Bound states of swift electrons for a 〈111〉 axis of silicon

V. V. Kaplin, S. V. Plotnikov, I. A. Tsekhanovsky, S. A. Vorobiev

Center for Industrial Tomography

Research output: Contribution to journal › Article

Abstract

Quantum-mechanical treatment of the bound states of swift electrons with the single atomic rows is developed. In Si 〈111〉 crystal for 1.0 and 2.0 MeV electrons the energy levels of the various states have been calculated, which are used for the discussion of the measured angular distributions of transmitted electron beam.

Original language	English
Pages (from-to)	447-448
Number of pages	2
Journal	Physics Letters A
Volume	54
Issue number	6
DOIs	https://doi.org/10.1016/0375-9601(75)90806-3
Publication status	Published - 20 Oct 1975

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1016/0375-9601(75)90806-3

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Kaplin, V. V., Plotnikov, S. V., Tsekhanovsky, I. A., & Vorobiev, S. A. (1975). Bound states of swift electrons for a 〈111〉 axis of silicon. Physics Letters A, 54(6), 447-448. https://doi.org/10.1016/0375-9601(75)90806-3

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abstract = "Quantum-mechanical treatment of the bound states of swift electrons with the single atomic rows is developed. In Si 〈111〉 crystal for 1.0 and 2.0 MeV electrons the energy levels of the various states have been calculated, which are used for the discussion of the measured angular distributions of transmitted electron beam.",

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AU - Tsekhanovsky, I. A.

AU - Vorobiev, S. A.

PY - 1975/10/20

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