Band structure of transverse-energy eigenvalues and strong electron scattering by atomic planes in single crystals

A. A. Vorob'ev, D. E. Popov, S. A. Vorob'ev, V. V. Kaplin

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Abstract

The interaction between electrons and atomic planes in a single crystal is discussed via a bound-state model; the transverse-energy spectrum allows one to classify many electron states as bound to individual planes, semibound to a system of planes, or free de Broglie waves. Expressions are derived for the channeling probability and the probability of strong Rutherford scattering. There is a detailed discussion of the states for the (100) and (110) planes of silicon, which play a part in strong electron scattering.

Original languageEnglish
Pages (from-to)94-98
Number of pages5
JournalSoviet Physics Journal
Volume21
Issue number1
DOIs
Publication statusPublished - Jan 1978

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ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Engineering(all)

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