Abstract
The work is dedicated to the investigation of blister formation in ZrN/SiNx multilayer films irradiated with He ions (30 keV) and annealed in a vacuum at 600 °C. Multilayer films were prepared by reactive magnetron sputter-deposition on Si wafers under Ar + N2 plasma discharges. ZrN/SiNx films were deposited by sequential sputtering from elemental Zr and Si3N4 targets at substrate temperature of 300 °C, with ZrN and SiNx layer thickness varying from 2 to 10 nm. According to transmission electron microscopy (TEM), the multilayer films consist of nanocrystalline (002)-oriented ZrN and amorphous SiNx layers. Surface morphology changes of ZrN/SiNx films irradiated with He ions (30 keV) and annealed in a vacuum at 600 °C were studied by scanning electron (SEM) and atomic-force microscopy (AFM) methods. It has been found that under He ions (30 keV) irradiation ZrN/SiNx multilayer films remain resistant to blistering and flaking up to fluence of 8·1016 cm−2. The investigations have shown influence of the crystalline and amorphous layer thicknesses on the character and damage degree of the multilayer films surface as a result of post-radiation annealing at 600 °C. In this work potential processes (mechanisms) of blister formation and flacking in ZrN/SiNx multilayer systems are discussed.
Original language | English |
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Pages (from-to) | 170-176 |
Number of pages | 7 |
Journal | Surface and Coatings Technology |
Volume | 344 |
DOIs | |
Publication status | Published - 25 Jun 2018 |
Keywords
- Blisters
- Flaking
- Irradiation
- Multilayer films
- Vacuum annealing
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry