

author = "Lebedev, {S. M.} and Gefle, {O. S.} and Pokholkov, {Yu P.} and Chichikin, {V. I.}",

year = "1999",

language = "English",

isbn = "0852967195",

volume = "4",

booktitle = "IEE Conference Publication",

publisher = "IEE",

edition = "467",

note = "Proceedings of the 1999 11th International Symposium on 'High Voltage Engineering' (ish99) ; Conference date: 23-08-1999 Through 27-08-1999",

}

TY - GEN

T1 - Breakdown strength of two-layer dielectrics

AU - Lebedev, S. M.

AU - Gefle, O. S.

AU - Pokholkov, Yu P.

AU - Chichikin, V. I.

PY - 1999

Y1 - 1999

N2 - In paper the experimental results of the breakdown strength study for the two-layer dielectrics under the high electric field are given. The relation between the breakdown strength (Eb) and the boundary position (ξ) between layers for the two-layer dielectrics is anomalous in character. Similar results for the dissipation factor tanδ in low and high field were obtained. We suppose that the discovered changes in Eb and tanδ with the changing ξ are probably caused by the forming peculiarities of the relaxation polarization due to the existence of abrupt step in both the permittivity and conductivity at the boundary between dielectric layers.

AB - In paper the experimental results of the breakdown strength study for the two-layer dielectrics under the high electric field are given. The relation between the breakdown strength (Eb) and the boundary position (ξ) between layers for the two-layer dielectrics is anomalous in character. Similar results for the dissipation factor tanδ in low and high field were obtained. We suppose that the discovered changes in Eb and tanδ with the changing ξ are probably caused by the forming peculiarities of the relaxation polarization due to the existence of abrupt step in both the permittivity and conductivity at the boundary between dielectric layers.

UR - http://www.scopus.com/inward/record.url?scp=17144435353&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17144435353&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:17144435353

SN - 0852967195

VL - 4

BT - IEE Conference Publication

PB - IEE

CY - Stevenage, United Kingdom

T2 - Proceedings of the 1999 11th International Symposium on 'High Voltage Engineering' (ish99)

Y2 - 23 August 1999 through 27 August 1999

ER -