Abstract
The work is dedicated to the investigation of blister formation in ZrN/SiNx multilayer films irradiated with He ions (30 keV) and annealed in a vacuum at 600 °C. Multilayer films were prepared by reactive magnetron sputter-deposition on Si wafers under Ar + N2 plasma discharges. ZrN/SiNx films were deposited by sequential sputtering from elemental Zr and Si3N4 targets at substrate temperature of 300 °C, with ZrN and SiNx layer thickness varying from 2 to 10 nm. According to transmission electron microscopy (TEM), the multilayer films consist of nanocrystalline (002)-oriented ZrN and amorphous SiNx layers. Surface morphology changes of ZrN/SiNx films irradiated with He ions (30 keV) and annealed in a vacuum at 600 °C were studied by scanning electron (SEM) and atomic-force microscopy (AFM) methods. It has been found that under He ions (30 keV) irradiation ZrN/SiNx multilayer films remain resistant to blistering and flaking up to fluence of 8·1016 cm−2. The investigations have shown influence of the crystalline and amorphous layer thicknesses on the character and damage degree of the multilayer films surface as a result of post-radiation annealing at 600 °C. In this work potential processes (mechanisms) of blister formation and flacking in ZrN/SiNx multilayer systems are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 170-176 |
| Number of pages | 7 |
| Journal | Surface and Coatings Technology |
| Volume | 344 |
| DOIs | |
| Publication status | Published - 25 Jun 2018 |
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Keywords
- Blisters
- Flaking
- Irradiation
- Multilayer films
- Vacuum annealing
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
Cite this
Blister formation in ZrN/SiN multilayers after He irradiation. / Uglov, V. V.; Abadias, G.; Zlotski, S. V.; Kvasov, N. T.; Saladukhin, I. A.; Malashevih, A. A.
In: Surface and Coatings Technology, Vol. 344, 25.06.2018, p. 170-176.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Blister formation in ZrN/SiN multilayers after He irradiation
AU - Uglov, V. V.
AU - Abadias, G.
AU - Zlotski, S. V.
AU - Kvasov, N. T.
AU - Saladukhin, I. A.
AU - Malashevih, A. A.
PY - 2018/6/25
Y1 - 2018/6/25
N2 - The work is dedicated to the investigation of blister formation in ZrN/SiNx multilayer films irradiated with He ions (30 keV) and annealed in a vacuum at 600 °C. Multilayer films were prepared by reactive magnetron sputter-deposition on Si wafers under Ar + N2 plasma discharges. ZrN/SiNx films were deposited by sequential sputtering from elemental Zr and Si3N4 targets at substrate temperature of 300 °C, with ZrN and SiNx layer thickness varying from 2 to 10 nm. According to transmission electron microscopy (TEM), the multilayer films consist of nanocrystalline (002)-oriented ZrN and amorphous SiNx layers. Surface morphology changes of ZrN/SiNx films irradiated with He ions (30 keV) and annealed in a vacuum at 600 °C were studied by scanning electron (SEM) and atomic-force microscopy (AFM) methods. It has been found that under He ions (30 keV) irradiation ZrN/SiNx multilayer films remain resistant to blistering and flaking up to fluence of 8·1016 cm−2. The investigations have shown influence of the crystalline and amorphous layer thicknesses on the character and damage degree of the multilayer films surface as a result of post-radiation annealing at 600 °C. In this work potential processes (mechanisms) of blister formation and flacking in ZrN/SiNx multilayer systems are discussed.
AB - The work is dedicated to the investigation of blister formation in ZrN/SiNx multilayer films irradiated with He ions (30 keV) and annealed in a vacuum at 600 °C. Multilayer films were prepared by reactive magnetron sputter-deposition on Si wafers under Ar + N2 plasma discharges. ZrN/SiNx films were deposited by sequential sputtering from elemental Zr and Si3N4 targets at substrate temperature of 300 °C, with ZrN and SiNx layer thickness varying from 2 to 10 nm. According to transmission electron microscopy (TEM), the multilayer films consist of nanocrystalline (002)-oriented ZrN and amorphous SiNx layers. Surface morphology changes of ZrN/SiNx films irradiated with He ions (30 keV) and annealed in a vacuum at 600 °C were studied by scanning electron (SEM) and atomic-force microscopy (AFM) methods. It has been found that under He ions (30 keV) irradiation ZrN/SiNx multilayer films remain resistant to blistering and flaking up to fluence of 8·1016 cm−2. The investigations have shown influence of the crystalline and amorphous layer thicknesses on the character and damage degree of the multilayer films surface as a result of post-radiation annealing at 600 °C. In this work potential processes (mechanisms) of blister formation and flacking in ZrN/SiNx multilayer systems are discussed.
KW - Blisters
KW - Flaking
KW - Irradiation
KW - Multilayer films
KW - Vacuum annealing
UR - http://www.scopus.com/inward/record.url?scp=85043495778&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85043495778&partnerID=8YFLogxK
U2 - 10.1016/j.surfcoat.2018.02.095
DO - 10.1016/j.surfcoat.2018.02.095
M3 - Article
VL - 344
SP - 170
EP - 176
JO - Surface and Coatings Technology
JF - Surface and Coatings Technology
SN - 0257-8972
ER -