Application of high-frequency short-pulsed plasma-immersion ion implantation or deposition method for dielectric materials processing using gas, metal and gas-metal plasma

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new approach in the development of advanced coating deposition and ion implantation method including an application of filtered dc metal plasma and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10%-99% are considered. The ion energy spectrum for different negative bias potential pulse duration (120-1100) ns was measured. The map of different methods of ion beam and plasma material treatment using high-frequency short pulse metal plasma immersion ion implantation or deposition depending on bias pulse duty factor and amplitude for Cu plasma is presented. The ion assisted coating deposition depending on samples conductivity and thickness, plasma concentration, pulse repetition rate and amplitude and duty factor has been examined.

Original languageEnglish
Title of host publicationProceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012
DOIs
Publication statusPublished - 2012
Event2012 7th International Forum on Strategic Technology, IFOST 2012 - Tomsk, Russian Federation
Duration: 18 Sep 201221 Sep 2012

Other

Other2012 7th International Forum on Strategic Technology, IFOST 2012
CountryRussian Federation
CityTomsk
Period18.9.1221.9.12

Keywords

  • high-frequency short pulse plasma immersion ion implantation
  • ion-assisted coating deposition
  • vacuum arc

ASJC Scopus subject areas

  • Management of Technology and Innovation

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