Abstract
The transient optical absorption spectra and their decay kinetics have been investigated by time-resolved absorption spectroscopy technique in Zn-doped BeO crystals. Comparing transient optical absorption properties of self-trapped excitons (STEs) and Zn-impurity-trapped excitons we have made conclusions about the similarity of their hole components and distinctive peculiarities of forbidden optical transitions in their electron components. The metastable optical absorption of Zn+-centers has been first found. It is shown that the Zn-impurity-trapped exciton formation occurs at the hole stages of recombination thermotunnel processes with the participation of electron Zn+-centers. It is found that high probability of electron and hole center recombination formed in BeO-Zn crystals by electron pulses may be related to a high degree of their space correlation.
| Original language | English |
|---|---|
| Pages (from-to) | 95-101 |
| Number of pages | 7 |
| Journal | Radiation Effects and Defects in Solids |
| Volume | 150 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 1 Jan 1999 |
| Event | Proceedings of the 1998 8th Europhysical Conference on Defects in Insulating Materials, EURODIM 98 - Keele, United Kingdom Duration: 6 Jun 1998 → 11 Jun 1998 |
Fingerprint
ASJC Scopus subject areas
- Radiation
- Nuclear and High Energy Physics
- Materials Science(all)
- Condensed Matter Physics
Cite this
Behavior of trapped electronic excitations in oxide crystals. / Gorbunov, S. V.; Bautin, K. V.; Kudyakov, S. V.; Kruzhalov, A. V.; Ivanov, V. Yu; Yakovlev, V. Yu.
In: Radiation Effects and Defects in Solids, Vol. 150, No. 1-4, 01.01.1999, p. 95-101.Research output: Contribution to journal › Conference article
}
TY - JOUR
T1 - Behavior of trapped electronic excitations in oxide crystals
AU - Gorbunov, S. V.
AU - Bautin, K. V.
AU - Kudyakov, S. V.
AU - Kruzhalov, A. V.
AU - Ivanov, V. Yu
AU - Yakovlev, V. Yu
PY - 1999/1/1
Y1 - 1999/1/1
N2 - The transient optical absorption spectra and their decay kinetics have been investigated by time-resolved absorption spectroscopy technique in Zn-doped BeO crystals. Comparing transient optical absorption properties of self-trapped excitons (STEs) and Zn-impurity-trapped excitons we have made conclusions about the similarity of their hole components and distinctive peculiarities of forbidden optical transitions in their electron components. The metastable optical absorption of Zn+-centers has been first found. It is shown that the Zn-impurity-trapped exciton formation occurs at the hole stages of recombination thermotunnel processes with the participation of electron Zn+-centers. It is found that high probability of electron and hole center recombination formed in BeO-Zn crystals by electron pulses may be related to a high degree of their space correlation.
AB - The transient optical absorption spectra and their decay kinetics have been investigated by time-resolved absorption spectroscopy technique in Zn-doped BeO crystals. Comparing transient optical absorption properties of self-trapped excitons (STEs) and Zn-impurity-trapped excitons we have made conclusions about the similarity of their hole components and distinctive peculiarities of forbidden optical transitions in their electron components. The metastable optical absorption of Zn+-centers has been first found. It is shown that the Zn-impurity-trapped exciton formation occurs at the hole stages of recombination thermotunnel processes with the participation of electron Zn+-centers. It is found that high probability of electron and hole center recombination formed in BeO-Zn crystals by electron pulses may be related to a high degree of their space correlation.
UR - http://www.scopus.com/inward/record.url?scp=0033354766&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033354766&partnerID=8YFLogxK
U2 - 10.1080/10420159908226214
DO - 10.1080/10420159908226214
M3 - Conference article
VL - 150
SP - 95
EP - 101
JO - Radiation Effects and Defects in Solids
JF - Radiation Effects and Defects in Solids
SN - 1042-0150
IS - 1-4
ER -