Bound states of swift electrons for a 〈111〉 axis of silicon

V. V. Kaplin, S. V. Plotnikov, I. A. Tsekhanovsky, S. A. Vorobiev

Research output: Contribution to journal › Article

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Abstract

Quantum-mechanical treatment of the bound states of swift electrons with the single atomic rows is developed. In Si 〈111〉 crystal for 1.0 and 2.0 MeV electrons the energy levels of the various states have been calculated, which are used for the discussion of the measured angular distributions of transmitted electron beam.

Original languageEnglish
Pages (from-to)447-448
Number of pages2
JournalPhysics Letters A
Volume54
Issue number6
DOIs
Publication statusPublished - 20 Oct 1975

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silicon
electrons
angular distribution
energy levels
electron beams
crystals

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Bound states of swift electrons for a 〈111〉 axis of silicon. / Kaplin, V. V.; Plotnikov, S. V.; Tsekhanovsky, I. A.; Vorobiev, S. A.

In: Physics Letters A, Vol. 54, No. 6, 20.10.1975, p. 447-448.

Research output: Contribution to journal › Article

Kaplin, VV, Plotnikov, SV, Tsekhanovsky, IA & Vorobiev, SA 1975, 'Bound states of swift electrons for a 〈111〉 axis of silicon', Physics Letters A, vol. 54, no. 6, pp. 447-448. https://doi.org/10.1016/0375-9601(75)90806-3
Kaplin VV, Plotnikov SV, Tsekhanovsky IA, Vorobiev SA. Bound states of swift electrons for a 〈111〉 axis of silicon. Physics Letters A. 1975 Oct 20;54(6):447-448. https://doi.org/10.1016/0375-9601(75)90806-3
Kaplin, V. V. ; Plotnikov, S. V. ; Tsekhanovsky, I. A. ; Vorobiev, S. A. / Bound states of swift electrons for a 〈111〉 axis of silicon. In: Physics Letters A. 1975 ; Vol. 54, No. 6. pp. 447-448.
@article{67fc9c887f7e44c79495f4db6f6b0586,
title = "Bound states of swift electrons for a 〈111〉 axis of silicon",
abstract = "Quantum-mechanical treatment of the bound states of swift electrons with the single atomic rows is developed. In Si 〈111〉 crystal for 1.0 and 2.0 MeV electrons the energy levels of the various states have been calculated, which are used for the discussion of the measured angular distributions of transmitted electron beam.",
author = "Kaplin, {V. V.} and Plotnikov, {S. V.} and Tsekhanovsky, {I. A.} and Vorobiev, {S. A.}",
year = "1975",
month = "10",
day = "20",
doi = "10.1016/0375-9601(75)90806-3",
language = "English",
volume = "54",
pages = "447--448",
journal = "Physics Letters, Section A: General, Atomic and Solid State Physics",
issn = "0375-9601",
publisher = "Elsevier",
number = "6",

}

TY - JOUR

T1 - Bound states of swift electrons for a 〈111〉 axis of silicon

AU - Kaplin, V. V.

AU - Plotnikov, S. V.

AU - Tsekhanovsky, I. A.

AU - Vorobiev, S. A.

PY - 1975/10/20

Y1 - 1975/10/20

N2 - Quantum-mechanical treatment of the bound states of swift electrons with the single atomic rows is developed. In Si 〈111〉 crystal for 1.0 and 2.0 MeV electrons the energy levels of the various states have been calculated, which are used for the discussion of the measured angular distributions of transmitted electron beam.

AB - Quantum-mechanical treatment of the bound states of swift electrons with the single atomic rows is developed. In Si 〈111〉 crystal for 1.0 and 2.0 MeV electrons the energy levels of the various states have been calculated, which are used for the discussion of the measured angular distributions of transmitted electron beam.

UR - http://www.scopus.com/inward/record.url?scp=5344248421&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=5344248421&partnerID=8YFLogxK

U2 - 10.1016/0375-9601(75)90806-3

DO - 10.1016/0375-9601(75)90806-3

M3 - Article

AN - SCOPUS:5344248421

VL - 54

SP - 447

EP - 448

JO - Physics Letters, Section A: General, Atomic and Solid State Physics

JF - Physics Letters, Section A: General, Atomic and Solid State Physics

SN - 0375-9601

IS - 6

ER -

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