Application of thermoelectricity to IGBT for temperature regulation and energy harvesting

Yi Tian, Dejan Vasic, Stephane Lefebvre

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The internal junction temperature of an IGBT is the key element of confining life period of components. Meanwhile, during the IGBT works as a switch in a half bridge circuit, it usually arrives at a high temperature level about 150 °C to 175 °C, due to the accumulation of heat in the junction of IGBT. Thus, a large quantity of energy is lost in the form of heat. This paper focuses on the reduction of the internal junction temperature of the IGBT using a thermoelectric module (TEM), also known as thermoelectric generator (TEG), sitting between the IGBT component and heatsink. As an application of thermoelectric energy harvesting, this technique combines a cooling system equiped TEM for the IGBT and electrical energy harvesting. Moreover, for the optimal load, the maximum electrical harvest power arrives at 0.5 W. Finally, based on the experimental results on two comparable models, we could prove that the cooling system with the TEM reduces internal junction temperature of the IGBT by several degrees. Consequently, with this cooling system, the IGBT could work at a higher current and several electrical energy is harvested.

Original languageEnglish
Title of host publicationProceedings - 2012 IEEE International Symposium on Industrial Electronics, ISIE 2012
Pages211-216
Number of pages6
DOIs
Publication statusPublished - 15 Aug 2012
Externally publishedYes
Event21st IEEE International Symposium on Industrial Electronics, ISIE 2012 - Hangzhou, China
Duration: 28 May 201231 May 2012

Publication series

NameIEEE International Symposium on Industrial Electronics

Conference

Conference21st IEEE International Symposium on Industrial Electronics, ISIE 2012
CountryChina
CityHangzhou
Period28.5.1231.5.12

Fingerprint

Thermoelectricity
Energy harvesting
Insulated gate bipolar transistors (IGBT)
Cooling systems
Temperature
Bridge circuits
Switches

Keywords

  • cooling system
  • energy harvesting
  • reducing temperature
  • Thermoelectric module (TEM)
  • thermoelectricity

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering

Cite this

Tian, Y., Vasic, D., & Lefebvre, S. (2012). Application of thermoelectricity to IGBT for temperature regulation and energy harvesting. In Proceedings - 2012 IEEE International Symposium on Industrial Electronics, ISIE 2012 (pp. 211-216). [6237086] (IEEE International Symposium on Industrial Electronics). https://doi.org/10.1109/ISIE.2012.6237086

Application of thermoelectricity to IGBT for temperature regulation and energy harvesting. / Tian, Yi; Vasic, Dejan; Lefebvre, Stephane.

Proceedings - 2012 IEEE International Symposium on Industrial Electronics, ISIE 2012. 2012. p. 211-216 6237086 (IEEE International Symposium on Industrial Electronics).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tian, Y, Vasic, D & Lefebvre, S 2012, Application of thermoelectricity to IGBT for temperature regulation and energy harvesting. in Proceedings - 2012 IEEE International Symposium on Industrial Electronics, ISIE 2012., 6237086, IEEE International Symposium on Industrial Electronics, pp. 211-216, 21st IEEE International Symposium on Industrial Electronics, ISIE 2012, Hangzhou, China, 28.5.12. https://doi.org/10.1109/ISIE.2012.6237086
Tian Y, Vasic D, Lefebvre S. Application of thermoelectricity to IGBT for temperature regulation and energy harvesting. In Proceedings - 2012 IEEE International Symposium on Industrial Electronics, ISIE 2012. 2012. p. 211-216. 6237086. (IEEE International Symposium on Industrial Electronics). https://doi.org/10.1109/ISIE.2012.6237086
Tian, Yi ; Vasic, Dejan ; Lefebvre, Stephane. / Application of thermoelectricity to IGBT for temperature regulation and energy harvesting. Proceedings - 2012 IEEE International Symposium on Industrial Electronics, ISIE 2012. 2012. pp. 211-216 (IEEE International Symposium on Industrial Electronics).
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