Back-end-of-line compatible contact materials for carbon nanotube based interconnects

Holger Fiedler, Marius Toader, Sascha Hermann, Michael Rennau, Raul D. Rodriguez, Evgeniya Sheremet, Michael Hietschold, Dietrich R.T. Zahn, Stefan E. Schulz, Thomas Gessner

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Carbon nanotube (CNT) based interconnects with different metal-CNT contacts were prepared and characterized. All investigated contact materials are compatible with the back-end-of-line processing. For interconnect applications the length of the metal-CNT contact interface has to be extremely short, and has to have a low contact resistance. In order to provide a reliable interface between the metal and the CNTs the applied metal should form stable carbides. Indeed, Ta and Ti are beneficial in terms of contact resistance for the top metallization with Ta even outperforming Ti. However, those materials are non-noble metals and hence can oxidize. Besides the metals Ta and Ti, also their metal nitrides were investigated as bottom metallization. They outperform the pure metals since TaN and TiN are more resistant towards oxidation during subsequent processing steps. However, an extremely thin Ta layer also proves beneficial since in this case the formation of a conductive TaC during the CNT growth process is feasible. Unfortunately, insufficiently controlled oxidation processes occur which impairs the reproducibility and hence causes the average via to have a higher resistance.

Original languageEnglish
Pages (from-to)130-134
Number of pages5
JournalMicroelectronic Engineering
Volume137
Issue number1
DOIs
Publication statusPublished - 1 Jan 2015
Externally publishedYes

Fingerprint

Carbon Nanotubes
electric contacts
Carbon nanotubes
Metals
carbon nanotubes
metals
contact resistance
Contact resistance
Metallizing
metal nitrides
oxidation
Oxidation
high resistance
carbides
Processing
Nitrides
Carbides
causes

Keywords

  • Atomic force microscopy
  • Carbon nanotube
  • Contact resistance
  • Interconnect
  • Raman spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Back-end-of-line compatible contact materials for carbon nanotube based interconnects. / Fiedler, Holger; Toader, Marius; Hermann, Sascha; Rennau, Michael; Rodriguez, Raul D.; Sheremet, Evgeniya; Hietschold, Michael; Zahn, Dietrich R.T.; Schulz, Stefan E.; Gessner, Thomas.

In: Microelectronic Engineering, Vol. 137, No. 1, 01.01.2015, p. 130-134.

Research output: Contribution to journalArticle

Fiedler, H, Toader, M, Hermann, S, Rennau, M, Rodriguez, RD, Sheremet, E, Hietschold, M, Zahn, DRT, Schulz, SE & Gessner, T 2015, 'Back-end-of-line compatible contact materials for carbon nanotube based interconnects', Microelectronic Engineering, vol. 137, no. 1, pp. 130-134. https://doi.org/10.1016/j.mee.2014.11.004
Fiedler, Holger ; Toader, Marius ; Hermann, Sascha ; Rennau, Michael ; Rodriguez, Raul D. ; Sheremet, Evgeniya ; Hietschold, Michael ; Zahn, Dietrich R.T. ; Schulz, Stefan E. ; Gessner, Thomas. / Back-end-of-line compatible contact materials for carbon nanotube based interconnects. In: Microelectronic Engineering. 2015 ; Vol. 137, No. 1. pp. 130-134.
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