TY - JOUR
T1 - Bound states of swift electrons for a 〈111〉 axis of silicon
AU - Kaplin, V. V.
AU - Plotnikov, S. V.
AU - Tsekhanovsky, I. A.
AU - Vorobiev, S. A.
PY - 1975/10/20
Y1 - 1975/10/20
N2 - Quantum-mechanical treatment of the bound states of swift electrons with the single atomic rows is developed. In Si 〈111〉 crystal for 1.0 and 2.0 MeV electrons the energy levels of the various states have been calculated, which are used for the discussion of the measured angular distributions of transmitted electron beam.
AB - Quantum-mechanical treatment of the bound states of swift electrons with the single atomic rows is developed. In Si 〈111〉 crystal for 1.0 and 2.0 MeV electrons the energy levels of the various states have been calculated, which are used for the discussion of the measured angular distributions of transmitted electron beam.
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U2 - 10.1016/0375-9601(75)90806-3
DO - 10.1016/0375-9601(75)90806-3
M3 - Article
AN - SCOPUS:5344248421
VL - 54
SP - 447
EP - 448
JO - Physics Letters, Section A: General, Atomic and Solid State Physics
JF - Physics Letters, Section A: General, Atomic and Solid State Physics
SN - 0375-9601
IS - 6
ER -