Band structure of transverse-energy eigenvalues and strong electron scattering by atomic planes in single crystals

A. A. Vorob'ev, D. E. Popov, S. A. Vorob'ev, V. V. Kaplin

Research output: Contribution to journalArticle

Abstract

The interaction between electrons and atomic planes in a single crystal is discussed via a bound-state model; the transverse-energy spectrum allows one to classify many electron states as bound to individual planes, semibound to a system of planes, or free de Broglie waves. Expressions are derived for the channeling probability and the probability of strong Rutherford scattering. There is a detailed discussion of the states for the (100) and (110) planes of silicon, which play a part in strong electron scattering.

Original languageEnglish
Pages (from-to)94-98
Number of pages5
JournalSoviet Physics Journal
Volume21
Issue number1
DOIs
Publication statusPublished - Jan 1978

Fingerprint

Electron scattering
Band structure
electron scattering
eigenvalues
Single crystals
single crystals
electron states
Electron energy levels
energy spectra
Scattering
Silicon
energy
Electrons
silicon
scattering
electrons
interactions

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Engineering(all)

Cite this

Band structure of transverse-energy eigenvalues and strong electron scattering by atomic planes in single crystals. / Vorob'ev, A. A.; Popov, D. E.; Vorob'ev, S. A.; Kaplin, V. V.

In: Soviet Physics Journal, Vol. 21, No. 1, 01.1978, p. 94-98.

Research output: Contribution to journalArticle

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