Blister formation in ZrN/SiN multilayers after He irradiation

Abstract

The work is dedicated to the investigation of blister formation in ZrN/SiN_x multilayer films irradiated with He ions (30 keV) and annealed in a vacuum at 600 °C. Multilayer films were prepared by reactive magnetron sputter-deposition on Si wafers under Ar + N₂ plasma discharges. ZrN/SiN_x films were deposited by sequential sputtering from elemental Zr and Si₃N₄ targets at substrate temperature of 300 °C, with ZrN and SiN_x layer thickness varying from 2 to 10 nm. According to transmission electron microscopy (TEM), the multilayer films consist of nanocrystalline (002)-oriented ZrN and amorphous SiN_x layers. Surface morphology changes of ZrN/SiN_x films irradiated with He ions (30 keV) and annealed in a vacuum at 600 °C were studied by scanning electron (SEM) and atomic-force microscopy (AFM) methods. It has been found that under He ions (30 keV) irradiation ZrN/SiN_x multilayer films remain resistant to blistering and flaking up to fluence of 8·10¹⁶ cm⁻². The investigations have shown influence of the crystalline and amorphous layer thicknesses on the character and damage degree of the multilayer films surface as a result of post-radiation annealing at 600 °C. In this work potential processes (mechanisms) of blister formation and flacking in ZrN/SiN_x multilayer systems are discussed.

Original language	English
Pages (from-to)	170-176
Number of pages	7
Journal	Surface and Coatings Technology
Volume	344
DOIs	https://doi.org/10.1016/j.surfcoat.2018.02.095
Publication status	Published - 25 Jun 2018

Keywords

Blisters
Flaking
Irradiation
Multilayer films
Vacuum annealing

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.surfcoat.2018.02.095

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Uglov, V. V., Abadias, G., Zlotski, S. V., Kvasov, N. T., Saladukhin, I. A., & Malashevih, A. A. (2018). Blister formation in ZrN/SiN multilayers after He irradiation. Surface and Coatings Technology, 344, 170-176. https://doi.org/10.1016/j.surfcoat.2018.02.095

@article{f21c77bfbe8b4e5e91d9b14cf40df774,

title = "Blister formation in ZrN/SiN multilayers after He irradiation",

abstract = "The work is dedicated to the investigation of blister formation in ZrN/SiNx multilayer films irradiated with He ions (30 keV) and annealed in a vacuum at 600 °C. Multilayer films were prepared by reactive magnetron sputter-deposition on Si wafers under Ar + N2 plasma discharges. ZrN/SiNx films were deposited by sequential sputtering from elemental Zr and Si3N4 targets at substrate temperature of 300 °C, with ZrN and SiNx layer thickness varying from 2 to 10 nm. According to transmission electron microscopy (TEM), the multilayer films consist of nanocrystalline (002)-oriented ZrN and amorphous SiNx layers. Surface morphology changes of ZrN/SiNx films irradiated with He ions (30 keV) and annealed in a vacuum at 600 °C were studied by scanning electron (SEM) and atomic-force microscopy (AFM) methods. It has been found that under He ions (30 keV) irradiation ZrN/SiNx multilayer films remain resistant to blistering and flaking up to fluence of 8·1016 cm−2. The investigations have shown influence of the crystalline and amorphous layer thicknesses on the character and damage degree of the multilayer films surface as a result of post-radiation annealing at 600 °C. In this work potential processes (mechanisms) of blister formation and flacking in ZrN/SiNx multilayer systems are discussed.",

keywords = "Blisters, Flaking, Irradiation, Multilayer films, Vacuum annealing",

author = "Uglov, {V. V.} and G. Abadias and Zlotski, {S. V.} and Kvasov, {N. T.} and Saladukhin, {I. A.} and Malashevih, {A. A.}",

year = "2018",

month = jun,

day = "25",

doi = "10.1016/j.surfcoat.2018.02.095",

language = "English",

volume = "344",

pages = "170--176",

journal = "Surface and Coatings Technology",

issn = "0257-8972",

publisher = "Elsevier",

}

TY - JOUR

T1 - Blister formation in ZrN/SiN multilayers after He irradiation

AU - Uglov, V. V.

AU - Abadias, G.

AU - Zlotski, S. V.

AU - Kvasov, N. T.

AU - Saladukhin, I. A.

AU - Malashevih, A. A.

PY - 2018/6/25

Y1 - 2018/6/25

N2 - The work is dedicated to the investigation of blister formation in ZrN/SiNx multilayer films irradiated with He ions (30 keV) and annealed in a vacuum at 600 °C. Multilayer films were prepared by reactive magnetron sputter-deposition on Si wafers under Ar + N2 plasma discharges. ZrN/SiNx films were deposited by sequential sputtering from elemental Zr and Si3N4 targets at substrate temperature of 300 °C, with ZrN and SiNx layer thickness varying from 2 to 10 nm. According to transmission electron microscopy (TEM), the multilayer films consist of nanocrystalline (002)-oriented ZrN and amorphous SiNx layers. Surface morphology changes of ZrN/SiNx films irradiated with He ions (30 keV) and annealed in a vacuum at 600 °C were studied by scanning electron (SEM) and atomic-force microscopy (AFM) methods. It has been found that under He ions (30 keV) irradiation ZrN/SiNx multilayer films remain resistant to blistering and flaking up to fluence of 8·1016 cm−2. The investigations have shown influence of the crystalline and amorphous layer thicknesses on the character and damage degree of the multilayer films surface as a result of post-radiation annealing at 600 °C. In this work potential processes (mechanisms) of blister formation and flacking in ZrN/SiNx multilayer systems are discussed.

AB - The work is dedicated to the investigation of blister formation in ZrN/SiNx multilayer films irradiated with He ions (30 keV) and annealed in a vacuum at 600 °C. Multilayer films were prepared by reactive magnetron sputter-deposition on Si wafers under Ar + N2 plasma discharges. ZrN/SiNx films were deposited by sequential sputtering from elemental Zr and Si3N4 targets at substrate temperature of 300 °C, with ZrN and SiNx layer thickness varying from 2 to 10 nm. According to transmission electron microscopy (TEM), the multilayer films consist of nanocrystalline (002)-oriented ZrN and amorphous SiNx layers. Surface morphology changes of ZrN/SiNx films irradiated with He ions (30 keV) and annealed in a vacuum at 600 °C were studied by scanning electron (SEM) and atomic-force microscopy (AFM) methods. It has been found that under He ions (30 keV) irradiation ZrN/SiNx multilayer films remain resistant to blistering and flaking up to fluence of 8·1016 cm−2. The investigations have shown influence of the crystalline and amorphous layer thicknesses on the character and damage degree of the multilayer films surface as a result of post-radiation annealing at 600 °C. In this work potential processes (mechanisms) of blister formation and flacking in ZrN/SiNx multilayer systems are discussed.

KW - Blisters

KW - Flaking

KW - Irradiation

KW - Multilayer films

KW - Vacuum annealing

UR - http://www.scopus.com/inward/record.url?scp=85043495778&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85043495778&partnerID=8YFLogxK

U2 - 10.1016/j.surfcoat.2018.02.095

DO - 10.1016/j.surfcoat.2018.02.095

M3 - Article

AN - SCOPUS:85043495778

VL - 344

SP - 170

EP - 176

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972

ER -