TY - JOUR
T1 - Atomic layer deposition of nio to produce active material for thin-film lithium-ion batteries
AU - Koshtyal, Yury
AU - Nazarov, Denis
AU - Ezhov, Ilya
AU - Mitrofanov, Ilya
AU - Kim, Artem
AU - Rymyantsev, Aleksander
AU - Lyutakov, Oleksiy
AU - Popovich, Anatoly
AU - Maximov, Maxim
PY - 2019/5/1
Y1 - 2019/5/1
N2 - Atomic layer deposition (ALD) provides a promising route for depositing uniform thin-film electrodes for Li-ion batteries. In this work, bis(methylcyclopentadienyl) nickel(II) (Ni(MeCp) 2 ) and bis(cyclopentadienyl) nickel(II) (NiCp 2 ) were used as precursors for NiO ALD. Oxygen plasma was used as a counter-reactant. The films were studied by spectroscopic ellipsometry, scanning electron microscopy, atomic force microscopy, X-ray diffraction, X-ray reflectometry, and X-ray photoelectron spectroscopy. The results show that the optimal temperature for the deposition for NiCp 2 was 200-300 °C, but the optimal Ni(MeCp) 2 growth per ALD cycle was 0.011-0.012 nm for both precursors at 250-300 °C. The films deposited using NiCp 2 and oxygen plasma at 300 °C using optimal ALD condition consisted mainly of stoichiometric polycrystalline NiO with high density (6.6 g/cm 3 ) and low roughness (0.34 nm). However, the films contain carbon impurities. The NiO films (thickness 28-30 nm) deposited on stainless steel showed a specific capacity above 1300 mAh/g, which is significantly more than the theoretical capacity of bulk NiO (718 mAh/g) because it includes the capacity of the NiO film and the pseudo-capacity of the gel-like solid electrolyte interface film. The presence of pseudo-capacity and its increase during cycling is discussed based on a detailed analysis of cyclic voltammograms and charge-discharge curves (U(C)).
AB - Atomic layer deposition (ALD) provides a promising route for depositing uniform thin-film electrodes for Li-ion batteries. In this work, bis(methylcyclopentadienyl) nickel(II) (Ni(MeCp) 2 ) and bis(cyclopentadienyl) nickel(II) (NiCp 2 ) were used as precursors for NiO ALD. Oxygen plasma was used as a counter-reactant. The films were studied by spectroscopic ellipsometry, scanning electron microscopy, atomic force microscopy, X-ray diffraction, X-ray reflectometry, and X-ray photoelectron spectroscopy. The results show that the optimal temperature for the deposition for NiCp 2 was 200-300 °C, but the optimal Ni(MeCp) 2 growth per ALD cycle was 0.011-0.012 nm for both precursors at 250-300 °C. The films deposited using NiCp 2 and oxygen plasma at 300 °C using optimal ALD condition consisted mainly of stoichiometric polycrystalline NiO with high density (6.6 g/cm 3 ) and low roughness (0.34 nm). However, the films contain carbon impurities. The NiO films (thickness 28-30 nm) deposited on stainless steel showed a specific capacity above 1300 mAh/g, which is significantly more than the theoretical capacity of bulk NiO (718 mAh/g) because it includes the capacity of the NiO film and the pseudo-capacity of the gel-like solid electrolyte interface film. The presence of pseudo-capacity and its increase during cycling is discussed based on a detailed analysis of cyclic voltammograms and charge-discharge curves (U(C)).
KW - Atomic layer deposition
KW - Li-ion batteries
KW - Nickel oxide
KW - Thin films
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U2 - 10.3390/coatings9050301
DO - 10.3390/coatings9050301
M3 - Article
AN - SCOPUS:85065760144
VL - 9
JO - Coatings
JF - Coatings
SN - 2079-6412
IS - 5
M1 - 301
ER -