Bound states of swift electrons for a 〈111〉 axis of silicon

V. V. Kaplin, S. V. Plotnikov, I. A. Tsekhanovsky, S. A. Vorobiev

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Abstract

Quantum-mechanical treatment of the bound states of swift electrons with the single atomic rows is developed. In Si 〈111〉 crystal for 1.0 and 2.0 MeV electrons the energy levels of the various states have been calculated, which are used for the discussion of the measured angular distributions of transmitted electron beam.

Original languageEnglish
Pages (from-to)447-448
Number of pages2
JournalPhysics Letters A
Volume54
Issue number6
DOIs
Publication statusPublished - 20 Oct 1975

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silicon
electrons
angular distribution
energy levels
electron beams
crystals

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Bound states of swift electrons for a 〈111〉 axis of silicon. / Kaplin, V. V.; Plotnikov, S. V.; Tsekhanovsky, I. A.; Vorobiev, S. A.

In: Physics Letters A, Vol. 54, No. 6, 20.10.1975, p. 447-448.

Research output: Contribution to journalArticle

Kaplin, VV, Plotnikov, SV, Tsekhanovsky, IA & Vorobiev, SA 1975, 'Bound states of swift electrons for a 〈111〉 axis of silicon', Physics Letters A, vol. 54, no. 6, pp. 447-448. https://doi.org/10.1016/0375-9601(75)90806-3
Kaplin, V. V. ; Plotnikov, S. V. ; Tsekhanovsky, I. A. ; Vorobiev, S. A. / Bound states of swift electrons for a 〈111〉 axis of silicon. In: Physics Letters A. 1975 ; Vol. 54, No. 6. pp. 447-448.
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