Bismuth(III) doped polymer layers for telecommunication applications

Abstract

Bismuth(III)-doped Epoxy Novolak Resin as a novel promising photonics material was designed for applications in 1310 nm. The samples was fabricated by spin-coating and its optical properties are evaluated in the terms on Bismuth(III) concentration.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009
DOIs	https://doi.org/10.1109/CLEOPR.2009.5292489
Publication status	Published - 1 Dec 2009
Externally published	Yes
Event	Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009 - Shanghai, China Duration: 30 Aug 2009 → 3 Sep 2009

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Conference

Conference	Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009
Country	China
City	Shanghai
Period	30.8.09 → 3.9.09

Keywords

Bismuth Luminescence
Epoxy Novolak Resin

ASJC Scopus subject areas

Instrumentation
Atomic and Molecular Physics, and Optics

Access to Document

10.1109/CLEOPR.2009.5292489

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Cite this

Prajzler, V, Lyutakov, O, Huttel, I, Oswald, J, Machovic, V & Jerâbek, V 2009, Bismuth(III) doped polymer layers for telecommunication applications. in Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009., 5292489, Optics InfoBase Conference Papers, Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009, Shanghai, China, 30.8.09. https://doi.org/10.1109/CLEOPR.2009.5292489

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