Blister formation in ZrN/SiN multilayers after He irradiation

Abstract

The work is dedicated to the investigation of blister formation in ZrN/SiN_x multilayer films irradiated with He ions (30 keV) and annealed in a vacuum at 600 °C. Multilayer films were prepared by reactive magnetron sputter-deposition on Si wafers under Ar + N₂ plasma discharges. ZrN/SiN_x films were deposited by sequential sputtering from elemental Zr and Si₃N₄ targets at substrate temperature of 300 °C, with ZrN and SiN_x layer thickness varying from 2 to 10 nm. According to transmission electron microscopy (TEM), the multilayer films consist of nanocrystalline (002)-oriented ZrN and amorphous SiN_x layers. Surface morphology changes of ZrN/SiN_x films irradiated with He ions (30 keV) and annealed in a vacuum at 600 °C were studied by scanning electron (SEM) and atomic-force microscopy (AFM) methods. It has been found that under He ions (30 keV) irradiation ZrN/SiN_x multilayer films remain resistant to blistering and flaking up to fluence of 8·10¹⁶ cm⁻². The investigations have shown influence of the crystalline and amorphous layer thicknesses on the character and damage degree of the multilayer films surface as a result of post-radiation annealing at 600 °C. In this work potential processes (mechanisms) of blister formation and flacking in ZrN/SiN_x multilayer systems are discussed.

Original language	English
Pages (from-to)	170-176
Number of pages	7
Journal	Surface and Coatings Technology
Volume	344
DOIs	https://doi.org/10.1016/j.surfcoat.2018.02.095
Publication status	Published - 25 Jun 2018

Keywords

Blisters
Flaking
Irradiation
Multilayer films
Vacuum annealing

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/j.surfcoat.2018.02.095

Fingerprint Dive into the research topics of 'Blister formation in ZrN/SiN multilayers after He irradiation'. Together they form a unique fingerprint.

Cite this

@article{f21c77bfbe8b4e5e91d9b14cf40df774,

title = "Blister formation in ZrN/SiN multilayers after He irradiation",

abstract = "The work is dedicated to the investigation of blister formation in ZrN/SiNx multilayer films irradiated with He ions (30 keV) and annealed in a vacuum at 600 °C. Multilayer films were prepared by reactive magnetron sputter-deposition on Si wafers under Ar + N2 plasma discharges. ZrN/SiNx films were deposited by sequential sputtering from elemental Zr and Si3N4 targets at substrate temperature of 300 °C, with ZrN and SiNx layer thickness varying from 2 to 10 nm. According to transmission electron microscopy (TEM), the multilayer films consist of nanocrystalline (002)-oriented ZrN and amorphous SiNx layers. Surface morphology changes of ZrN/SiNx films irradiated with He ions (30 keV) and annealed in a vacuum at 600 °C were studied by scanning electron (SEM) and atomic-force microscopy (AFM) methods. It has been found that under He ions (30 keV) irradiation ZrN/SiNx multilayer films remain resistant to blistering and flaking up to fluence of 8·1016 cm−2. The investigations have shown influence of the crystalline and amorphous layer thicknesses on the character and damage degree of the multilayer films surface as a result of post-radiation annealing at 600 °C. In this work potential processes (mechanisms) of blister formation and flacking in ZrN/SiNx multilayer systems are discussed.",

keywords = "Blisters, Flaking, Irradiation, Multilayer films, Vacuum annealing",

author = "Uglov, {V. V.} and G. Abadias and Zlotski, {S. V.} and Kvasov, {N. T.} and Saladukhin, {I. A.} and Malashevih, {A. A.}",

year = "2018",

month = jun,

day = "25",

doi = "10.1016/j.surfcoat.2018.02.095",

language = "English",

volume = "344",

pages = "170--176",

journal = "Surface and Coatings Technology",

issn = "0257-8972",

publisher = "Elsevier",

}

TY - JOUR

T1 - Blister formation in ZrN/SiN multilayers after He irradiation

AU - Uglov, V. V.

AU - Abadias, G.

AU - Zlotski, S. V.

AU - Kvasov, N. T.

AU - Saladukhin, I. A.

AU - Malashevih, A. A.

PY - 2018/6/25

Y1 - 2018/6/25

N2 - The work is dedicated to the investigation of blister formation in ZrN/SiNx multilayer films irradiated with He ions (30 keV) and annealed in a vacuum at 600 °C. Multilayer films were prepared by reactive magnetron sputter-deposition on Si wafers under Ar + N2 plasma discharges. ZrN/SiNx films were deposited by sequential sputtering from elemental Zr and Si3N4 targets at substrate temperature of 300 °C, with ZrN and SiNx layer thickness varying from 2 to 10 nm. According to transmission electron microscopy (TEM), the multilayer films consist of nanocrystalline (002)-oriented ZrN and amorphous SiNx layers. Surface morphology changes of ZrN/SiNx films irradiated with He ions (30 keV) and annealed in a vacuum at 600 °C were studied by scanning electron (SEM) and atomic-force microscopy (AFM) methods. It has been found that under He ions (30 keV) irradiation ZrN/SiNx multilayer films remain resistant to blistering and flaking up to fluence of 8·1016 cm−2. The investigations have shown influence of the crystalline and amorphous layer thicknesses on the character and damage degree of the multilayer films surface as a result of post-radiation annealing at 600 °C. In this work potential processes (mechanisms) of blister formation and flacking in ZrN/SiNx multilayer systems are discussed.

AB - The work is dedicated to the investigation of blister formation in ZrN/SiNx multilayer films irradiated with He ions (30 keV) and annealed in a vacuum at 600 °C. Multilayer films were prepared by reactive magnetron sputter-deposition on Si wafers under Ar + N2 plasma discharges. ZrN/SiNx films were deposited by sequential sputtering from elemental Zr and Si3N4 targets at substrate temperature of 300 °C, with ZrN and SiNx layer thickness varying from 2 to 10 nm. According to transmission electron microscopy (TEM), the multilayer films consist of nanocrystalline (002)-oriented ZrN and amorphous SiNx layers. Surface morphology changes of ZrN/SiNx films irradiated with He ions (30 keV) and annealed in a vacuum at 600 °C were studied by scanning electron (SEM) and atomic-force microscopy (AFM) methods. It has been found that under He ions (30 keV) irradiation ZrN/SiNx multilayer films remain resistant to blistering and flaking up to fluence of 8·1016 cm−2. The investigations have shown influence of the crystalline and amorphous layer thicknesses on the character and damage degree of the multilayer films surface as a result of post-radiation annealing at 600 °C. In this work potential processes (mechanisms) of blister formation and flacking in ZrN/SiNx multilayer systems are discussed.

KW - Blisters

KW - Flaking

KW - Irradiation

KW - Multilayer films

KW - Vacuum annealing

UR - http://www.scopus.com/inward/record.url?scp=85043495778&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85043495778&partnerID=8YFLogxK

U2 - 10.1016/j.surfcoat.2018.02.095

DO - 10.1016/j.surfcoat.2018.02.095

M3 - Article

AN - SCOPUS:85043495778

VL - 344

SP - 170

EP - 176

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972